6G (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "6G" in Hebrew language version.

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arxiv.org

atis.org

bbc.com

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cnn.com

edition.cnn.com

digitaltrends.com

doi.org

doi.org

  • Romanczyk, Brian; Zheng, Xun; Guidry, Matthew; Li, Haoran; Hatui, Nirupam; Wurm, Christian; Krishna, Athith; Ahmadi, Elaheh; Keller, Stacia (במרץ 2020). "W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs". IEEE Electron Device Letters. pp. 349–352. doi:10.1109/LED.2020.2967034. ISSN 1558-0563. {{cite web}}: (עזרה)
  • "High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz - IEEE Journals & Magazine" (באנגלית אמריקאית). doi:10.1109/LED.2020.2980841. נבדק ב-2020-10-15.
  • Wedage, Lasantha Thakshila; Butler, Bernard; Balasubramaniam, Sasitharan; Koucheryavy, Yevgeni; Jornet, Josep M. (2021-10-06), Climate Change Sensing through Terahertz Communications: A Disruptive Application of 6G Networks, doi:10.48550/arXiv.2110.03074, נבדק ב-2025-04-18
  • Wedage, Lasantha Thakshila; Butler, Bernard; Balasubramaniam, Sasitharan; Koucheryavy, Yevgeni; Jornet, Josep M. (2021-10-06), Climate Change Sensing through Terahertz Communications: A Disruptive Application of 6G Networks, doi:10.48550/arXiv.2110.03074, נבדק ב-2025-04-18

dx.doi.org

ieee.org

ieeexplore.ieee.org

  • Romanczyk, Brian; Zheng, Xun; Guidry, Matthew; Li, Haoran; Hatui, Nirupam; Wurm, Christian; Krishna, Athith; Ahmadi, Elaheh; Keller, Stacia (במרץ 2020). "W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs". IEEE Electron Device Letters. pp. 349–352. doi:10.1109/LED.2020.2967034. ISSN 1558-0563. {{cite web}}: (עזרה)
  • "High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz - IEEE Journals & Magazine" (באנגלית אמריקאית). doi:10.1109/LED.2020.2980841. נבדק ב-2020-10-15.
  • Fan Liu, Yuanhao Cui, Christos Masouros, Jie Xu, Tony Xiao Han, Yonina C. Eldar, Stefano Buzzi, Integrated Sensing and Communications: Toward Dual-Functional Wireless Networks for 6G and Beyond, IEEE Journal on Selected Areas in Communications 40, 2022-06, עמ' 1728–1767 doi: 10.1109/JSAC.2022.3156632

lifewire.com

qz.com

sciencedirect.com

scmp.com

worldcat.org

  • Romanczyk, Brian; Zheng, Xun; Guidry, Matthew; Li, Haoran; Hatui, Nirupam; Wurm, Christian; Krishna, Athith; Ahmadi, Elaheh; Keller, Stacia (במרץ 2020). "W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs". IEEE Electron Device Letters. pp. 349–352. doi:10.1109/LED.2020.2967034. ISSN 1558-0563. {{cite web}}: (עזרה)