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אינדיום גליום ניטריד (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "אינדיום גליום ניטריד" in Hebrew language version.

refsWebsite
Global rank Hebrew rank
19doi.org
2nd place
10th place
10harvard.edu
18th place
109th place
2arxiv.org
69th place
238th place
1dtic.mil
833rd place
1,252nd place
1vcu.edu
7,721st place
low place
1mtu.edu
9,412th place
9,120th place
1lbl.gov
2,509th place
1,571st place
1nih.gov
4th place
18th place
1queensu.ca
6,111th place
7,466th place
1kurzweilai.net
low place
low place
1zenodo.org
621st place
2,868th place

arxiv.org

doi.org

  • Linti, G. "The Group 13 Metals Aluminium, Gallium, Indium and Thallium. Chemical Patterns and Peculiarities. Edited by Simon Aldridge and Anthony J. Downs.Angew. Chem". Angewandte Chemie International Edition. 50: 11569. doi:10.1002/anie.201105633.
  • V. Kachkanov; K.P. O’Donnell; S. Pereira; R.W. Martin (2007). "Localization of excitation in InGaN epilayers". Phil. Mag. 87 (13): 1999–2017. doi:10.1080/14786430701342164.
  • A. Reale1, A. Di Carlo, A. Vinattieri, M. Colocci, F. Rossi, N. Armani, C. Ferrari, G. Salviati, L. Lazzarini, V. Grillo (2005). "Investigation of the recombination dynamics in low In-content InGaN MQWs by means of cathodoluminescence and photoluminescence excitation". Physica Status Solidi C. 2 (2): 817–821. Bibcode:2005PSSCR...2..817R. doi:10.1002/pssc.200460305.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
  • Rak Jun Choi, Hyung Jae Lee, Yoon-bong Hahn, Hyung Koun Cho (2004). "Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities". Korean Journal of Chemical Engineering. 21: 292–295. doi:10.1007/BF02705411.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
  • Liang-Yi Chen; Ying-Yuan Huang; Chun-Hsiang Chang; Yu-Hsuan Sun; Yun-Wei Cheng; Min-Yung Ke; Cheng-Pin Chen; JianJang Huang (2010). "High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes". Optics Express. 18 (8): 7664. Bibcode:2010OExpr..18.7664C. doi:10.1364/OE.18.007664.
  • C Skierbiszewski1,2, P Perlin1,2, I Grzegory, Z R Wasilewski, M Siekacz, A Feduniewicz, P Wisniewski, J Borysiuk, P Prystawko, G Kamler, T Suski and S Porowski (2005). "High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy". Semiconductor Science and Technology. 20 (8): 809–813. Bibcode:2005SeScT..20..809S. doi:10.1088/0268-1242/20/8/030.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
  • F. Sacconi, M. Auf der Maur, A. Pecchia, M. Lopez, A. Di Carlo. "Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs" (2012). "Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs". Physica Status Solidi C. 9 (5): 1315–1319. Bibcode:2012PSSCR...9.1315S. doi:10.1002/pssc.201100205.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
  • M. Lopez, F. Sacconi, M. Auf der Maur, A. Pecchia, A. Di Carlo. "Atomistic simulation of InGaN/GaN quantum disk LEDs" (2012). "Atomistic simulation of InGaN/GaN quantum disk LEDs". Optical and Quantum Electronics. 44 (3): 89–94. doi:10.1007/s11082-012-9554-3.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
  • M. Auf der Maur, K. Lorenz and A. Di Carlo. "Band gap engineering approaches to increase InGaN/GaN LED efficiency" (2012). "Band gap engineering approaches to increase InGaN/GaN LED efficiency". Physica Status Solidi C. 44 (3–5): 83–88. doi:10.1007/s11082-011-9536-x.
  • McLaughlin, D.V.P.; Pearce, J.M. (2013). "Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion". Metallurgical and Materials Transactions A. 44 (4): 1947–1954. Bibcode:2013MMTA...44.1947M. doi:10.1007/s11661-013-1622-1.
  • Bhuiyan, A.; Sugita, K.; Hashimoto, A.; Yamamoto, A. (2012). "InGaN Solar Cells: Present State of the Art and Important Challenges". IEEE Journal of Photovoltaics. 2 (3): 276–293. doi:10.1109/JPHOTOV.2012.2193384.
  • Zeng, S. W.; et al. (2009). "Substantial photo-response of InGaN p–i–n homojunction solar cells". Semicond. Sci. Technol. 24 (5): 055009. Bibcode:2009SeScT..24e5009Z. doi:10.1088/0268-1242/24/5/055009.
  • Sun, X.; et al. (2008). "Photoelectric characteristics of metal/InGaN/GaN heterojunction structure". J. Phys. D. 41 (16): 165108. Bibcode:2008JPhD...41p5108S. doi:10.1088/0022-3727/41/16/165108.
  • Dirk V. P. McLaughlin; J.M. Pearce (2012). "Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells". Materials Science and Engineering: B. 177 (2): 239–244. arXiv:1201.2911. doi:10.1016/j.mseb.2011.12.008.
  • Cao, L.; White, J. S.; Park, J. S.; Schuller, J. A.; Clemens, B. M.; Brongersma, M. L. (2009). "Engineering light absorption in semiconductor nanowire devices". Nature Materials. 8 (8): 643–647. Bibcode:2009NatMa...8..643C. doi:10.1038/nmat2477. PMID 19578337.
  • S. Keating; M.G. Urquhart; D.V.P. McLaughlin; J.M. Pearce (2011). "Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth". Crystal Growth & Design. 11 (2): 565–568. arXiv:1203.0645. doi:10.1021/cg101450n.
  • Cherns, D.; Webster, R. F.; Novikov, S. V.; Foxon, C. T.; Fischer, A. M.; Ponce, F. A.; Haigh, S. J. (2014). "Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy". Nanotechnology. 25 (21): 215705. doi:10.1088/0957-4484/25/21/215705free{{cite journal}}: תחזוקה - ציטוט: postscript (link)
  • Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A. (2013). "Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation". Applied Physics Letters. 103 (13): 131101. Bibcode:2013ApPhL.103m1101F. doi:10.1063/1.4822122.
  • D V Shenai-Khatkhate; R Goyette; R L DiCarlo; G Dripps (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 1–4 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

dtic.mil

handle.dtic.mil

harvard.edu

ui.adsabs.harvard.edu

kurzweilai.net

lbl.gov

mtu.edu

digitalcommons.mtu.edu

nih.gov

pubmed.ncbi.nlm.nih.gov

queensu.ca

qspace.library.queensu.ca

vcu.edu

morkoc.vcu.edu

zenodo.org