TMD 2D (French Wikipedia)

Analysis of information sources in references of the Wikipedia article "TMD 2D" in French language version.

Last modified:

Ref.Un. Ref.Website
Global rank French rank
2nd place
3rd place
14th place
54th place
5th place
11th place
15th place
155th place
49th place
128th place
207th place
147th place
1,264th place
1,143rd place
865th place
633rd place
1,046th place
688th place
150th place
129th place
2,104th place
1,812th place
66th place
547th place
2,273rd place
2,726th place
1,383rd place
1,614th place
1,007th place
879th place
1,411th place
525th place
2,959th place
1,791st place

acs.org (Global: 865th place; French: 633rd place)

pubs.acs.org

adsabs.harvard.edu (Global: 14th place; French: 54th place)

ui.adsabs.harvard.edu

aip.org (Global: 2,273rd place; French: 2,726th place)

pubs.aip.org

annualreviews.org (Global: 2,959th place; French: 1,791st place)

aps.org (Global: 1,264th place; French: 1,143rd place)

journals.aps.org

arxiv.org (Global: 49th place; French: 128th place)

core.ac.uk (Global: 1,383rd place; French: 1,614th place)

doi.org (Global: 2nd place; French: 3rd place)

dx.doi.org

hdl.handle.net (Global: 66th place; French: 547th place)

iop.org (Global: 1,046th place; French: 688th place)

iopscience.iop.org

nature.com (Global: 207th place; French: 147th place)

nih.gov (Global: 5th place; French: 11th place)

ncbi.nlm.nih.gov

pnas.org (Global: 1,411th place; French: 525th place)

rsc.org (Global: 2,104th place; French: 1,812th place)

pubs.rsc.org

  • (en) Ali Eftekhari, « Tungsten dichalcogenides (WS2, WSe2, and WTe2): materials chemistry and applications », Journal of Materials Chemistry A, vol. 5, no 35, , p. 18299-18325 (DOI 10.1039/c7ta04268j, lire en ligne).
  • (en) Yumeng Shi, Henan Li et Lain-Jong Li, « Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques », Chemical Society Reviews, vol. 44, no 9, , p. 2744-2756 (PMID 25327436, DOI 10.1039/c4cs00256c, lire en ligne).
  • (en) Deependra Kumar Singh et Govind Gupta, « van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward », Materials Advances, vol. 3, no 15, , p. 6142-6156 (DOI 10.1039/D2MA00352J, S2CID 250156491, lire en ligne).

science.org (Global: 1,007th place; French: 879th place)

  • (en) Jonathan N. Coleman , Mustafa Lotya, Arlene O’Neill, Shane D. Bergin, Paul J. King, Umar Khan, Karen Young, Alexandre Gaucher, Sukanta De, Ronan J. Smith, Igor V. Shvets, Sunil K. Arora, George Stanton, Hye-Young Kim, Kangho Lee, Gyu Tae Kim, Georg S. Duesberg, Toby Hallam, John J. Boland, Jing Jing Wang, John F. Donegan, Jaime C. Grunlan, Gregory Moriarty, Aleksey Shmeliov, Rebecca J. Nicholls, James M. Perkins, Eleanor M. Grieveson, Koenraad Theuwissen, David W. McComb, Peter D. Nellist et Valeria Nicolosi, « Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials », Science, vol. 331, no 6017, , p. 568-571 (PMID 21292974, DOI 10.1126/science.1194975, Bibcode 2011Sci...331..568C, hdl 2262/66458, S2CID 23576676, lire en ligne).
  • (en) Changgu Lee, Xiaoding Wei, Jeffrey W. Kysar et James Hone, « Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene », Science, vol. 321, no 5887, , p. 385-388 (PMID 18635798, DOI 10.1126/science.1157996, Bibcode 2008Sci...321..385L, S2CID 206512830, lire en ligne).

semanticscholar.org (Global: 15th place; French: 155th place)

api.semanticscholar.org

wiley.com (Global: 150th place; French: 129th place)

onlinelibrary.wiley.com

  • (en) Se-Yang Kim, Jinsung Kwak, Cristian V. Ciobanu, Soon-Yong Kwon, « Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides », Advanced Materials, vol. 31, no 20, , article no 1804939 (PMID 30706541, DOI 10.1002/adma.201804939, Bibcode 2019AdM....3104939K, lire en ligne).
  • (en) Yi-Hsien Lee, Xin-Quan Zhang, Wenjing Zhang, Mu-Tung Chang, Cheng-Te Lin, Kai-Di Chang, Ya-Chu Yu, Jacob Tse-Wei Wang, Chia-Seng Chang, Lain-Jong Li et Tsung-Wu Lin, « Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition », Advanced Materials, vol. 24, no 17, , p. 2320-2325 (PMID 22467187, DOI 10.1002/adma.201104798, Bibcode 2012AdM....24.2320L, arXiv 1202.5458, S2CID 11713759, lire en ligne).
  • (en) Xi Wan, Kun Chen, Zefeng Chen, Fangyan Xie, Xiaoliang Zeng, Weiguang Xie, Jian Chen et Jianbin Xu, « Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors », Advanced Functional Materials, vol. 27, no 19, , article no 1603998 (DOI 10.1002/adfm.201603998, S2CID 100120486, lire en ligne).
  • (en) Nema M. Abdelazim, Yasir J. Noori, Shibin Thomas, Victoria K. Greenacre, Yisong Han, Danielle E. Smith, Giacomo Piana, Nikolay Zhelev, Andrew L. Hector, Richard Beanland, Gillian Reid, Philip N. Bartlett et Cornelis H. de Groot, « Lateral Growth of MoS2 2D Material Semiconductors Over an Insulator Via Electrodeposition », Advanced Electronic Materials, vol. 7, no 9, , article no 2100419 (DOI 10.1002/aelm.202100419, S2CID 232478824, lire en ligne Accès libre).
  • (en) Andres Castellanos-Gomez, Menno Poot, Gary A. Steele, Herre S. J. van der Zant, Nicolás Agraït et Gabino Rubio-Bollinger, « Elastic Properties of Freely Suspended MoS2 Nanosheets », Advanced Materials, vol. 24, no 6, , p. 772-775 (PMID 22231284, DOI 10.1002/adma.201103965, Bibcode 2012AdM....24..772C, arXiv 1202.4439, S2CID 205243099, lire en ligne).