Proses 5 nm (Indonesian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Proses 5 nm" in Indonesian language version.

refsWebsite

Global rank Indonesian rank

27web.archive.org

1^st place

10anandtech.com

1,383^rd place

2,933^rd place

7wikichip.org

low place

4ieee.org

652^nd place

1,575^th place

3doi.org

2^nd place

4^th place

3semiwiki.com

low place

3tsmc.com

low place

2semiengineering.com

low place

1hpcwire.com

low place

1pcgamesn.com

1,748^th place

5,592^nd place

1theinquirer.net

low place

7,177^th place

1thefreelibrary.com

518^th place

1,242^nd place

1semi.org

low place

1ibm.com

1,131^st place

1,319^th place

1pcmag.com

1,060^th place

976^th place

1nvidia.com

2,503^rd place

9,082^nd place

1angstronomics.com

low place

1theverge.com

114^th place

185^th place

1techpowerup.com

4,960^th place

low place

anandtech.com

Cutress, Dr Ian. "'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5". AnandTech. Diarsipkan dari versi asli tanggal 30 August 2020. Diakses tanggal 2020-08-28.
Shilov, Anton. "Samsung Completes Development of 5nm EUV Process Technology". AnandTech. Diarsipkan dari versi asli tanggal 20 April 2019. Diakses tanggal 31 May 2019.
"Samsung Foundry Vows to Surpass TSMC within Five Years".
Cutress, Dr Ian. "Intel's Process Roadmap to 2025: with 4nm, 3nm, 20A and 18A?!". AnandTech. Diarsipkan dari versi asli tanggal 3 November 2021. Diakses tanggal 27 July 2021.
Smith, Ryan. "Intel 4 Process Node In Detail: 2x Density Scaling, 20% Improved Performance". AnandTech. Diarsipkan dari versi asli tanggal 13 June 2022. Diakses tanggal 13 June 2022.
"TSMC Unveils N4X Node". AnandTech. 17 December 2021. Diarsipkan dari versi asli tanggal 25 May 2022. Diakses tanggal 25 May 2022.
Bonshor, Gavin (20 October 2022). "Intel Core i9-13900K and i5-13600K Review: Raptor Lake Brings More Bite". AnandTech. Diakses tanggal 28 September 2023.
"Intel Unveils Meteor Lake Architecture: Intel 4 Heralds the Disaggregated Future of Mobile CPUs".
Shilov, Anton. "Samsung: Deployment of 3nm GAE Node on Track for 2022". AnandTech. Diarsipkan dari versi asli tanggal 27 July 2021. Diakses tanggal 2021-07-27.
Shilov, Anton. "TSMC Update: 2nm in Development, 3nm and 4nm on Track for 2022". AnandTech. Diarsipkan dari versi asli tanggal 27 July 2021. Diakses tanggal 2021-07-27.

angstronomics.com

"The TRUTH of TSMC 5nm".

doi.org

Doris, Bruce B.; Dokumaci, Omer H.; Ieong, Meikei K.; Mocuta, Anda; Zhang, Ying; Kanarsky, Thomas S.; Roy, R. A. (December 2002). Extreme scaling with ultra-thin Si channel MOSFETs. Digest. International Electron Devices Meeting. hlm. 267–270. doi:10.1109/IEDM.2002.1175829. ISBN 0-7803-7462-2.
Wakabayashi, Hitoshi; Yamagami, Shigeharu; Ikezawa, Nobuyuki; Ogura, Atsushi; Narihiro, Mitsuru; Arai, K.; Ochiai, Y.; Takeuchi, K.; Yamamoto, T.; Mogami, T. (December 2003). Sub-10-nm planar-bulk-CMOS devices using lateral junction control. IEEE International Electron Devices Meeting 2003. hlm. 20.7.1–20.7.3. doi:10.1109/IEDM.2003.1269446. ISBN 0-7803-7872-5.
J.C. Liu; et al. A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application. 2020 IEEE International Electron Devices Meeting (IEDM). doi:10.1109/IEDM13553.2020.9372009.

hpcwire.com

"Marvell and TSMC Collaborate to Deliver Data Infrastructure Portfolio on 5nm Technology". HPCwire (dalam bahasa Inggris). Diarsipkan dari versi asli tanggal 15 September 2020. Diakses tanggal 2020-08-28.

ibm.com

Huiming, Bu (June 5, 2017). "5 nanometer transistors inching their way into chips". IBM. Diarsipkan dari versi asli tanggal 9 June 2021. Diakses tanggal 9 June 2021.

ieee.org

irds.ieee.org

International Roadmap for Devices and Systems: 2021 Update: More Moore, IEEE, 2021, hlm. 7, diarsipkan dari versi asli tanggal 7 August 2022, diakses tanggal 7 August 2022
"IRDS international roadmap for devices and systems 2017 edition" (PDF). Diarsipkan dari versi asli (PDF) tanggal 25 October 2018.
INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS 2017 EDITION - MORE MOORE (PDF), ITRS, 2017, Section 4.5 Table MM-10 (p.12) entries : "SRAM bitcell area (um2)" ; "SRAM 111 bit cell area density - Mbits/mm2", diarsipkan dari versi asli (PDF) tanggal 25 October 2018, diakses tanggal 24 October 2018

spectrum.ieee.org

Samuel K. Moore (21 July 2020). "A Better Way to Measure Progress in Semiconductors: It's time to throw out the old Moore's Law metric". IEEE Spectrum. IEEE. Diarsipkan dari versi asli tanggal 2 December 2020. Diakses tanggal 20 April 2021.

nvidia.com

nvidianews.nvidia.com

"NVIDIA Delivers Quantum Leap in Performance, Introduces New Era of Neural Rendering With GeForce RTX 40 Series". NVIDIA Newsroom. Diakses tanggal 20 September 2022.

pcgamesn.com

"TSMC's 7nm, 5nm, and 3nm "are just numbers… it doesn't matter what the number is"". Diarsipkan dari versi asli tanggal 17 June 2020. Diakses tanggal 20 April 2020.

pcmag.com

uk.pcmag.com

"IBM Figures Out How to Make 5nm Chips". Uk.pcmag.com. 5 June 2017. Diarsipkan dari versi asli tanggal 3 December 2017. Diakses tanggal 7 December 2017.

semi.org

"The Roadmap to 5nm: Convergence of Many Solutions Needed". Semi.org. Diarsipkan dari versi asli tanggal 26 November 2015. Diakses tanggal 25 November 2015.

semiengineering.com

"Quantum Effects At 7/5nm And Beyond". Semiconductor Engineering (dalam bahasa Inggris). Diarsipkan dari versi asli tanggal 15 July 2018. Diakses tanggal 2018-07-15.
Mark LaPedus (2016-01-20). "5nm Fab Challenges". Diarsipkan dari versi asli tanggal 27 January 2016. Diakses tanggal 22 January 2016. Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel's nanowire FET, sometimes called a gate-all-around FET, is said to meet the device requirements for 5nm, as defined by the International Technology Roadmap for Semiconductors (ITRS).

semiwiki.com

"IMEC and Cadence Disclose 5nm Test Chip". Semiwiki.com. Diarsipkan dari versi asli tanggal 26 November 2015. Diakses tanggal 25 Nov 2015.
Jones, Scotten (29 April 2020), "Can TSMC Maintain Their Process Technology Lead", SemiWiki, diarsipkan dari versi asli tanggal 13 May 2022, diakses tanggal 11 April 2022
"Samsung Foundry Update 2019". SemiWiki. 6 August 2019. Diarsipkan dari versi asli tanggal 29 May 2022. Diakses tanggal 14 May 2022.

techpowerup.com

"Samsung 3 nm GAAFET Node Delayed to 2024". Diarsipkan dari versi asli tanggal 17 December 2021. Diakses tanggal 8 July 2021.

thefreelibrary.com

"NEC test-produces world's smallest transistor". Thefreelibrary.com. Diarsipkan dari versi asli tanggal 15 April 2017. Diakses tanggal 7 December 2017.

theinquirer.net

"IBM claims world's smallest silicon transistor - TheINQUIRER". Theinquirer.net. 2002-12-09. Diarsipkan dari versi asli tanggal May 31, 2011. Diakses tanggal 7 December 2017.

theverge.com

Gartenberg, Chaim (29 July 2021). "The summer Intel fell behind". The Verge. Diarsipkan dari versi asli tanggal 22 December 2021. Diakses tanggal 22 December 2021.

tsmc.com

pr.tsmc.com

"TSMC and OIP Ecosystem Partners Deliver Industry's First Complete Design Infrastructure for 5nm Process Technology" (Siaran pers). TSMC. 3 April 2019.
"TSMC Introduces N4X Process" (Siaran pers). TSMC. 16 December 2021.

tsmc.com

"The Future Is Now (blog post)". TSMC. 16 December 2021. Diarsipkan dari versi asli tanggal 7 May 2022. Diakses tanggal 25 May 2022.

web.archive.org

Cutress, Dr Ian. "'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5". AnandTech. Diarsipkan dari versi asli tanggal 30 August 2020. Diakses tanggal 2020-08-28.
"Marvell and TSMC Collaborate to Deliver Data Infrastructure Portfolio on 5nm Technology". HPCwire (dalam bahasa Inggris). Diarsipkan dari versi asli tanggal 15 September 2020. Diakses tanggal 2020-08-28.
International Roadmap for Devices and Systems: 2021 Update: More Moore, IEEE, 2021, hlm. 7, diarsipkan dari versi asli tanggal 7 August 2022, diakses tanggal 7 August 2022
"TSMC's 7nm, 5nm, and 3nm "are just numbers… it doesn't matter what the number is"". Diarsipkan dari versi asli tanggal 17 June 2020. Diakses tanggal 20 April 2020.
Samuel K. Moore (21 July 2020). "A Better Way to Measure Progress in Semiconductors: It's time to throw out the old Moore's Law metric". IEEE Spectrum. IEEE. Diarsipkan dari versi asli tanggal 2 December 2020. Diakses tanggal 20 April 2021.
"Quantum Effects At 7/5nm And Beyond". Semiconductor Engineering (dalam bahasa Inggris). Diarsipkan dari versi asli tanggal 15 July 2018. Diakses tanggal 2018-07-15.
"IBM claims world's smallest silicon transistor - TheINQUIRER". Theinquirer.net. 2002-12-09. Diarsipkan dari versi asli tanggal May 31, 2011. Diakses tanggal 7 December 2017.
"NEC test-produces world's smallest transistor". Thefreelibrary.com. Diarsipkan dari versi asli tanggal 15 April 2017. Diakses tanggal 7 December 2017.
"IMEC and Cadence Disclose 5nm Test Chip". Semiwiki.com. Diarsipkan dari versi asli tanggal 26 November 2015. Diakses tanggal 25 Nov 2015.
"The Roadmap to 5nm: Convergence of Many Solutions Needed". Semi.org. Diarsipkan dari versi asli tanggal 26 November 2015. Diakses tanggal 25 November 2015.
Mark LaPedus (2016-01-20). "5nm Fab Challenges". Diarsipkan dari versi asli tanggal 27 January 2016. Diakses tanggal 22 January 2016. Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel's nanowire FET, sometimes called a gate-all-around FET, is said to meet the device requirements for 5nm, as defined by the International Technology Roadmap for Semiconductors (ITRS).
Huiming, Bu (June 5, 2017). "5 nanometer transistors inching their way into chips". IBM. Diarsipkan dari versi asli tanggal 9 June 2021. Diakses tanggal 9 June 2021.
"IBM Figures Out How to Make 5nm Chips". Uk.pcmag.com. 5 June 2017. Diarsipkan dari versi asli tanggal 3 December 2017. Diakses tanggal 7 December 2017.
"IRDS international roadmap for devices and systems 2017 edition" (PDF). Diarsipkan dari versi asli (PDF) tanggal 25 October 2018.
Jones, Scotten (29 April 2020), "Can TSMC Maintain Their Process Technology Lead", SemiWiki, diarsipkan dari versi asli tanggal 13 May 2022, diakses tanggal 11 April 2022
"Samsung Foundry Update 2019". SemiWiki. 6 August 2019. Diarsipkan dari versi asli tanggal 29 May 2022. Diakses tanggal 14 May 2022.
"5 nm lithography process". WikiChip. Diarsipkan dari versi asli tanggal 6 November 2020. Diakses tanggal 30 April 2017.
INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS 2017 EDITION - MORE MOORE (PDF), ITRS, 2017, Section 4.5 Table MM-10 (p.12) entries : "SRAM bitcell area (um2)" ; "SRAM 111 bit cell area density - Mbits/mm2", diarsipkan dari versi asli (PDF) tanggal 25 October 2018, diakses tanggal 24 October 2018
Shilov, Anton. "Samsung Completes Development of 5nm EUV Process Technology". AnandTech. Diarsipkan dari versi asli tanggal 20 April 2019. Diakses tanggal 31 May 2019.
Cutress, Dr Ian. "Intel's Process Roadmap to 2025: with 4nm, 3nm, 20A and 18A?!". AnandTech. Diarsipkan dari versi asli tanggal 3 November 2021. Diakses tanggal 27 July 2021.
Smith, Ryan. "Intel 4 Process Node In Detail: 2x Density Scaling, 20% Improved Performance". AnandTech. Diarsipkan dari versi asli tanggal 13 June 2022. Diakses tanggal 13 June 2022.
"The Future Is Now (blog post)". TSMC. 16 December 2021. Diarsipkan dari versi asli tanggal 7 May 2022. Diakses tanggal 25 May 2022.
"TSMC Unveils N4X Node". AnandTech. 17 December 2021. Diarsipkan dari versi asli tanggal 25 May 2022. Diakses tanggal 25 May 2022.
Gartenberg, Chaim (29 July 2021). "The summer Intel fell behind". The Verge. Diarsipkan dari versi asli tanggal 22 December 2021. Diakses tanggal 22 December 2021.
"Samsung 3 nm GAAFET Node Delayed to 2024". Diarsipkan dari versi asli tanggal 17 December 2021. Diakses tanggal 8 July 2021.
Shilov, Anton. "Samsung: Deployment of 3nm GAE Node on Track for 2022". AnandTech. Diarsipkan dari versi asli tanggal 27 July 2021. Diakses tanggal 2021-07-27.
Shilov, Anton. "TSMC Update: 2nm in Development, 3nm and 4nm on Track for 2022". AnandTech. Diarsipkan dari versi asli tanggal 27 July 2021. Diakses tanggal 2021-07-27.

wikichip.org

fuse.wikichip.org

"Samsung 5 nm and 4 nm Update". WikiChip. 19 October 2019.
"Samsung 3nm GAAFET Enters Risk Production; Discusses Next-Gen Improvements". 5 July 2022.
"N3E Replaces N3; Comes in Many Flavors". 4 September 2022.
"Did We Just Witness The Death Of SRAM?". 4 December 2022.
"TSMC N3, and Challenges Ahead". 27 May 2023.
Schor, David (19 June 2022). "A Look At Intel 4 Process Technology". WikiChip Fuse.

en.wikichip.org

"5 nm lithography process". WikiChip. Diarsipkan dari versi asli tanggal 6 November 2020. Diakses tanggal 30 April 2017.