メモリスタ (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "メモリスタ" in Japanese language version.

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Bertin, Eric; Halley, David; Henry, Yves; Najjari, Nabil; Majjad, Hicham; Bowen, Martin; DaCosta, Victor; Arabski, Jacek et al. (2011), “Random barrier double-well model for resistive switching in tunnel barriers”, Journal of Applied Physics 109 (8): 013712–013712–5, Bibcode: 2011JAP...109a3712D, doi:10.1063/1.3530610 2014年12月15日閲覧。

allaboutcircuits.com

“MIT and Ericsson Set Goals for Zero-power Devices and a New Field—"Lithionics" - News”. www.allaboutcircuits.com. Template:Cite webの呼び出しエラー：引数 accessdate は必須です。

archives-ouvertes.fr

hal.archives-ouvertes.fr

arstechnica.com

Gutmann, E. (1 May 2008), “Maintaining Moore's law with new memristor circuits”, Ars Technica 2008年5月1日閲覧。

arxiv.org

Pershin, Y. V.; Di Ventra, M. (2019). “A simple test for ideal memristors”. Journal of Physics D: Applied Physics 52 (1): 01LT01. arXiv:1806.07360. Bibcode: 2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). “An experimental proof that resistance-switching memories are not memristors”. Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010.
Peotta, A.; Di Ventra, M. (2014), “Superconducting Memristors”, Physical Review Applied 2 (3): 034011-1-034011-10, arXiv:1311.2975, Bibcode: 2014PhRvP...2c4011P, doi:10.1103/PhysRevApplied.2.034011
Meuffels, P.; Soni, R. (2012). "Fundamental Issues and Problems in the Realization of Memristors". arXiv:1207.7319 [cond-mat.mes-hall]。
Di Ventra, M.; Pershin, Y. V. (2013), “On the physical properties of memristive, memcapacitive and meminductive systems”, Nanotechnology 24 (25): 255201, arXiv:1302.7063, Bibcode: 2013Nanot..24y5201D, doi:10.1088/0957-4484/24/25/255201, PMID 23708238
Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B. (21 November 2017). “Memristor Equations: Incomplete Physics and Undefined Passivity/Activity”. Fluctuation and Noise Letters 16 (4): 1771001–519. arXiv:1703.09064. Bibcode: 2017FNL....1671001S. doi:10.1142/S0219477517710018.
Valov, I. (2013), “Nanobatteries in redox-based resistive switches require extension of memristor theory”, Nature Communications 4 (4): 1771, arXiv:1303.2589, Bibcode: 2013NatCo...4.1771V, doi:10.1038/ncomms2784, PMC 3644102, PMID 23612312
Pershin, Y. V.; Di Ventra, M. (2019). “A simple test for ideal memristors”. Journal of Physics D: Applied Physics 52 (1): 01LT01. arXiv:1806.07360. Bibcode: 2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). “An experimental proof that resistance-switching memories are not memristors”. Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010.
Meuffels, P.; Soni, R. (2012). "Fundamental Issues and Problems in the Realization of Memristors". arXiv:1207.7319 [cond-mat.mes-hall]。
Di Ventra, M.; Pershin, Y. V. (2013), “On the physical properties of memristive, memcapacitive and meminductive systems”, Nanotechnology 24 (25): 255201, arXiv:1302.7063, Bibcode: 2013Nanot..24y5201D, doi:10.1088/0957-4484/24/25/255201, PMID 23708238
Kish, Laszlo B.; Granqvist, Claes G.; Khatri, Sunil P.; Wen, He (2014). “Demons: Maxwell's demon, Szilard's engine and Landauer's erasure–dissipation”. International Journal of Modern Physics: Conference Series 33: 1460364. arXiv:1412.2166. Bibcode: 2014IJMPS..3360364K. doi:10.1142/s2010194514603640.
Slipko, V. A.; Pershin, Y. V.; Di Ventra, M. (2013), “Changing the state of a memristive system with white noise”, Physical Review E 87 (1): 042103, arXiv:1209.4103, Bibcode: 2013PhRvE..87a2103L, doi:10.1103/PhysRevE.87.012103, PMID 23410279
Linn, E.; Siemon, A.; Waser, R.; Menzel, S. (23 March 2014). “Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices”. IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8): 2402–2410. arXiv:1403.5801. Bibcode: 2014arXiv1403.5801L. doi:10.1109/TCSI.2014.2332261.
Pershin, Y. V.; Di Ventra, M. (2011), “Memory effects in complex materials and nanoscale systems”, Advances in Physics 60 (2): 145–227, arXiv:1011.3053, Bibcode: 2011AdPhy..60..145P, doi:10.1080/00018732.2010.544961
Caravelli (2017). “The complex dynamics of memristive circuits: analytical results and universal slow relaxation”. Physical Review E 95 (2): 022140. arXiv:1608.08651. Bibcode: 2017PhRvE..95b2140C. doi:10.1103/PhysRevE.95.022140. PMID 28297937.
Caravelli (2021). “Global minimization via classical tunnelling assisted by collective force field formation”. Science Advances 7 (52): 022140. arXiv:1608.08651. Bibcode: 2021SciA....7.1542C. doi:10.1126/sciadv.abh1542. PMID 28297937.
Mouttet, B. (2012). "Memresistors and non-memristive zero-crossing hysteresis curves". arXiv:1201.2626 [cond-mat.mes-hall]。
Kavehei, O.; Iqbal, A.; Kim, Y.S.; Eshraghian, K.; Al-Sarawi, S. F.; Abbott, D. (2010). “The fourth element: characteristics, modelling and electromagnetic theory of the memristor”. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 466 (2120): 2175–2202. arXiv:1002.3210. Bibcode: 2010RSPSA.466.2175K. doi:10.1098/rspa.2009.0553.
Erokhin, V.; Fontana, M. P. (2008). "Electrochemically controlled polymeric device: A memristor (and more) found two years ago". arXiv:0807.0333 [cond-mat.soft]。
An; Alibart, F.; Pleutin, S.; Guerin, D.; Novembre, C.; Lenfant, S.; Lmimouni, K.; Gamrat, C. et al. (2010). “An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse”. Advanced Functional Materials 20 (2): 330–337. arXiv:0907.2540. doi:10.1002/adfm.200901335.
Alibart, F.; Pleutin, S.; Bichler, O.; Gamrat, C.; Serrano-Gotarredona, T.; Linares-Barranco, B.; Vuillaume, D. (2012). “A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing”. Advanced Functional Materials 22 (3): 609–616. arXiv:1112.3138. doi:10.1002/adfm.201101935. hdl:10261/83537.
Pavlov's; Transistors, Organic; Bichler, O.; Zhao, W.; Alibart, F.; Pleutin, S.; Lenfant, S.; Vuillaume, D. et al. (2013). “Pavlov's Dog Associative Learning Demonstrated on Synaptic-Like Organic Transistors”. Neural Computation 25 (2): 549–566. arXiv:1302.3261. Bibcode: 2013arXiv1302.3261B. doi:10.1162/NECO_a_00377. PMID 22970878.
Chanthbouala, A. (2012), “A ferroelectric memristor”, Nature Materials 11 (10): 860–864, arXiv:1206.3397, Bibcode: 2012NatMa..11..860C, doi:10.1038/nmat3415, PMID 22983431
Chanthbouala, A.; Matsumoto, R.; Grollier, J.; Cros, V.; Anane, A.; Fert, A.; Khvalkovskiy, A. V.; Zvezdin, K. A. et al. (10 April 2011). “Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities”. Nature Physics 7 (8): 626–630. arXiv:1102.2106. Bibcode: 2011NatPh...7..626C. doi:10.1038/nphys1968.
Krzysteczko, P.; Günter, R.; Thomas, A. (2009), “Memristive switching of MgO based magnetic tunnel junctions”, Applied Physics Letters 95 (11): 112508, arXiv:0907.3684, Bibcode: 2009ApPhL..95k2508K, doi:10.1063/1.3224193
Pershin, Y. V.; Di Ventra, M. (2008), “Spin memristive systems: Spin memory effects in semiconductor spintronics”, Physical Review B 78 (11): 113309, arXiv:0806.2151, Bibcode: 2008PhRvB..78k3309P, doi:10.1103/PhysRevB.78.113309
Pershin, Y. V.; Di Ventra, M. (2008), “Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime”, Physical Review B 77 (7): 073301, arXiv:0707.4475, Bibcode: 2008PhRvB..77g3301P, doi:10.1103/PhysRevB.77.073301
Campbell, K. (January 2017), “Self-directed channel memristor for high temperature operation”, Microelectronics Journal 59: 10–14, arXiv:1608.05357, doi:10.1016/j.mejo.2016.11.006
Pershin, Y. V.; La Fontaine, S.; Di Ventra, M. (2009), “Memristive model of amoeba learning”, Physical Review E 80 (2): 021926, arXiv:0810.4179, Bibcode: 2009PhRvE..80b1926P, doi:10.1103/PhysRevE.80.021926, PMID 19792170
Merrikh-Bayat, F.; Bagheri-Shouraki, S.; Rohani, A. (2011), “Memristor crossbar-based hardware implementation of IDS method”, IEEE Transactions on Fuzzy Systems 19 (6): 1083–1096, arXiv:1008.5133, doi:10.1109/TFUZZ.2011.2160024
Merrikh-Bayat, F.; Bagheri-Shouraki, S. (2011). "Efficient neuro-fuzzy system and its Memristor Crossbar-based Hardware Implementation". arXiv:1103.1156 [cs.AI]。
Di Ventra, M.; Pershin, Y. V.; Chua, L. (2009), “Circuit elements with memory: memristors, memcapacitors and meminductors”, Proceedings of the IEEE 97 (10): 1717–1724, arXiv:0901.3682, Bibcode: 2009arXiv0901.3682D, doi:10.1109/JPROC.2009.2021077

bbc.co.uk

news.bbc.co.uk

Fildes, J. (13 November 2007), Getting More from Moore's Law, BBC News 2008年4月30日閲覧。

bbc.co.uk

Palmer, J. (18 May 2012), “Memristors in silicon promising for dense, fast memory”, BBC News 2012年5月18日閲覧。

cnet.com

news.cnet.com

Kanellos, M. (30 April 2008), “HP makes memory from a once theoretical circuit”, CNET News 2008年4月30日閲覧。

doi.org

Chua, L. (1971). “Memristor-The missing circuit element”. IEEE Transactions on Circuit Theory 18 (5): 507–519. doi:10.1109/TCT.1971.1083337.
Chua, L. O.; Kang, S. M. (1 January 1976), “Memristive devices and systems”, Proceedings of the IEEE 64 (2): 209–223, doi:10.1109/PROC.1976.10092
Pershin, Y. V.; Di Ventra, M. (2019). “A simple test for ideal memristors”. Journal of Physics D: Applied Physics 52 (1): 01LT01. arXiv:1806.07360. Bibcode: 2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). “An experimental proof that resistance-switching memories are not memristors”. Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010.
Chua, L. (1971). “Memristor-The missing circuit element”. IEEE Transactions on Circuit Theory 18 (5): 507–519. doi:10.1109/TCT.1971.1083337.
Langenberg, D. N. (1974), “Physical Interpretation of the $\cos \phi$ term and implications for detectors”, Revue de Physique Appliquée 9: 35–40, doi:10.1051/rphysap:019740090103500
Pedersen, N.F. (1972), “Magnetic field dependence and Q of the Josephson plasma resonance”, Physical Review B 11 (6): 4151–4159, Bibcode: 1972PhRvB...6.4151P, doi:10.1103/PhysRevB.6.4151
Pedersen, N. F.; Finnegan, T. F.; Langenberg, D. N. (1974). “Evidence for the Existence of the Josephson Quasiparticle-Pair Interference Current”. Low Temperature Physics-LT 13. Boston, MA: Springer US. pp. 268–271. doi:10.1007/978-1-4684-2688-5_52. ISBN 978-1-4684-2690-8
Thompson, E.D. (1973), “Power flow for Josephson Elements”, IEEE Trans. Electron Devices 20 (8): 680–683, Bibcode: 1973ITED...20..680T, doi:10.1109/T-ED.1973.17728
Peotta, A.; Di Ventra, M. (2014), “Superconducting Memristors”, Physical Review Applied 2 (3): 034011-1-034011-10, arXiv:1311.2975, Bibcode: 2014PhRvP...2c4011P, doi:10.1103/PhysRevApplied.2.034011
Muthuswamy, B.; Jevtic, J.; Iu, H. H. C.; Subramaniam, C. K.; Ganesan, K.; Sankaranarayanan, V.; Sethupathi, K.; Kim, H. et al. (2014). “Memristor modelling”. 2014 IEEE International Symposium on Circuits and Systems (ISCAS). pp. 490–493. doi:10.1109/ISCAS.2014.6865179. ISBN 978-1-4799-3432-4
Chua, L. O.; Tseng, C. (1974), “A memristive circuit model for p-n junction diodes”, International Journal of Circuit Theory and Applications 2 (4): 367–389, doi:10.1002/cta.4490020406
Chua, Leon (28 January 2011). “Resistance switching memories are memristors”. Applied Physics A 102 (4): 765–783. Bibcode: 2011ApPhA.102..765C. doi:10.1007/s00339-011-6264-9.
Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.; Williams, R. Stanley (2008). “The missing memristor found”. Nature 453 (7191): 80–83. Bibcode: 2008Natur.453...80S. doi:10.1038/nature06932. PMID 18451858.
Williams, R. S. (2008). “How We Found The Missing Memristor”. IEEE Spectrum 45 (12): 28–35. doi:10.1109/MSPEC.2008.4687366. オリジナルの2018-03-26時点におけるアーカイブ。 2018年3月26日閲覧。.
Di Ventra, M.; Pershin, Y. V. (2013), “On the physical properties of memristive, memcapacitive and meminductive systems”, Nanotechnology 24 (25): 255201, arXiv:1302.7063, Bibcode: 2013Nanot..24y5201D, doi:10.1088/0957-4484/24/25/255201, PMID 23708238
Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B. (21 November 2017). “Memristor Equations: Incomplete Physics and Undefined Passivity/Activity”. Fluctuation and Noise Letters 16 (4): 1771001–519. arXiv:1703.09064. Bibcode: 2017FNL....1671001S. doi:10.1142/S0219477517710018.
Abraham, Isaac (2018-07-20). “The case for rejecting the memristor as a fundamental circuit element”. Scientific Reports 8 (1): 10972. Bibcode: 2018NatSR...810972A. doi:10.1038/s41598-018-29394-7. PMC 6054652. PMID 30030498.
Valov, I. (2013), “Nanobatteries in redox-based resistive switches require extension of memristor theory”, Nature Communications 4 (4): 1771, arXiv:1303.2589, Bibcode: 2013NatCo...4.1771V, doi:10.1038/ncomms2784, PMC 3644102, PMID 23612312
Pershin, Y. V.; Di Ventra, M. (2019). “A simple test for ideal memristors”. Journal of Physics D: Applied Physics 52 (1): 01LT01. arXiv:1806.07360. Bibcode: 2019JPhD...52aLT01P. doi:10.1088/1361-6463/aae680.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (2019). “An experimental proof that resistance-switching memories are not memristors”. Advanced Electronic Materials. arXiv:1909.07238. doi:10.1002/aelm.202000010.
Zidan, Mohammed A.; Strachan, John Paul; Lu, Wei D. (2018-01-08). “The future of electronics based on memristive systems”. Nature Electronics 1 (1): 22–29. doi:10.1038/s41928-017-0006-8.
Johnsen, G. K. (24 March 2011). “Memristive model of electro-osmosis in skin”. Physical Review E 83 (3): 031916. Bibcode: 2011PhRvE..83c1916J. doi:10.1103/PhysRevE.83.031916. PMID 21517534.
McAlpine, K. (2 March 2011), “Sweat ducts make skin a memristor”, New Scientist 209 (2802): 16, Bibcode: 2011NewSc.209...16M, doi:10.1016/S0262-4079(11)60481-8 2012年3月7日閲覧。
Meuffels, P.; Schroeder, H. (2011), “Comment on "Exponential ionic drift: fast switching and low volatility of thin-film memristors" by D. B. Strukov and R. S. Williams in Appl. Phys. A (2009) 94: 515–519”, Applied Physics A 105 (1): 65–67, Bibcode: 2011ApPhA.105...65M, doi:10.1007/s00339-011-6578-7
Di Ventra, M.; Pershin, Y. V. (2013), “On the physical properties of memristive, memcapacitive and meminductive systems”, Nanotechnology 24 (25): 255201, arXiv:1302.7063, Bibcode: 2013Nanot..24y5201D, doi:10.1088/0957-4484/24/25/255201, PMID 23708238
Kish, Laszlo B.; Granqvist, Claes G.; Khatri, Sunil P.; Wen, He (2014). “Demons: Maxwell's demon, Szilard's engine and Landauer's erasure–dissipation”. International Journal of Modern Physics: Conference Series 33: 1460364. arXiv:1412.2166. Bibcode: 2014IJMPS..3360364K. doi:10.1142/s2010194514603640.
Kish, L. B.; Khatri, S. P.; Granqvist, C. G.; Smulko, J. M. (2015). “Critical remarks on Landauer's principle of erasure-dissipation: Including notes on Maxwell demons and Szilard engines”. 2015 International Conference on Noise and Fluctuations (ICNF). pp. 1–4. doi:10.1109/ICNF.2015.7288632. ISBN 978-1-4673-8335-6
Slipko, V. A.; Pershin, Y. V.; Di Ventra, M. (2013), “Changing the state of a memristive system with white noise”, Physical Review E 87 (1): 042103, arXiv:1209.4103, Bibcode: 2013PhRvE..87a2103L, doi:10.1103/PhysRevE.87.012103, PMID 23410279
Hashem, N.; Das, S. (2012), “Switching-time analysis of binary-oxide memristors via a non-linear model”, Applied Physics Letters 100 (26): 262106, Bibcode: 2012ApPhL.100z2106H, doi:10.1063/1.4726421 2012年8月9日閲覧。 ^{[リンク切れ]}
Linn, E.; Siemon, A.; Waser, R.; Menzel, S. (23 March 2014). “Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices”. IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8): 2402–2410. arXiv:1403.5801. Bibcode: 2014arXiv1403.5801L. doi:10.1109/TCSI.2014.2332261.
Adhikari, S. P.; Sah, M. P.; Hyongsuk, K.; Chua, L. O. (2013), “Three Fingerprints of Memristor”, IEEE Transactions on Circuits and Systems I 60 (11): 3008–3021, doi:10.1109/TCSI.2013.2256171
Pershin, Y. V.; Di Ventra, M. (2011), “Memory effects in complex materials and nanoscale systems”, Advances in Physics 60 (2): 145–227, arXiv:1011.3053, Bibcode: 2011AdPhy..60..145P, doi:10.1080/00018732.2010.544961
Biolek, D.; Biolek, Z.; Biolkova, V. (2011), “Pinched hysteresis loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'”, Electronics Letters 47 (25): 1385–1387, Bibcode: 2011ElL....47.1385B, doi:10.1049/el.2011.2913
Caravelli (2017). “The complex dynamics of memristive circuits: analytical results and universal slow relaxation”. Physical Review E 95 (2): 022140. arXiv:1608.08651. Bibcode: 2017PhRvE..95b2140C. doi:10.1103/PhysRevE.95.022140. PMID 28297937.
Caravelli (2021). “Global minimization via classical tunnelling assisted by collective force field formation”. Science Advances 7 (52): 022140. arXiv:1608.08651. Bibcode: 2021SciA....7.1542C. doi:10.1126/sciadv.abh1542. PMID 28297937.
Argall, F. (1968), “Switching Phenomena in Titanium Oxide Thin Films”, Solid-State Electronics 11 (5): 535–541, Bibcode: 1968SSEle..11..535A, doi:10.1016/0038-1101(68)90092-0
。 Terabe, K.; Hasegawa, T.; Liang, C.; Aono, M. (2007), “Control of local ion transport to create unique functional nanodevices based on ionic conductors”, Science and Technology of Advanced Materials 8 (6): 536–542, Bibcode: 2007STAdM...8..536T, doi:10.1016/j.stam.2007.08.002
Beck, A. (2000), “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters 77 (1): 139, Bibcode: 2000ApPhL..77..139B, doi:10.1063/1.126902
Kavehei, O.; Iqbal, A.; Kim, Y.S.; Eshraghian, K.; Al-Sarawi, S. F.; Abbott, D. (2010). “The fourth element: characteristics, modelling and electromagnetic theory of the memristor”. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 466 (2120): 2175–2202. arXiv:1002.3210. Bibcode: 2010RSPSA.466.2175K. doi:10.1098/rspa.2009.0553.
Mehonic, A.; Cueff, S.; Wojdak, M. , …; Kenyon, A. J. (2012). “Resistive switching in silicon suboxide films”. Journal of Applied Physics 111 (7): 074507–074507–9. Bibcode: 2012JAP...111g4507M. doi:10.1063/1.3701581.
Krieger, J. H.; Spitzer, S. M. (2004), “Non-traditional, Non-volatile Memory Based on Switching and Retention Phenomena in Polymeric Thin Films”, Proceedings of the 2004 Non-Volatile Memory Technology Symposium, IEEE, p. 121, doi:10.1109/NVMT.2004.1380823, ISBN 978-0-7803-8726-3
An; Alibart, F.; Pleutin, S.; Guerin, D.; Novembre, C.; Lenfant, S.; Lmimouni, K.; Gamrat, C. et al. (2010). “An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse”. Advanced Functional Materials 20 (2): 330–337. arXiv:0907.2540. doi:10.1002/adfm.200901335.
Alibart, F.; Pleutin, S.; Bichler, O.; Gamrat, C.; Serrano-Gotarredona, T.; Linares-Barranco, B.; Vuillaume, D. (2012). “A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing”. Advanced Functional Materials 22 (3): 609–616. arXiv:1112.3138. doi:10.1002/adfm.201101935. hdl:10261/83537.
Pavlov's; Transistors, Organic; Bichler, O.; Zhao, W.; Alibart, F.; Pleutin, S.; Lenfant, S.; Vuillaume, D. et al. (2013). “Pavlov's Dog Associative Learning Demonstrated on Synaptic-Like Organic Transistors”. Neural Computation 25 (2): 549–566. arXiv:1302.3261. Bibcode: 2013arXiv1302.3261B. doi:10.1162/NECO_a_00377. PMID 22970878.
Erokhin, V.; Berzina, T.; Gorshkov, K.; Camorani, P.; Pucci, A.; Ricci, L.; Ruggeri, G.; Signala, R. et al. (2012). “Stochastic hybrid 3D matrix: learning and adaptation of electrical properties”. Journal of Materials Chemistry 22 (43): 22881. doi:10.1039/C2JM35064E.
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