אפיטקסיה (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "אפיטקסיה" in Hebrew language version.

refsWebsite

Global rank Hebrew rank

6sciencedirect.com

149^th place

87^th place

2doi.org

2^nd place

10^th place

2jstor.org

26^th place

59^th place

1mdpi.com

2,912^th place

1,457^th place

1tandfonline.com

507^th place

244^th place

1springer.com

274^th place

120^th place

1academia.edu

121^st place

104^th place

1cambridge.org

305^th place

182^nd place

1degruyter.com

1,425^th place

510^th place

1aps.org

1,503^rd place

620^th place

1iaea.org

1,168^th place

2,402^nd place

1angel.digital

low place

1weizmann.ac.il

4,983^rd place

43^rd place

1acs.org

1,248^th place

873^rd place

1icap.org.il

low place

1technion.ac.il

low place

302^nd place

1lusix.com

low place

1scd.co.il

low place

academia.edu (Global: 121^st place; Hebrew: 104^th place)

T.S. Low et al., The role of substrate dislocations in causing infant failures in high complexity InGaP/GaAs HBT ICs, CS MANTECH Conference May 14-17, 2007, עמ' 43

acs.org (Global: 1,248^th place; Hebrew: 873^rd place)

pubs.acs.org

A. Cohen et al., Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire, ACS Nano 17, 2023, עמ' 5399–5411

angel.digital (Global: low place; Hebrew: low place)

magazines.angel.digital

P. Malinowski, K. Minoglou and P. De Moor, Extreme ultraviolet imaging with hybrid AlGaN arrays, Compound Semiconductors 17 (1), 2011, עמ' 29-32

aps.org (Global: 1,503^rd place; Hebrew: 620^th place)

journals.aps.org

István Daruka and Albert-László Barabási, Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium, PHYSICAL REVIEW LETTERS 79, 1997, עמ' 3708

cambridge.org (Global: 305^th place; Hebrew: 182^nd place)

Christopher J.K. Richardson and Minjoo Larry Lee, Metamorphic epitaxial materials, MRS Bulletin 14 March, 2016, עמ' 193

degruyter.com (Global: 1,425^th place; Hebrew: 510^th place)

M. Volmer and A. Weber, Keimbildung in übersättigten Gebilden, Zeitschrift für Physikalische Chemie 119, 1926, עמ' 277

doi.org (Global: 2^nd place; Hebrew: 10^th place)

Arto Aho et al., Wide spectral coverage (0.7–2.2 eV) lattice-matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials, Progress in Photovoltaics: Research and Applications 29 (7), 2021, עמ' 655-884
A. K. Mallik, Microwave Plasma CVD Grown Single Crystal Diamonds - A Review, Journal of Coating Science and Technology 3 (2), 2016, עמ' 75-99

iaea.org (Global: 1,168^th place; Hebrew: 2,402^nd place)

inis.iaea.org

Morten Jagd Christense, Epitaxy, Thin Films and Superlattices, International Nuclear Information System (INIS), ‏May 1997

icap.org.il (Global: low place; Hebrew: low place)

Israel Center for Advanced Photonics, ‏Retrieved on September 22, 2023

jstor.org (Global: 26^th place; Hebrew: 59^th place)

F. C. Frank and J. H. van der Merwe, One-Dimensional Dislocations. II. Misfitting Monolayers and Oriented Overgrowth, Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences 1053, 1949, עמ' 216-225
W. K. Burton, N. Cabrera, and F. C. Frank, The Growth of Crystals and the Equilibrium Structure of their Surfaces, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences 243, 1951, עמ' 299-358

lusix.com (Global: low place; Hebrew: low place)

LUSIX – The industry choice for lab-grown diamonds., ‏Retrieved on September 22, 2023

mdpi.com (Global: 2,912^th place; Hebrew: 1,457^th place)

Robert Czernecki, Materials: Special Issue "Epitaxial Growth of Semiconductor Materials", mdpi, ‏Retrieved on September 5, 2023

scd.co.il (Global: low place; Hebrew: low place)

SCD Core Technologies, ‏Retrieved on September 22, 2023

sciencedirect.com (Global: 149^th place; Hebrew: 87^th place)

E. Bauer and H. Poppa, Recent advances in epitaxy, Thin Solid Films 12, 1972, עמ' 167-185
Makoto Kasu, Diamond epitaxy: Basics and applications, Progress in Crystal Growth and Characterization of Materials 62 (2), 2016, עמ' 317-328
M. Horita, M. Suzuki, and Y. Matsushima, MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio, Journal of crystal growth 124, 1992, עמ' 123-128
T. Suntola, Atomic layer epitaxy, Materials Science Reports 4, 1989, עמ' 261-312
P.R. Hageman et al., Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy, Journal of Crystal Growth 255, 2003, עמ' 241–249
E. Varadarajan et al., On the chloride vapor-phase epitaxy growth of GaN and its characterization, Journal of Crystal Growth 260, 2004, עמ' 43–49

springer.com (Global: 274^th place; Hebrew: 120^th place)

link.springer.com

M. Reddy et al., Demonstration of High-Quality MBE HgCdTe on 8-Inch Wafers, Journal of Electronic Materials 48 (10), 2019, עמ' 6040–6044

tandfonline.com (Global: 507^th place; Hebrew: 244^th place)

John Rakovan, Epitaxy, Rocks & Minerals 81 (4), 2006, עמ' 317-320

technion.ac.il (Global: low place; Hebrew: 302^nd place)

oxides.net.technion.ac.il

L. Kornblum, Oxide Electronics Lab, ‏Retrieved on September 22, 2023

weizmann.ac.il (Global: 4,983^rd place; Hebrew: 43^rd place)

V.Y. Umansky, Weizmann Institute of Science, Department of Condensed Matter Physics - Molecular Beam Epitaxy for high mobility semiconductors, ‏September 22, 2023

אפיטקסיה (Hebrew Wikipedia)

academia.edu (Global: 121st place; Hebrew: 104th place)

acs.org (Global: 1,248th place; Hebrew: 873rd place)

pubs.acs.org

angel.digital (Global: low place; Hebrew: low place)

magazines.angel.digital

aps.org (Global: 1,503rd place; Hebrew: 620th place)

journals.aps.org

cambridge.org (Global: 305th place; Hebrew: 182nd place)

degruyter.com (Global: 1,425th place; Hebrew: 510th place)

doi.org (Global: 2nd place; Hebrew: 10th place)

iaea.org (Global: 1,168th place; Hebrew: 2,402nd place)

inis.iaea.org

icap.org.il (Global: low place; Hebrew: low place)

jstor.org (Global: 26th place; Hebrew: 59th place)

lusix.com (Global: low place; Hebrew: low place)

mdpi.com (Global: 2,912th place; Hebrew: 1,457th place)

scd.co.il (Global: low place; Hebrew: low place)

sciencedirect.com (Global: 149th place; Hebrew: 87th place)

springer.com (Global: 274th place; Hebrew: 120th place)

link.springer.com

tandfonline.com (Global: 507th place; Hebrew: 244th place)

technion.ac.il (Global: low place; Hebrew: 302nd place)

oxides.net.technion.ac.il

weizmann.ac.il (Global: 4,983rd place; Hebrew: 43rd place)

academia.edu (Global: 121^st place; Hebrew: 104^th place)

acs.org (Global: 1,248^th place; Hebrew: 873^rd place)

aps.org (Global: 1,503^rd place; Hebrew: 620^th place)

cambridge.org (Global: 305^th place; Hebrew: 182^nd place)

degruyter.com (Global: 1,425^th place; Hebrew: 510^th place)

doi.org (Global: 2^nd place; Hebrew: 10^th place)

iaea.org (Global: 1,168^th place; Hebrew: 2,402^nd place)

jstor.org (Global: 26^th place; Hebrew: 59^th place)

mdpi.com (Global: 2,912^th place; Hebrew: 1,457^th place)

sciencedirect.com (Global: 149^th place; Hebrew: 87^th place)

springer.com (Global: 274^th place; Hebrew: 120^th place)

tandfonline.com (Global: 507^th place; Hebrew: 244^th place)

technion.ac.il (Global: low place; Hebrew: 302^nd place)

weizmann.ac.il (Global: 4,983^rd place; Hebrew: 43^rd place)