ウルトラRAM (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "ウルトラRAM" in Japanese language version.

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doi.org

  • Hodgson, Peter D.; Lane, Dominic; Carrington, Peter J.; Delli, Evangelia; Beanland, Richard; Hayne, Manus (2022-01-05). “ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon” (英語). Advanced Electronic Materials 8 (4): 2101103. doi:10.1002/aelm.202101103. ISSN 2199-160X. https://onlinelibrary.wiley.com/doi/10.1002/aelm.202101103. 
  • Chang, S. W.; Li, Xu; Oxland, R.; Wang, S. W.; Wang, C. H.; Contreras-Guerrero, R.; Bhuwalka, K. K.; Doornbos, G. et al. (30 January 2014). “InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)”. 2013 IEEE International Electron Devices Meeting. pp. 16.1.1–16.1.4. doi:10.1109/IEDM.2013.6724639. ISBN 978-1-4799-2306-9. https://ieeexplore.ieee.org/document/6724639 

ieee.org

ieeexplore.ieee.org

kalkinemedia.com

pcworld.com

sciencedaily.com

tomshardware.com

wiley.com

onlinelibrary.wiley.com

  • Hodgson, Peter D.; Lane, Dominic; Carrington, Peter J.; Delli, Evangelia; Beanland, Richard; Hayne, Manus (2022-01-05). “ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon” (英語). Advanced Electronic Materials 8 (4): 2101103. doi:10.1002/aelm.202101103. ISSN 2199-160X. https://onlinelibrary.wiley.com/doi/10.1002/aelm.202101103. 

worldcat.org

search.worldcat.org

  • Hodgson, Peter D.; Lane, Dominic; Carrington, Peter J.; Delli, Evangelia; Beanland, Richard; Hayne, Manus (2022-01-05). “ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon” (英語). Advanced Electronic Materials 8 (4): 2101103. doi:10.1002/aelm.202101103. ISSN 2199-160X. https://onlinelibrary.wiley.com/doi/10.1002/aelm.202101103. 

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