תחמוצת הפניום (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "תחמוצת הפניום" in Hebrew language version.

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aip.org

scitation.aip.org

ראו טבלה 3, V. Miikkulainen (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113: 021301. doi:10.1063/1.4757907.
K.-L. Lin (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109: 084104. doi:10.1063/1.3567915.

aps.org

journals.aps.org

Bersch, Eric. "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78: 085114. doi:10.1103/PhysRevB.78.085114.

doi.org

Bersch, Eric. "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78: 085114. doi:10.1103/PhysRevB.78.085114.
ראו טבלה 3, V. Miikkulainen (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113: 021301. doi:10.1063/1.4757907.
J.H. Choi (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R. 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.
Robertson, J (2006). "High dielectric constant gate oxides for metal oxide Si transistors". Reports on Progress in Physics. 69 (2): 327–396. doi:10.1088/0034-4885/69/2/R02.
K.-L. Lin (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109: 084104. doi:10.1063/1.3567915.

intel.com

Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance

iop.org

iopscience.iop.org

Robertson, J (2006). "High dielectric constant gate oxides for metal oxide Si transistors". Reports on Progress in Physics. 69 (2): 327–396. doi:10.1088/0034-4885/69/2/R02.

omega.co.uk

Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., retrieved 2008-12-03

sciencedirect.com

J.H. Choi (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R. 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.