高電子移動度トランジスタ (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "高電子移動度トランジスタ" in Japanese language version.

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doi.org

Kim, Dae-Hyun; del Alamo, JesÚs A. (2008-08). “30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz”. IEEE Electron Device Letters 29 (8): 830–833. doi:10.1109/LED.2008.2000794. ISSN 0741-3106.

ieee-jp.org

IEEE 東京支部「IEEE MILESTONE (35) 高電子移動度トランジスタ HEMT、1979年」2020年4月9日閲覧

ieee.org

ieeexplore.ieee.org

Kim, Dae-Hyun; del Alamo, JesÚs A. (2008-08). “30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz”. IEEE Electron Device Letters 29 (8): 830–833. doi:10.1109/LED.2008.2000794. ISSN 0741-3106.

worldcat.org

search.worldcat.org

Kim, Dae-Hyun; del Alamo, JesÚs A. (2008-08). “30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz”. IEEE Electron Device Letters 29 (8): 830–833. doi:10.1109/LED.2008.2000794. ISSN 0741-3106.