אפיטקסיית קרן מולקולרית (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "אפיטקסיית קרן מולקולרית" in Hebrew language version.

refsWebsite

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16aip.org

2,204^th place

2,679^th place

8sciencedirect.com

149^th place

87^th place

2springer.com

274^th place

120^th place

2iop.org

1,725^th place

747^th place

1archive.org

6^th place

48^th place

1silverchair.com

low place

1degruyter.com

1,425^th place

510^th place

1ieee.org

652^nd place

820^th place

1weizmann.ac.il

4,983^rd place

43^rd place

1tau.ac.il

4,464^th place

79^th place

1technion.ac.il

low place

302^nd place

1isorad.co.il

low place

1scd.co.il

low place

1compoundsemiconductor.net

low place

aip.org

pubs.aip.org

J. H. Neave, P. J. Dobson, B. A. Joyce and J. Zhang, Reflection high‐energy electron diffraction oscillations from vicinal surfaces – a new approach to surface diffusion measurements, Appl. Phys. Lett. 47/2, 1985, עמ' 100-102
J. E. Davey and T. Pankey, Structural and Optical Characteristics of Thin GaAs Films, Journal of Applied Physics 35/4, 1964, עמ' 2203–2209
J. R. Arthur and J. J. LePore, GaAs, GaP, and GaAs_xP_1-x Epitaxial Films Grown by Molecular Beam Deposition, Journal of Applied Physics 6/4, 1969, עמ' 545-548
J. R. Arthur, Interaction of Ga and As₂ Molecular Beams with GaAs Surfaces, Journal of Applied Physics 39/8, 1968, עמ' 4032-4034
A. Y. Cho, Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures, Journal of Applied Physics 41/7, 1970, עמ' 2780-2786
A. Y. Cho, GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face, journal of Applied Physics 42/5, 1971, עמ' 2074–2081
A. Y. Cho, Film Deposition by Molecular-Beam Techniques, Journal of Vacuum Science & Technology 8/5, 1971, עמ' S31–S38
A. Y. Cho, Growth of Periodic Structures by the Molecular‐Beam Method, Applied Physics Letters 19/11, 1971, עמ' 467–468
L. L. Chang, L. Esaki, W. E. Howard, and R. Ludeke, The Growth of a GaAs–GaAlAs Superlattice, Journal of Vacuum Science & Technology 10/1, 1973, עמ' 11-16
L. L. Chang, L. Esaki, W. E. Howard, R. Ludeke, and G. Schul, Structures Grown by Molecular Beam Epitaxy, Journal of Vacuum Science & Technology 10/5, 1973, עמ' 655–662
A. Y. Cho and I. Hayashi, P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs, Journal of Applied Physics 42/11, 1971, עמ' 4422–4425
M. Ilegems, Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and Al_xGa_1−xAs, Journal of Applied Physics 48/3, 1977, עמ' 1278–1287
A. Y. Cho and H.C. Casey, Jr., GaAs–Al_xGa_1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy, Applied Physics Letters 25/5, 1974, עמ' 288–290
A. Y. Cho, R. W. Dixon, and H. C. Casey, Jr., Continuous room‐temperature operation of GaAs‐Al_xGa_1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy, Applied Physics Letters 28/9, 1976, עמ' 501–503
W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Very low current threshold GaAs‐Al_xGa_1−xAs double‐heterostructure lasers grown by molecular beam epitaxy, Applied Physics Letters 36/1, 1980, עמ' 11-14
W. T. Tsang, A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam, Applied Physics Letters 39/2, 1981, עמ' 134-137

archive.org

A. Cho, M.B. Panish, and I. Hayashi, Molecular beam epitaxy of GaAs, Al_xGa_1-xAs and GaP, Proceedings of the Third International Symposium on GaAs and Related Compounds, 1970, עמ' 18-29

compoundsemiconductor.net

SCD expands capacity with Veeco MBE system, Compound Semiconductor, ‏May 12, 2016

degruyter.com

K. G. Günther, Aufdampfschichten aus halbleitenden Ill-V-Verbindungen, Zeitschrift für Naturforschung A 13/12, 1958, עמ' 1081-1089 (בגרמנית)

ieee.org

ieeexplore.ieee.org

L. Esaki and R. Tsu, Superlattice and Negative Differential Conductivity in Semiconductors, IBM Journal of Research and Development 14/1, 1970, עמ' 61-65

iop.org

iopscience.iop.org

H. Sakaki, M. Tanaka, and J. Yoshino, One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy, Japanese Journal of Applied Physics 24/6, 1985, עמ' L417-L420
J. J. Coleman, The development of the semiconductor laser diode after the first demonstration in 1962, Semiconductor Science and Technology 27/9, 2012, עמ' 090207

isorad.co.il

[Israel Center for Advanced Photonics (ICAP) https://isorad.co.il/photonic/], Last retrieved on March 9, 2024

scd.co.il

SCD Core Technologies, Last retrieved on March 9, 2024

sciencedirect.com

B. A. Joyce, Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs, Journal of crystal growth 3-4, 1968, עמ' 43-59
J. H. Neave and B. A. Joyce, Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy, Journal of Crystal Growth 44/4, 1978, עמ' 387—397
J.J. Harris, B A. Joyce, and P.J. Dobson, Oscillations in the surface structure of Sn-doped GaAs during growth by MBE, Surface Science 103/1, 1981, עמ' L90-L96
C. E.C. Wood, RED intensity oscillations during MBE of GaAs, Surface Science 108/2, 1981, עמ' L441-L443
A. Y. Cho and J. R. Arthur, Molecular beam epitaxy, Progress in Solid State Chemistry 10/3, 1975, עמ' 157-191
Haruo Tanaka and Masato Mushiage, MBE as a production technology for A1GaAs lasers, Journal of Crystal Growth 111, 1991, עמ' 1043-1046
V. Umansky, M. Heiblum, Y. Levinson, J. Smet, J. Nuebler, and M. Dolev, MBE growth of ultra-low disorder 2DEG with mobility exceeding 35 x 10⁶ cm²/V s, Journal of Crystal Growth 311, 2009, עמ' 1658–1661
Olga Klin et al., A study of MBE growth-related defects in InAs/GaSb type-II supperlattices for long wavelength infrared detectors, Journal of Crystal Growth 425, 2015, עמ' 54–59

silverchair.com

watermark.silverchair.com

J. E. Davey and T. Pankey, Epitaxial GaAs Films Deposited by Vacuum Evaporation, Journal of Applied Physics 39/4, 1968, עמ' 1941-1948

springer.com

link.springer.com

J. H. Neave, B. A. Joyce, P. J. Dobson and N. Norton, Dynamics of film growth of GaAs by MBE from Rheed observations, Applied Physics A 31, 1983, עמ' 1-8
A. Y. Cho and I. Hayashi, Epitaxy of silicon doped gallium arsenide by molecular beam method, Metallurgical Transactions 2/3, 1971, עמ' 777–780

tau.ac.il

ilangoldfarb.sites.tau.ac.il

Surface Science and Nanostructures Laboratory, Last retrieved on March 9, 2024

technion.ac.il

oxides.net.technion.ac.il

L. Kornblum, Oxide Electronics Lab, Last retrieved on March10, 2024

weizmann.ac.il

V.Y. Umansky, Weizmann Institute of Science, Department of Condensed Matter Physics - Molecular Beam Epitaxy for high mobility semiconductor, ‏March 9, 2024