金属半導体接合 (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "金属半導体接合" in Japanese language version.

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books.google.com

Bardeen, J. (1947). “Surface States and Rectification at a Metal Semi-Conductor Contact”. Physical Review 71 (10): 717. Bibcode: 1947PhRv...71..717B. doi:10.1103/PhysRev.71.717.
Tung, R. (2001). “Formation of an electric dipole at metal-semiconductor interfaces”. Physical Review B 64 (20). Bibcode: 2001PhRvB..64t5310T. doi:10.1103/PhysRevB.64.205310.
Nishimura, T.; Kita, K.; Toriumi, A. (2007). “Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface”. Applied Physics Letters 91 (12): 123123. Bibcode: 2007ApPhL..91l3123N. doi:10.1063/1.2789701.
Lieten, R. R.; Degroote, S.; Kuijk, M.; Borghs, G. (2008). “Ohmic contact formation on n-type Ge”. Applied Physics Letters 92 (2): 022106. Bibcode: 2008ApPhL..92b2106L. doi:10.1063/1.2831918. https://zenodo.org/record/897811.
Braun, F. (1874), “Ueber die Stromleitung durch Schwefelmetalle” (German), Annalen der Physik und Chemie 153 (4): 556–563, Bibcode: 1875AnP...229..556B, doi:10.1002/andp.18752291207
Pierce, G. W. (1907). “Crystal Rectifiers for Electric Currents and Electric Oscillations. Part I. Carborundum”. Physical Review. Series I 25: 31. Bibcode: 1907PhRvI..25...31P. doi:10.1103/PhysRevSeriesI.25.31.
S. Arscott and M. Gaudet "Electrowetting at a liquid metal-semiconductor junction" Appl. Phys. Lett. 103, 074104 (2013). doi:10.1063/1.4818715
S. Arscott "Electrowetting and semiconductors" RSC Advances 4, 29223 (2014). doi:10.1039/C4RA04187A

US 1745175 "Method and apparatus for controlling electric current" first filed in Canada on 22.10.1925.
US 755840, Bose, Jagadis Chunder, "Detector for electrical disturbances", published September 30, 1901, issued March 29, 1904

Bardeen, J. (1947). “Surface States and Rectification at a Metal Semi-Conductor Contact”. Physical Review 71 (10): 717. Bibcode: 1947PhRv...71..717B. doi:10.1103/PhysRev.71.717.
Tung, R. (2001). “Formation of an electric dipole at metal-semiconductor interfaces”. Physical Review B 64 (20). Bibcode: 2001PhRvB..64t5310T. doi:10.1103/PhysRevB.64.205310.
Nishimura, T.; Kita, K.; Toriumi, A. (2007). “Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface”. Applied Physics Letters 91 (12): 123123. Bibcode: 2007ApPhL..91l3123N. doi:10.1063/1.2789701.
Lieten, R. R.; Degroote, S.; Kuijk, M.; Borghs, G. (2008). “Ohmic contact formation on n-type Ge”. Applied Physics Letters 92 (2): 022106. Bibcode: 2008ApPhL..92b2106L. doi:10.1063/1.2831918. https://zenodo.org/record/897811.
Braun, F. (1874), “Ueber die Stromleitung durch Schwefelmetalle” (German), Annalen der Physik und Chemie 153 (4): 556–563, Bibcode: 1875AnP...229..556B, doi:10.1002/andp.18752291207
Pierce, G. W. (1907). “Crystal Rectifiers for Electric Currents and Electric Oscillations. Part I. Carborundum”. Physical Review. Series I 25: 31. Bibcode: 1907PhRvI..25...31P. doi:10.1103/PhysRevSeriesI.25.31.