A.B Sproul, M.A Green (1991). “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”. 《J. Appl. Phys.》 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
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A.B Sproul, M.A Green (1991). “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”. 《J. Appl. Phys.》 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
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John R Woodyard "Nonlinear circuit device utilizing germanium" 미국 특허 2,530,110 filed, 1944, granted 1950
Sparks, Morgan and Teal, Gordon K. "Method of Making P-N Junctions in Semiconductor Materials", 미국 특허 2,631,356 (Filed June 15, 1950. Issued March 17, 1953)
John R Woodyard "Nonlinear circuit device utilizing germanium" 미국 특허 2,530,110 filed, 1944, granted 1950
Sparks, Morgan and Teal, Gordon K. "Method of Making P-N Junctions in Semiconductor Materials", 미국 특허 2,631,356 (Filed June 15, 1950. Issued March 17, 1953)