תחמוצת טנטלום (Hebrew Wikipedia)

Analysis of information sources in references of the Wikipedia article "תחמוצת טנטלום" in Hebrew language version.

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7doi.org

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1archive.org

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1springer.com

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1sciencedirect.com

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1iop.org

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archive.org

Fairbrother, Frederick (1967). The Chemistry of Niobium and Tantalum. New York: Elsevier Publishing Company. pp. 1–28. ISBN 978-0-444-40205-9.

doi.org

Ezhilvalavan, S.; Tseng, T. Y. (1999). "Preparation and properties of tantalum pentoxide (Ta₂O₅) thin films for ultra large scale integrated circuits (ULSIs) application - a review". Journal of Materials Science: Materials in Electronics. 10 (1): 9–31. doi:10.1023/A:1008970922635.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
Chaneliere, C; Autran, J L; Devine, R A B; Balland, B (1998). "Tantalum pentoxide (Ta₂O₅) thin films for advanced dielectric applications". Materials Science and Engineering: R. 22 (6): 269–322. doi:10.1016/S0927-796X(97)00023-5.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)
Robertson, J (2006). "High dielectric constant gate oxides for metal oxide Si transistors". Reports on Progress in Physics. 69 (2): 327–396. doi:10.1088/0034-4885/69/2/R02.
Wang, X; (2004). "A Novel MONOS-Type Nonvolatile Memory Using High- $\kappa$ Dielectrics for Improved Data Retention and Programming Speed". IEEE Transactions on Electron Devices. 51 (4): 597. doi:10.1109/TED.2004.824684.{{cite journal}}: תחזוקה - ציטוט: extra punctuation (link) תחזוקה - ציטוט: multiple names: authors list (link)
Zhu, H; (2013). "Design and Fabrication of Ta₂O₅ Stacks for Discrete Multibit Memory Application". IEEE Transactions on Nanotechnology. 12 (6): 1151–1157. doi:10.1109/TNANO.2013.2281817.{{cite journal}}: תחזוקה - ציטוט: extra punctuation (link) תחזוקה - ציטוט: multiple names: authors list (link)
Yoon, J.H; (2014). "Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta₂O₅/HfO_2-x/TiN Structure". Advanced Functional Materials. doi:10.1002/adfm.201400064.{{cite journal}}: תחזוקה - ציטוט: extra punctuation (link) תחזוקה - ציטוט: multiple names: authors list (link)
Lee, M-.J; (2011). "A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5-x/TaO_2-x bilayer structures". Nature Materials. 10: 625. doi:10.1038/NMAT3070.{{cite journal}}: תחזוקה - ציטוט: extra punctuation (link) תחזוקה - ציטוט: multiple names: authors list (link)

iop.org

iopscience.iop.org

Robertson, J (2006). "High dielectric constant gate oxides for metal oxide Si transistors". Reports on Progress in Physics. 69 (2): 327–396. doi:10.1088/0034-4885/69/2/R02.

sciencedirect.com

Chaneliere, C; Autran, J L; Devine, R A B; Balland, B (1998). "Tantalum pentoxide (Ta₂O₅) thin films for advanced dielectric applications". Materials Science and Engineering: R. 22 (6): 269–322. doi:10.1016/S0927-796X(97)00023-5.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)

springer.com

link.springer.com

Ezhilvalavan, S.; Tseng, T. Y. (1999). "Preparation and properties of tantalum pentoxide (Ta₂O₅) thin films for ultra large scale integrated circuits (ULSIs) application - a review". Journal of Materials Science: Materials in Electronics. 10 (1): 9–31. doi:10.1023/A:1008970922635.{{cite journal}}: תחזוקה - ציטוט: multiple names: authors list (link)