אפיטקסיה מפאזת אדים אורגנומתכתיים (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "אפיטקסיה מפאזת אדים אורגנומתכתיים" in Hebrew language version.

refsWebsite

Global rank Hebrew rank

18sciencedirect.com

149^th place

87^th place

5iop.org

1,725^th place

747^th place

4aip.org

2,204^th place

2,679^th place

1nature.com

234^th place

92^nd place

1springer.com

274^th place

120^th place

1lightreading.com

low place

1acs.org

1,248^th place

873^rd place

1icap.org.il

low place

acs.org (Global: 1,248^th place; Hebrew: 873^rd place)

pubs.acs.org

A. Cohen et al., Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire, ACS Nano 17, 2023, עמ' 5399–5411

aip.org (Global: 2,204^th place; Hebrew: 2,679^th place)

pubs.aip.org

H.M. Manasevit, Single-Crystal Gallium Arsenide on Insulating Substrates, Joournal of Applied Physics 12/4, 1968, עמ' 156
D. Fekete, Uniformity of an embedded stripe large optical‐cavity GaAs/GaAlAs double‐heterostructure laser grown by metallo‐organic chemical vapor deposition, Journal of Applied Physics 59, 1986, עמ' 1028–1030
G. Cinader, A. Raizman, and A. Sher, The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxy, Journal Science & Technology B 9, 1991, עמ' 1634-1638
Y. Paltiel et al., Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current, Applied Physics Letters 84, 2004, עמ' 5419-5421

icap.org.il (Global: low place; Hebrew: low place)

Israel Center for Advanced Photonics, ‏Retrieved on September 22, 2023

iop.org (Global: 1,725^th place; Hebrew: 747^th place)

iopscience.iop.org

H. M. Manasevit and W. I. Simpson, [https://iopscience.iop.org/article/10.1149/1.2411685 The Use of Metal‐Organics in the Preparation of Semiconductor Materials: I. Epitaxial Gallium‐V Compounds], Journal of The Electrochemical Society 116/12, 1968, עמ' 1725
M. Manasevit and W. I. Simpson, [https://iopscience.iop.org/article/10.1149/1.2408130 The Use of Metal‐Organics in the Preparation of Semiconductor Materials: II. II – VI Compounds], Journal of The Electrochemical Society 118/4, 1971, עמ' 644
H.M. Manasevit, The Use of Metal‐Organics in the Preparation of Semiconductor Materials: III. Studies of Epitaxial III ‐ V Aluminum Compound Formation Using Trimethylaluminum, Journal of The Electrochemical Society 118/4, 1971, עמ' 647
H. M. Manasevit, F. M. Erdmann and W. I. Simpson, The Use of Metalorganics in the Preparation of Semiconductor Materials: IV. The Nitrides of Aluminum and Gallium, Journal of The Electrochemical Society 118/11, 1971, עמ' 1864
A. Horn et al., Surface states and persistent photocurrent in a GaN heterostructure field effect transistor, Semiconductor Science and Technology 21, 2006, עמ' 933–937

lightreading.com (Global: low place; Hebrew: low place)

CyOptics Opens InP Plant, Light Reading, ‏February 4, 2002

nature.com (Global: 234^th place; Hebrew: 92^nd place)

S. Pimputkar et al., Prospects for LED lighting, Nature Photonics 3, 2009, עמ' 180

sciencedirect.com (Global: 149^th place; Hebrew: 87^th place)

R. Didchenko, J.E. Alix, and R.H. Toeniskoetter, Reactions of phosphine with trimethylindium, Journal of Inorganic and Nuclear Chemistry 14, 1960, עמ' 35-37
P.D. Dapkus,, High purity GaAs prepared from trimethylgallium and arsine, Journal of Crystal Growth 55/1, 1981, עמ' 10
J.P. DUCHEMIN et al., GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications, Journal of Crystal Growth 55/1, 1981, עמ' 64
A. Aardvark, N. J. Mason and P. J. Walker, THE GROWTH OF ANTIMONIDES BY MOVPE, Progress in Crystal Growth and Characterization 135/2-4, 1997, עמ' 207
J.B. Mullin, S.J.C. Irvine, and D.J. Ashen, Organometallic growth of II–VI compounds, Journal of Crystal Growth 55/1, 1981, עמ' 92
A. Raizman, A. Sher, and G. Cinader, X-ray measurements of strains in MOCVD grown thin cap layers of CdTe, Journal of Crystal Growth 159, 1996, עמ' 126-129
S. Shusterman et al., High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE, Journal of Crystal Growth 291, 2006, עמ' 363-369
D.C. Elias et al., Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD, Infrared Physics & Technology 95, 2018, עמ' 199-202
M. Horita, M. Suzuki, and Y. Matsushima, MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio, Journal of crystal growth 124, 1992, עמ' 123-128
S.J. BASS, Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique, Journal of Crystal Growth 31, 1975, עמ' 172
P.M. Frijlink, J.L. Nicolas and P. Suchet, Layer uniformity in a multiwafer MOVPE reactor for 111—V compounds, Journal of Crystal Growth 107, 1991, עמ' 166
P.M. Frijlink et al., The radial flow planetary reactor: low pressure versus atmospheric pressure MOVPE, Journal of Crystal Growth 115, 1991, עמ' 203
T. Bergunde et al., Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies, Journal of Crystal Growth 170, 1997, עמ' 66
X. Zhang et al., Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor, Journal of Crystal Growth 170, 1997, עמ' 83
A.G. Thompson et al., Large scale manufacturing of compound semiconductors by MOVPE, Journal of Crystal Growth 170, 1997, עמ' 92
W.G. Breiland et al., Organometallic vapor phase epitaxy (OMVPE), Materials Science and Engineering R: Reports R24/6, 1999, עמ' 241
B. Mitrovic et al., Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors, Journal of Crystal Growth 289/2, 2006, עמ' 708
J.-P. Duchemin, Low-Pressure MOVPE: The time of the pioneers, Journal of Crystal Growth 601, 2023, עמ' 126939

springer.com (Global: 274^th place; Hebrew: 120^th place)

link.springer.com

Y. Nemirovsky et al., The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe, Journal of Electronic Materials 24, 1995, עמ' 1161–1168

אפיטקסיה מפאזת אדים אורגנומתכתיים (Hebrew Wikipedia)

acs.org (Global: 1,248th place; Hebrew: 873rd place)