LED (Italian Wikipedia)

(EN) Henry Joseph Round, A note on carborundum, in Electrical World, vol. 19, 1907, p. 309.
(EN) Bela G. Lipták, Instrument Engineers' Handbook: Process control and optimization, CRC Press, 2005, p. 537, ISBN 0-8493-1081-4.
(EN) Gerd Mueller, Electroluminescence I, Academic Press, 2000, pp. 67-69, ISBN 0-12-752173-9.
(EN) Peter Capper e Michael Mauk, Liquid phase epitaxy of electronic, optical, and optoelectronic materials, Wiley, 2007, p. 389, ISBN 978-0-470-85290-3.
«...faceted structures are of interest for solar cells, LEDs, thermophotovoltaic devices, and detectors in that nonplanar surfaces and facets can enhance optical coupling and light-trapping effects, [with example microphotograph of a faceted crystal substrate].»
(EN) John Dakin e Robert G. W. Brown, Handbook of optoelectronics, Volume 2, Taylor & Francis, 2006, p. 356, ISBN 0-7503-0646-7.
«Die shaping is a step towards the ideal solution, that of a point light source at the center of a spherical semiconductor die.»
(EN) E. Fred Schubert, Epoxy Encapsulants, in Light-emitting diodes, Cambridge University Press, 2006, p. 97, ISBN 0-521-86538-7.
«The light extraction efficiency can be enhanced by using dome-shaped encapsulants with a large refractive index»

cam.ac.uk (Global: 670^th place; Italian: 1,164^th place)

gan.msm.cam.ac.uk

(EN) GaN on Silicon, su gan.msm.cam.ac.uk, Cambridge Centre for Gallium Nitride.

compoundsemiconductor.net (Global: low place; Italian: low place)

(EN) Increasing The Competitiveness Of The GaN-on-silicon LED, su compoundsemiconductor.net, 30 marzo 2016.

datamath.org (Global: low place; Italian: low place)

(EN) George Rostky, LEDs cast Monsanto in Unfamiliar Role, in Electronic Engineering Times (EETimes), n. 944, marzo 1997.

digikey.com (Global: low place; Italian: low place)

(EN) Steven Keeping, Material and Manufacturing Improvements, su digikey.com, DigiKey, 15 gennaio 2013.
(EN) Steven Keeping, Manufacturers Shift Attention to Light Quality to Further LED Market Share Gains, su digikey.com, DigiKey, 9 dicembre 2014.
(EN) Steven Keeping, Will Silicon Substrates Push LED Lighting, su digikey.com, DigiKey, 24 settembre 2013.
(EN) Steven Keeping, Improved Silicon-Substrate LEDs Address High Solid-State Lighting Costs, su digikey.com, DigiKey, 23 marzo 2015.

doi.org (Global: 2^nd place; Italian: 7^th place)

dx.doi.org

(EN) Oleg V. Losev, Luminous carborundum detector and detection effect and oscillations with crystals, in Philosophical Magazine, 7ª serie, vol. 5, n. 39, novembre 1928, pp. 1024-1044, DOI:10.1080/14786441108564683, ISSN 1941-5982 (WC · ACNP).
(EN) N. Zheludev, The life and times of the LED: a 100-year history (PDF), in Nature Photonics, vol. 1, n. 4, 2007, pp. 189-192, Bibcode:2007NaPho...1..189Z, DOI:10.1038/nphoton.2007.34. URL consultato l'11 aprile 2007 (archiviato dall'url originale l'11 maggio 2011).
(FR) George Destriau, Recherches sur les scintillations des sulfures de zinc aux rayons, in Journal de Chimie Physique, vol. 33, 1936, pp. 587-625, DOI:10.1051/jcp/1936330587.
(EN) K. Lehovec, C. A. Accardo e E. Jamgochian, Injected Light Emission of Silicon Carbide Crystals, in Physical Review, vol. 83, n. 3, 1951, pp. 603-607, Bibcode:1951PhRv...83..603L, DOI:10.1103/PhysRev.83.603 (archiviato dall'url originale l'11 dicembre 2014).
(EN) K. Lehovec, C. A. Accardo e E. Jamgochian, Injected Light Emission of Silicon Carbide Crystals, in Physical Review, vol. 89, n. 1, 1953, pp. 20-25, Bibcode:1953PhRv...89...20L, DOI:10.1103/PhysRev.89.20.
(EN) Rubin Braunstein, Radiative Transitions in Semiconductors, in Physical Review, vol. 99, n. 6, 1955, pp. 1892-1893, Bibcode:1955PhRv...99.1892B, DOI:10.1103/PhysRev.99.1892.
(EN) Herbert Kroemer, The Double-Heterostructure Concept: How It Got Started, in Proceedings of the IEEE, vol. 101, n. 10, 16 settembre 2013, pp. 2183-2187, DOI:10.1109/JPROC.2013.2274914.
«…had set up a simple optical communications link: Music emerging from a record player was used via suitable electronics to modulate the forward current of a GaAs diode. The emitted light was detected by a PbS diode some distance away. This signal was fed into an audio amplifier and played back by a loudspeaker. Intercepting the beam stopped the music. We had a great deal of fun playing with this setup.»
(EN) W. N. Carr e G. E. Pittman, One-watt GaAs p-n junction infrared source, in Applied Physics Letters, vol. 3, n. 10, novembre 1963, pp. 173-175, Bibcode:1963ApPhL...3..173C, DOI:10.1063/1.1753837.
(EN) Nick Holonyak Jr. e S. F. Bevacqua, Coherent (Visible) Light Emission from Ga(As_1−x P_x) Junctions, in Applied Physics Letters, vol. 1, n. 4, dicembre 1962, p. 82, Bibcode:1962ApPhL...1...82H, DOI:10.1063/1.1753706 (archiviato dall'url originale il 14 ottobre 2012).
(EN) T. S. Perry, M. George Craford [biography], in IEEE Spectrum, vol. 32, n. 2, 1995, pp. 52-55, DOI:10.1109/6.343989.
(EN) T. P. Pearsall, B. I. Miller, R. J. Capik e K. J. Bachmann, Efficient, Lattice-matched, Double Heterostructure LEDs at 1.1 mm from Ga_xIn_1−xAs_yP_1−y by Liquid-phase Epitaxy, in Appl. Phys. Lett., vol. 28, n. 9, 1976, p. 499, Bibcode:1976ApPhL..28..499P, DOI:10.1063/1.88831.
(EN) S. -I. Park, Y. Xiong, R. -H. Kim, P. Elvikis, M. Meitl, D. -H. Kim, J. Wu, J. Yoon, C. -J. Yu, Z. Liu, Y. Huang, K. -C. Hwang, P. Ferreira, X. Li, K. Choquette e J. A. Rogers, Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays (PDF), in Science, vol. 325, n. 5943, 2009, pp. 977-981, Bibcode:2009Sci...325..977P, DOI:10.1126/science.1175690, PMID 19696346 (archiviato dall'url originale il 24 ottobre 2015).
(EN) S. Nakamura, T. Mukai e M. Senoh, Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting-Diodes, in Appl. Phys. Lett., vol. 64, n. 13, 1994, p. 1687, Bibcode:1994ApPhL..64.1687N, DOI:10.1063/1.111832.
(EN) A. Dadgar, A. Alam, T. Riemann, J. Bläsing, A. Diez, M. Poschenrieder, M. Strassburg, M. Heuken, J. Christen e A. Krost, Crack-Free InGaN/GaN Light Emitters on Si(111), in Physica Status Solidi A, vol. 188, 2001, pp. 155-158, DOI:10.1002/1521-396X(200111)188:1<155::AID-PSSA155>3.0.CO;2-P.
(EN) A. Dadgar, M. Poschenrieder, J. BläSing, K. Fehse, A. Diez e A. Krost, Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si\sub x \sub y masking, in Applied Physics Letters, vol. 80, n. 20, 2002, p. 3670, Bibcode:2002ApPhL..80.3670D, DOI:10.1063/1.1479455.
(EN) Shin-ya Nunoue, Toshiki Hikosaka, Hisashi Yoshida, Jumpei Tajima, Shigeya Kimura, Naoharu Sugiyama, Koichi Tachibana, Tomonari Shioda, Taisuke Sato, Eiji Muramoto e Masaaki Onomura, LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges, in 2013 IEEE International Electron Devices Meeting, 2013, DOI:10.1109/IEDM.2013.6724622, ISBN 978-1-4799-2306-9.
(EN) Haitz's law, in Nature Photonics, vol. 1, n. 1, 2007, p. 23, Bibcode:2007NaPho...1...23., DOI:10.1038/nphoton.2006.78.
Demetrio Iero, Massimo Merenda e Sonia Polimeni, A Technique for the Direct Measurement of the Junction Temperature in Power Light Emitting Diodes, in IEEE Sensors Journal, 2020, pp. 1-1, DOI:10.1109/JSEN.2020.3037132. URL consultato il 23 novembre 2020.
Massimo Merenda, Carlo Porcaro e Francesco Giuseppe Della Corte, LED junction temperature prediction using machine learning techniques, in 2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), IEEE, 2020-06, pp. 207-211, DOI:10.1109/MELECON48756.2020.9140539. URL consultato il 23 novembre 2020.

dtic.mil (Global: 833^rd place; Italian: 3,367^th place)

apps.dtic.mil

(EN) Semiconductor Single-Crystal Circuit Development (PDF), su apps.dtic.mil, a cura di W. T. Matzen, Contract No. AF33(616)-6600, Rept. No ASD-TDR-63-281, Texas Instruments Inc., marzo 1963.

edisontechcenter.org (Global: low place; Italian: low place)

(EN) Thomas M. Okon e James R. Biard, The First Practical LED (PDF), su edisontechcenter.org, Edison Tech Center, 2015. URL consultato il 2 febbraio 2016.

eia.gov (Global: 2,290^th place; Italian: 5,276^th place)

(EN) LED bulb efficiency expected to continue improving as cost declines, su eia.gov, U.S. Energy Information Administration, 19 marzo 2014.

electronicproducts.com (Global: low place; Italian: low place)

(EN) Jeffrey Bausch, The Long History of Light Emitting Diodes, Hearst Business Communications, dicembre 2011.

electronicsweekly.com (Global: low place; Italian: low place)

(EN) Steve Bush, Toshiba gets out of GaN-on-Si leds, su electronicsweekly.com, 30 giugno 2016.

forbes.com (Global: 54^th place; Italian: 97^th place)

(EN) The LED Illumination Revolution, in Forbes, 27 febbraio 2008.

freepatentsonline.com (Global: 5,449^th place; Italian: 6,476^th place)

(EN) James R. Biard e Gary Pittman, Texas Instruments, Semiconductor radiant diode, US3293513, United States Patent Office (20 dicembre 1966). URL consultato il 2 agosto 2019.
(EN) Theodore D. Moustakas, Università di Boston, Highly insulating monocrystalline gallium nitride thin films, {{{numero}}} [18 marzo 1991] (11 novembre 1997).

google.com (Global: 163^rd place; Italian: 289^th place)

(EN) Jean Amédée Hoerni, Fairchild Semiconductor, Method of Manufacturing Semiconductor Devices, US3025589 [4 novembre 1955] (20 marzo 1962).

harvard.edu (Global: 18^th place; Italian: 104^th place)

adsabs.harvard.edu

(EN) N. Zheludev, The life and times of the LED: a 100-year history (PDF), in Nature Photonics, vol. 1, n. 4, 2007, pp. 189-192, Bibcode:2007NaPho...1..189Z, DOI:10.1038/nphoton.2007.34. URL consultato l'11 aprile 2007 (archiviato dall'url originale l'11 maggio 2011).
(EN) K. Lehovec, C. A. Accardo e E. Jamgochian, Injected Light Emission of Silicon Carbide Crystals, in Physical Review, vol. 83, n. 3, 1951, pp. 603-607, Bibcode:1951PhRv...83..603L, DOI:10.1103/PhysRev.83.603 (archiviato dall'url originale l'11 dicembre 2014).
(EN) K. Lehovec, C. A. Accardo e E. Jamgochian, Injected Light Emission of Silicon Carbide Crystals, in Physical Review, vol. 89, n. 1, 1953, pp. 20-25, Bibcode:1953PhRv...89...20L, DOI:10.1103/PhysRev.89.20.
(EN) Rubin Braunstein, Radiative Transitions in Semiconductors, in Physical Review, vol. 99, n. 6, 1955, pp. 1892-1893, Bibcode:1955PhRv...99.1892B, DOI:10.1103/PhysRev.99.1892.
(EN) W. N. Carr e G. E. Pittman, One-watt GaAs p-n junction infrared source, in Applied Physics Letters, vol. 3, n. 10, novembre 1963, pp. 173-175, Bibcode:1963ApPhL...3..173C, DOI:10.1063/1.1753837.
(EN) Nick Holonyak Jr. e S. F. Bevacqua, Coherent (Visible) Light Emission from Ga(As_1−x P_x) Junctions, in Applied Physics Letters, vol. 1, n. 4, dicembre 1962, p. 82, Bibcode:1962ApPhL...1...82H, DOI:10.1063/1.1753706 (archiviato dall'url originale il 14 ottobre 2012).
(EN) T. P. Pearsall, B. I. Miller, R. J. Capik e K. J. Bachmann, Efficient, Lattice-matched, Double Heterostructure LEDs at 1.1 mm from Ga_xIn_1−xAs_yP_1−y by Liquid-phase Epitaxy, in Appl. Phys. Lett., vol. 28, n. 9, 1976, p. 499, Bibcode:1976ApPhL..28..499P, DOI:10.1063/1.88831.
(EN) S. -I. Park, Y. Xiong, R. -H. Kim, P. Elvikis, M. Meitl, D. -H. Kim, J. Wu, J. Yoon, C. -J. Yu, Z. Liu, Y. Huang, K. -C. Hwang, P. Ferreira, X. Li, K. Choquette e J. A. Rogers, Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays (PDF), in Science, vol. 325, n. 5943, 2009, pp. 977-981, Bibcode:2009Sci...325..977P, DOI:10.1126/science.1175690, PMID 19696346 (archiviato dall'url originale il 24 ottobre 2015).
(EN) S. Nakamura, T. Mukai e M. Senoh, Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting-Diodes, in Appl. Phys. Lett., vol. 64, n. 13, 1994, p. 1687, Bibcode:1994ApPhL..64.1687N, DOI:10.1063/1.111832.
(EN) A. Dadgar, M. Poschenrieder, J. BläSing, K. Fehse, A. Diez e A. Krost, Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si\sub x \sub y masking, in Applied Physics Letters, vol. 80, n. 20, 2002, p. 3670, Bibcode:2002ApPhL..80.3670D, DOI:10.1063/1.1479455.
(EN) Haitz's law, in Nature Photonics, vol. 1, n. 1, 2007, p. 23, Bibcode:2007NaPho...1...23., DOI:10.1038/nphoton.2006.78.

ieee.org (Global: 652^nd place; Italian: 1,028^th place)

ieeexplore.ieee.org

Demetrio Iero, Massimo Merenda e Sonia Polimeni, A Technique for the Direct Measurement of the Junction Temperature in Power Light Emitting Diodes, in IEEE Sensors Journal, 2020, pp. 1-1, DOI:10.1109/JSEN.2020.3037132. URL consultato il 23 novembre 2020.
Massimo Merenda, Carlo Porcaro e Francesco Giuseppe Della Corte, LED junction temperature prediction using machine learning techniques, in 2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), IEEE, 2020-06, pp. 207-211, DOI:10.1109/MELECON48756.2020.9140539. URL consultato il 23 novembre 2020.

spectrum.ieee.org

(EN) Nobel Shocker: RCA Had the First Blue LED in 1972, su spectrum.ieee.org, IEEE Spectrum, 9 ottobre 2014.

illinois.edu (Global: 1,349^th place; Italian: 3,087^th place)

ece.illinois.edu

(EN) Profilo personale di Nick Holonyak Jr., su ece.illinois.edu, Università dell'Illinois.

interactagram.com (Global: low place; Italian: low place)

(EN) Refraction — Snell's Law, su Interactagram.com.

iupac.org (Global: 538^th place; Italian: 93^rd place)

goldbook.iupac.org

(EN) IUPAC Gold Book, "light-emitting diode (LED)", su goldbook.iupac.org.

jmargolin.com (Global: low place; Italian: low place)

(EN) J. Margolin, The Road to the Transistor, su jmargolin.com.

ledinside.com (Global: low place; Italian: low place)

(EN) Samsung To Focus on Silicon-based LED Chip Technology in 2015, su ledinside.com, LED Inside, 17 marzo 2015.

ledsmagazine.com (Global: low place; Italian: low place)

(EN) Maury Wright, Samsung's Tarn reports progress in CSP and GaN-on-Si LEDs, su ledsmagazine.com, LEDs Magazine, 2 maggio 2016.

nih.gov (Global: 4^th place; Italian: 9^th place)

ncbi.nlm.nih.gov

(EN) S. -I. Park, Y. Xiong, R. -H. Kim, P. Elvikis, M. Meitl, D. -H. Kim, J. Wu, J. Yoon, C. -J. Yu, Z. Liu, Y. Huang, K. -C. Hwang, P. Ferreira, X. Li, K. Choquette e J. A. Rogers, Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays (PDF), in Science, vol. 325, n. 5943, 2009, pp. 977-981, Bibcode:2009Sci...325..977P, DOI:10.1126/science.1175690, PMID 19696346 (archiviato dall'url originale il 24 ottobre 2015).

nobelprize.org (Global: 301^st place; Italian: 270^th place)

(EN) Press Release Official Nobel Prize, su nobelprize.org, 7 ottobre 2014.

nytimes.com (Global: 7^th place; Italian: 19^th place)

(EN) Dennis Overbye, Nobel Prize in Physics, in The New York Times, 7 ottobre 2014.

oadoi.org (Global: 799^th place; Italian: 22^nd place)

(EN) Oleg V. Losev, Luminous carborundum detector and detection effect and oscillations with crystals, in Philosophical Magazine, 7ª serie, vol. 5, n. 39, novembre 1928, pp. 1024-1044, DOI:10.1080/14786441108564683, ISSN 1941-5982 (WC · ACNP).
(FR) George Destriau, Recherches sur les scintillations des sulfures de zinc aux rayons, in Journal de Chimie Physique, vol. 33, 1936, pp. 587-625, DOI:10.1051/jcp/1936330587.
(EN) Herbert Kroemer, The Double-Heterostructure Concept: How It Got Started, in Proceedings of the IEEE, vol. 101, n. 10, 16 settembre 2013, pp. 2183-2187, DOI:10.1109/JPROC.2013.2274914.
«…had set up a simple optical communications link: Music emerging from a record player was used via suitable electronics to modulate the forward current of a GaAs diode. The emitted light was detected by a PbS diode some distance away. This signal was fed into an audio amplifier and played back by a loudspeaker. Intercepting the beam stopped the music. We had a great deal of fun playing with this setup.»
(EN) W. N. Carr e G. E. Pittman, One-watt GaAs p-n junction infrared source, in Applied Physics Letters, vol. 3, n. 10, novembre 1963, pp. 173-175, Bibcode:1963ApPhL...3..173C, DOI:10.1063/1.1753837.
(EN) T. S. Perry, M. George Craford [biography], in IEEE Spectrum, vol. 32, n. 2, 1995, pp. 52-55, DOI:10.1109/6.343989.
(EN) T. P. Pearsall, B. I. Miller, R. J. Capik e K. J. Bachmann, Efficient, Lattice-matched, Double Heterostructure LEDs at 1.1 mm from Ga_xIn_1−xAs_yP_1−y by Liquid-phase Epitaxy, in Appl. Phys. Lett., vol. 28, n. 9, 1976, p. 499, Bibcode:1976ApPhL..28..499P, DOI:10.1063/1.88831.
(EN) S. Nakamura, T. Mukai e M. Senoh, Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting-Diodes, in Appl. Phys. Lett., vol. 64, n. 13, 1994, p. 1687, Bibcode:1994ApPhL..64.1687N, DOI:10.1063/1.111832.
(EN) A. Dadgar, A. Alam, T. Riemann, J. Bläsing, A. Diez, M. Poschenrieder, M. Strassburg, M. Heuken, J. Christen e A. Krost, Crack-Free InGaN/GaN Light Emitters on Si(111), in Physica Status Solidi A, vol. 188, 2001, pp. 155-158, DOI:10.1002/1521-396X(200111)188:1<155::AID-PSSA155>3.0.CO;2-P.
(EN) A. Dadgar, M. Poschenrieder, J. BläSing, K. Fehse, A. Diez e A. Krost, Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si\sub x \sub y masking, in Applied Physics Letters, vol. 80, n. 20, 2002, p. 3670, Bibcode:2002ApPhL..80.3670D, DOI:10.1063/1.1479455.
(EN) Haitz's law, in Nature Photonics, vol. 1, n. 1, 2007, p. 23, Bibcode:2007NaPho...1...23., DOI:10.1038/nphoton.2006.78.

oregonlive.com (Global: 886^th place; Italian: 2,176^th place)

(EN) Oregon tech CEO says Nobel Prize in Physics overlooks the actual inventors, su oregonlive.com, The Oregonian, 16 ottobre 2014.

patents.google.com (Global: 1,182^nd place; Italian: 2,474^th place)

(EN) David Stevenson, Wally Rhines e Herb Maruska, Gallium nitride metal-semiconductor junction light emitting diode, US3819974A [12 marzo 1973] (25 giugno 1974).
(EN) Naruhito Iwasa, Takashi Mukai e Shuji Nakamura, Nichia, Light-emitting gallium nitride-based compound semiconductor device, US5578839 [20 novembre 1992].

photonics.com (Global: low place; Italian: low place)

Welcome to Raleigh, LED capital USA, su photonics.com.

samsung.com (Global: 2,554^th place; Italian: 2,524^th place)

(EN) LM301B - SAMSUNG LED, su samsung.com, Samsung LED Global.
(EN) Samsung Achieves 220 Lumens per Watt with New Mid-Power LED Package, su samsung.com, 16 giugno 2017.

spie.org (Global: low place; Italian: low place)

(EN) Shuji Nakamura, Development of the Blue Light-Emitting Diode (XML), su spie.org, SPIE Newsroom. URL consultato il 28 settembre 2015.

takeda-foundation.jp (Global: low place; Italian: low place)

(EN) GaN-based blue light emitting device development by Akasaki and Amano (PDF), su Takeda Award 2002 Achievement Facts Sheet, The Takeda Foundation, 5 aprile 2002. URL consultato il 3 agosto 2019.

toshiba-machine.co.jp (Global: low place; Italian: low place)

(EN) Development of the Nano-Imprint Equipment ST50S-LED for High-Brightness LED, su toshiba-machine.co.jp, Toshiba Machine, 18 maggio 2011.

unibo.it (Global: 4,963^rd place; Italian: 325^th place)

acnpsearch.unibo.it

(EN) Oleg V. Losev, Luminous carborundum detector and detection effect and oscillations with crystals, in Philosophical Magazine, 7ª serie, vol. 5, n. 39, novembre 1928, pp. 1024-1044, DOI:10.1080/14786441108564683, ISSN 1941-5982 (WC · ACNP).

web.archive.org (Global: 1^st place; Italian: 1^st place)

(EN) N. Zheludev, The life and times of the LED: a 100-year history (PDF), in Nature Photonics, vol. 1, n. 4, 2007, pp. 189-192, Bibcode:2007NaPho...1..189Z, DOI:10.1038/nphoton.2007.34. URL consultato l'11 aprile 2007 (archiviato dall'url originale l'11 maggio 2011).
(EN) Brief history of LEDs (PDF), su iitk.ac.in. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 2 aprile 2019).
(EN) K. Lehovec, C. A. Accardo e E. Jamgochian, Injected Light Emission of Silicon Carbide Crystals, in Physical Review, vol. 83, n. 3, 1951, pp. 603-607, Bibcode:1951PhRv...83..603L, DOI:10.1103/PhysRev.83.603 (archiviato dall'url originale l'11 dicembre 2014).
(EN) Rubin Braunstein, su personnel.physics.ucla.edu, University of California, Los Angeles. URL consultato il 4 agosto 2019 (archiviato dall'url originale l'11 marzo 2011).
(EN) Nick Holonyak Jr. e S. F. Bevacqua, Coherent (Visible) Light Emission from Ga(As_1−x P_x) Junctions, in Applied Physics Letters, vol. 1, n. 4, dicembre 1962, p. 82, Bibcode:1962ApPhL...1...82H, DOI:10.1063/1.1753706 (archiviato dall'url originale il 14 ottobre 2012).
(EN) Howard Wolinsky, U. of I.'s Holonyak out to take some of Edison's luster, Chicago Sun-Times, 5 febbraio 2005. URL consultato il 2 agosto 2019 (archiviato dall'url originale il 28 marzo 2006).
(EN) Brief Biography — Holonyak, Craford, Dupuis (PDF), su technology.gov, Technology Administration. URL consultato il 30 maggio 2007 (archiviato dall'url originale il 9 agosto 2007).
(EN) S. -I. Park, Y. Xiong, R. -H. Kim, P. Elvikis, M. Meitl, D. -H. Kim, J. Wu, J. Yoon, C. -J. Yu, Z. Liu, Y. Huang, K. -C. Hwang, P. Ferreira, X. Li, K. Choquette e J. A. Rogers, Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays (PDF), in Science, vol. 325, n. 5943, 2009, pp. 977-981, Bibcode:2009Sci...325..977P, DOI:10.1126/science.1175690, PMID 19696346 (archiviato dall'url originale il 24 ottobre 2015).
(EN) H. Maruska, A Brief History of GaN Blue Light-Emitting Diodes (PDF), su sslighting.net, LIGHTimes Online – LED Industry News, 2005 (archiviato dall'url originale l'11 giugno 2012).
(EN) Major Business and Product Milestones, su cree.com, Cree Inc.. URL consultato il 3 agosto 2019 (archiviato dall'url originale il 13 aprile 2011).
History & Milestones, su cree.com, Cree Inc.. URL consultato il 3 agosto 2019 (archiviato dall'url originale il 16 febbraio 2017).
(EN) Paul Desruisseaux, 2006 Millennium technology prize awarded to UCSB's Shuji Nakamura, su news.ucsb.edu, Santa Barbara (CA), 15 giugno 2006. URL consultato il 3 agosto 2019 (archiviato dall'url originale il 9 marzo 2020).
(EN) Success in research: First gallium-nitride LED chips on silicon in pilot stage (PDF), su osram-os.de. URL consultato il 15 settembre 2012 (archiviato dall'url originale il 15 settembre 2012).
(EN) Steve Lester, Role of Substrate Choice on LED Packaging (PDF), su apps1.eere.energy.gov, Toshiba America Electronic Components, 2014. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 12 luglio 2014).
(EN) The use of sapphire in mobile device and LED industries: Part 2, su electroiq.com, 26 settembre 2017. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 29 luglio 2018).
(EN) Nick Morris, LED there be light, Nick Morris predicts a bright future for LEDs, su electrooptics.com, 1º giugno 2006. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 23 novembre 2011).
(EN) Cree First to Break 300 Lumens-Per-Watt Barrier, su cree.com, 26 marzo 2014. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 28 luglio 2018).
(EN) LED breakthrough promises ultra efficient luminaires, su luxreview.com, Lux Magazine, 19 gennaio 2018. URL consultato il 4 agosto 2019 (archiviato dall'url originale il 3 agosto 2019).
(EN) Optical Properties of Silicon, su PVCDROM.PVEducation.org (archiviato dall'url originale il 5 giugno 2009).
(EN) Cree Sets New R&D Performance Record with 276 Lumen-Per-Watt Power LED, su cree.com, 10 febbraio 2013. URL consultato il 28 dicembre 2013 (archiviato dall'url originale il 18 gennaio 2014).
Copia archiviata, su eleclight.cn. URL consultato il 30 luglio 2010 (archiviato dall'url originale il 16 febbraio 2010).

webcitation.org (Global: 24^th place; Italian: 48^th place)

(EN) Winners' Circle: Nick Holonyak, Jr, su web.mit.edu. URL consultato il 14 dicembre 2005 (archiviato dall'url originale il 20 gennaio 2013).

worldcat.org (Global: 5^th place; Italian: 26^th place)

(EN) Oleg V. Losev, Luminous carborundum detector and detection effect and oscillations with crystals, in Philosophical Magazine, 7ª serie, vol. 5, n. 39, novembre 1928, pp. 1024-1044, DOI:10.1080/14786441108564683, ISSN 1941-5982 (WC · ACNP).

LED (Italian Wikipedia)

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