酸化ハフニウム(IV) (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "酸化ハフニウム(IV)" in Japanese language version.

refsWebsite

Global rank Japanese rank

2^nd place

6^th place

774^th place

1,286^th place

7^th place

63^rd place

low place

doi.org

Byoung Hun Lee, Laegu Kang, Renee Nieh, Wen-Jie Qi, and Jack C. Lee (2000), “Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing”, Appl. Phys. Lett. 76 (14): pp. 1926 doi:10.1063/1.126214
Kingsuk Maitra, Martin M. Frank, Vijay Narayanan, Veena Misra, and Eduard A. Cartier (2007), “Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal–oxide–semiconductor field effect transistors–low temperature electron mobility study”, J. Appl. Phys. 102 (11): pp. 114507 doi:10.1063/1.2821712
G. D. Wilk, R. M. Wallace, and J. M. Anthony (2001), “High-κ gate dielectrics: Current status and materials properties considerations”, J. Appl. Phys. 89 (10): pp. 5243 doi:10.1063/1.1361065

Nanotube memory flashes past silicon NewScientist, Article written 05 February 2009 by David Robson 最終更新確認: 2010-10-31（英語）

Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., 最終更新確認: 2010-10-31（英語）