Effetto Stark quantistico confinato (Italian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Effetto Stark quantistico confinato" in Italian language version.

refsWebsite

Global rank Italian rank

8doi.org

2^nd place

7^th place

7oadoi.org

799^th place

22^nd place

1aps.org

1,503^rd place

678^th place

1harvard.edu

18^th place

104^th place

1archive.org

6^th place

8^th place

aps.org

link.aps.org

D. Miller, Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect, in Phys. Rev. Lett., vol. 53, 1984, pp. 2173-2176, Bibcode:1984PhRvL..53.2173M, DOI:10.1103/PhysRevLett.53.2173.

archive.org

Shun Lien Chuang, Physics of Photonics Devices, Chapter 3, Wiley, 2009, ISBN 978-0-470-29319-5.

doi.org

dx.doi.org

D. Miller, Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect, in Phys. Rev. Lett., vol. 53, 1984, pp. 2173-2176, Bibcode:1984PhRvL..53.2173M, DOI:10.1103/PhysRevLett.53.2173.
David A.B. Miller, Device Requirements for Optical Interconnects to Silicon Chips, in Proceedings of the IEEE, vol. 97, n. 7, 2009, pp. 1166-1185, DOI:10.1109/JPROC.2009.2014298.
Joseph S. Weiner, David A. B. Miller e Daniel S. Chemla, Quadratic electro‐optic effect due to the quantum‐confined Stark effect in quantum wells, in Applied Physics Letters, vol. 50, n. 13, 30 marzo 1987, pp. 842-844, DOI:10.1063/1.98008.
Yu-Hsuan Kuo, Yong Kyu Lee, Yangsi Ge, Shen Ren, Jonathan E. Roth, Theodore I. Kamins, David A. B. Miller e James S. Harris, Strong quantum-confined Stark effect in germanium quantum-well structures on silicon, in Nature, vol. 437, n. 7063, October 2005, pp. 1334-1336, DOI:10.1038/nature04204.
L Lever, Z Ikonić, A Valavanis, J D Cooper e R W Kelsall, Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics, in Journal of Lightwave Technology, November 2010, DOI:10.1109/JLT.2010.2081345.
Mohamed Said Rouifed, Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Giovanni Isella, Daniel Chrastina, Samson Edmond, Xavier Le Roux, Jean-René Coudevylle e Laurent Vivien, Quantum-confined Stark effect at 13 µm in Ge/Si_035Ge_065 quantum-well structure, in Optics Letters, vol. 37, n. 19, 18 settembre 2012, p. 3960, DOI:10.1364/OL.37.003960.
Papichaya Chaisakul, Delphine Marris-Morini, Mohamed-Saïd Rouifed, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle e Laurent Vivien, 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator, in Optics Express, vol. 20, n. 3, 26 gennaio 2012, p. 3219, DOI:10.1364/OE.20.003219.
Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Daniel Chrastina, Mohamed-Said Rouifed, Stefano Cecchi, Paul Crozat, Giovanni Isella e Laurent Vivien, Integrated germanium optical interconnects on silicon substrates, in Nature Photonics, vol. 8, n. 6, 11 maggio 2014, pp. 482-488, DOI:10.1038/NPHOTON.2014.73.

harvard.edu

adsabs.harvard.edu

D. Miller, Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect, in Phys. Rev. Lett., vol. 53, 1984, pp. 2173-2176, Bibcode:1984PhRvL..53.2173M, DOI:10.1103/PhysRevLett.53.2173.

oadoi.org

David A.B. Miller, Device Requirements for Optical Interconnects to Silicon Chips, in Proceedings of the IEEE, vol. 97, n. 7, 2009, pp. 1166-1185, DOI:10.1109/JPROC.2009.2014298.
Joseph S. Weiner, David A. B. Miller e Daniel S. Chemla, Quadratic electro‐optic effect due to the quantum‐confined Stark effect in quantum wells, in Applied Physics Letters, vol. 50, n. 13, 30 marzo 1987, pp. 842-844, DOI:10.1063/1.98008.
Yu-Hsuan Kuo, Yong Kyu Lee, Yangsi Ge, Shen Ren, Jonathan E. Roth, Theodore I. Kamins, David A. B. Miller e James S. Harris, Strong quantum-confined Stark effect in germanium quantum-well structures on silicon, in Nature, vol. 437, n. 7063, October 2005, pp. 1334-1336, DOI:10.1038/nature04204.
L Lever, Z Ikonić, A Valavanis, J D Cooper e R W Kelsall, Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics, in Journal of Lightwave Technology, November 2010, DOI:10.1109/JLT.2010.2081345.
Mohamed Said Rouifed, Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Giovanni Isella, Daniel Chrastina, Samson Edmond, Xavier Le Roux, Jean-René Coudevylle e Laurent Vivien, Quantum-confined Stark effect at 13 µm in Ge/Si_035Ge_065 quantum-well structure, in Optics Letters, vol. 37, n. 19, 18 settembre 2012, p. 3960, DOI:10.1364/OL.37.003960.
Papichaya Chaisakul, Delphine Marris-Morini, Mohamed-Saïd Rouifed, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle e Laurent Vivien, 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator, in Optics Express, vol. 20, n. 3, 26 gennaio 2012, p. 3219, DOI:10.1364/OE.20.003219.
Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Daniel Chrastina, Mohamed-Said Rouifed, Stefano Cecchi, Paul Crozat, Giovanni Isella e Laurent Vivien, Integrated germanium optical interconnects on silicon substrates, in Nature Photonics, vol. 8, n. 6, 11 maggio 2014, pp. 482-488, DOI:10.1038/NPHOTON.2014.73.