Rottura dell'ossido di gate dipendente dal tempo (Italian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Rottura dell'ossido di gate dipendente dal tempo" in Italian language version.

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(EN) J. M. Atkin, R. B. Laibowitz e T. F. Heinz, Effects of photoinduced carrier injection on timedependent dielectric breakdown, in 2009 IEEE International Reliability Physics Symposium, IEEE, 2009, DOI:10.1109/irps.2009.5173365. URL consultato il 6 luglio 2023.
(EN) A. Vici, R. Degraeve e B. Kaczer, A multi-energy level agnostic approach for defect generation during TDDB stress, in Solid-State Electronics, vol. 193, 1º luglio 2022, pp. 108298, DOI:10.1016/j.sse.2022.108298. URL consultato il 9 luglio 2023.
B.N. Aditya e N. Gupta, Material selection methodology for gate dielectric material in metal–oxide–semiconductor devices, in Materials & Design, vol. 35, 2012-03, pp. 696–700, DOI:10.1016/j.matdes.2011.10.015. URL consultato il 9 luglio 2023.
(EN) J.W. McPherson, Time dependent dielectric breakdown physics – Models revisited, in Microelectronics Reliability, vol. 52, n. 9-10, 2012-09, pp. 1753–1760, DOI:10.1016/j.microrel.2012.06.007. URL consultato il 6 luglio 2023.
(EN) J.F. Verweij e J.H. Klootwijk, Dielectric breakdown I: a review of oxide breakdown, in Microelectronics Reliability, vol. 37, n. 8, 1997-08, pp. 1276, DOI:10.1016/s0026-2714(97)82485-7. URL consultato il 6 luglio 2023.
A Fast Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics, in IEEE Electron Device Letters, vol. 35, n. 1, 2014, pp. 117–119, DOI:10.1109/LED.2013.2290538, ISSN 0741-3106 (WC · ACNP).
(EN) A. E.K., M. Griswold e T. L. Alford, A Fast $I{-}V$ Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics, in IEEE Electron Device Letters, vol. 35, n. 1, 2014-01, pp. 117–119, DOI:10.1109/led.2013.2290538. URL consultato il 6 luglio 2023.
(EN) I. Hirano, Y. Nakasaki e S. Fukatsu, Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing, in Microelectronics Reliability, vol. 53, n. 12, 2013-12, pp. 1868–1874, DOI:10.1016/j.microrel.2013.05.010. URL consultato il 6 luglio 2023.

oadoi.org

A Fast Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics, in IEEE Electron Device Letters, vol. 35, n. 1, 2014, pp. 117–119, DOI:10.1109/LED.2013.2290538, ISSN 0741-3106 (WC · ACNP).

sciencedirect.com

(EN) A. Vici, R. Degraeve e B. Kaczer, A multi-energy level agnostic approach for defect generation during TDDB stress, in Solid-State Electronics, vol. 193, 1º luglio 2022, pp. 108298, DOI:10.1016/j.sse.2022.108298. URL consultato il 9 luglio 2023.

unibo.it

acnpsearch.unibo.it

A Fast Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics, in IEEE Electron Device Letters, vol. 35, n. 1, 2014, pp. 117–119, DOI:10.1109/LED.2013.2290538, ISSN 0741-3106 (WC · ACNP).

worldcat.org

A Fast Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics, in IEEE Electron Device Letters, vol. 35, n. 1, 2014, pp. 117–119, DOI:10.1109/LED.2013.2290538, ISSN 0741-3106 (WC · ACNP).