PRAM (Korean Wikipedia)

Analysis of information sources in references of the Wikipedia article "PRAM" in Korean language version.

Last modified: 18:49:28, 17 September 2026 (UTC)

Ref.Un. Ref.Website

Global rank Korean rank

1919doi.org

2^nd place

3^rd place

1515adsabs.harvard.edu

14^th place

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1313semanticscholar.org

15^th place

11^th place

1211web.archive.org

1^st place

55worldcat.org

4^th place

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44nih.gov

5^th place

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33arxiv.org

49^th place

28^th place

33samsung.com

2,692^nd place

258^th place

32numonyx.com

low place

31technologyreview.com

2,515^th place

874^th place

22ieee.org

912^th place

312^th place

22theregister.co.uk

1,877^th place

608^th place

22engadget.com

613^th place

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22micron.com

low place

5,883^rd place

22extremetech.com

6,470^th place

1,526^th place

11psu.edu

299^th place

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11iastate.edu

2,388^th place

2,106^th place

11youtube.com

13^th place

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11objective-analysis.com

low place

11techworld.com

low place

11kurzweilai.net

low place

6,847^th place

11dailytech.com

low place

4,131^st place

11eweek.com

8,041^st place

2,615^th place

11skhynix.com

low place

3,990^th place

11eetimes.com

4,224^th place

1,003^rd place

11st.com

low place

5,660^th place

11nature.com

207^th place

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11techtree.com

low place

11computerworld.com

3,446^th place

1,002^nd place

11eetimessupplynetwork.com

low place

11intel.com

1,727^th place

396^th place

11miracd.com

low place

adsabs.harvard.edu (Global: 14^th place; Korean: 8^th place)

Le Gallo, Manuel; Sebastian, Abu (2020년 3월 30일). 《An overview of phase-change memory device physics》 (영어). 《Journal of Physics D: Applied Physics》 53. 213002쪽. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). 《Recent Progress in Phase-Change Memory Technology》. 《IEEE Journal on Emerging and Selected Topics in Circuits and Systems》 6. 146–162쪽. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya 외 (July 2011). 《Interfacial phase-change memory》. 《Nature Nanotechnology》 6. 501–5쪽. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Chua, L. O. (2011), “Resistance switching memories are memristors”, 《Applied Physics A》 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Pohm, A.; Sie, C.; Uttecht, R.; Kao, V.; Agrawal, O. (1970). 《Chalcogenide glass bistable resistivity (Ovonic) memories》. 《IEEE Transactions on Magnetics》 6. 592쪽. Bibcode:1970ITM.....6..592P. doi:10.1109/TMAG.1970.1066920.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). 《Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials》. 《Applied Physics Letters》 91. 171906쪽. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
Zhou, X.; Wu, L.; Song, Z.; Rao, F.; Ren, K.; Peng, C.; Song, S.; Liu, B.; Xu, L.; Feng, S. (2013). 《Phase transition characteristics of Al-Sb phase change materials for phase change memory application》. 《Applied Physics Letters》 103. 072114쪽. Bibcode:2013ApPhL.103g2114Z. doi:10.1063/1.4818662.
Simpson, R. E. (2010). 《Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅》. 《Nano Letters》 10. 414–9쪽. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). 《Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element》. 《IEEE Transactions on Electron Devices》 62. 3498–3507쪽. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). 《Memory devices and applications for in-memory computing》 (영어). 《Nature Nanotechnology》 15. 529–544쪽. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). 《HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs》. 《IEEE Journal of Solid-State Circuits》 57. 1027–1038쪽. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.
Karpov, I.V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y.A.; Karpov, V.G. (2007). 《Fundamental drift of parameters in chalcogenide phase change memory》. 《J. Appl. Phys.》 102. 124503–124503–6쪽. Bibcode:2007JAP...102l4503K. doi:10.1063/1.2825650.
Kolomiets, B. T. (1964). 《Vitreous Semiconductors (I)》. 《Physica Status Solidi B》 7. 359–372쪽. Bibcode:1964PSSBR...7..359K. doi:10.1002/pssb.19640070202. S2CID 222432031.
Kolomiets, B. T. (1964). 《Vitreous Semiconductors (II)》. 《Physica Status Solidi B》 7. 713–731쪽. Bibcode:1964PSSBR...7..713K. doi:10.1002/pssb.19640070302.

arxiv.org (Global: 49^th place; Korean: 28^th place)

Meuffels, P.; Soni, R. (2012). “Fundamental Issues and Problems in the Realization of Memristors”. arXiv:1207.7319.
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). 《Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials》. 《Applied Physics Letters》 91. 171906쪽. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.

computerworld.com (Global: 3,446^th place; Korean: 1,002^nd place)

“IT news, careers, business technology, reviews”. 《Computerworld》.

dailytech.com (Global: low place; Korean: 4,131^st place)

“Intel to Sample Phase Change Memory This Year”. 2007년 3월 23일에 원본 문서에서 보존된 문서. 2007년 6월 30일에 확인함.

doi.org (Global: 2^nd place; Korean: 3^rd place)

dx.doi.org

Le Gallo, Manuel; Sebastian, Abu (2020년 3월 30일). 《An overview of phase-change memory device physics》 (영어). 《Journal of Physics D: Applied Physics》 53. 213002쪽. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). 《Recent Progress in Phase-Change Memory Technology》. 《IEEE Journal on Emerging and Selected Topics in Circuits and Systems》 6. 146–162쪽. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya 외 (July 2011). 《Interfacial phase-change memory》. 《Nature Nanotechnology》 6. 501–5쪽. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Chua, L. O. (2011), “Resistance switching memories are memristors”, 《Applied Physics A》 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Pohm, A.; Sie, C.; Uttecht, R.; Kao, V.; Agrawal, O. (1970). 《Chalcogenide glass bistable resistivity (Ovonic) memories》. 《IEEE Transactions on Magnetics》 6. 592쪽. Bibcode:1970ITM.....6..592P. doi:10.1109/TMAG.1970.1066920.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). 《Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials》. 《Applied Physics Letters》 91. 171906쪽. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
Horii, H. 외 (2003). 〈A novel cell technology using N-doped GeSbTe films for phase change RAM〉. 《2003 Symposium on VLSI Technology. Digest of Technical Papers》. 177–8쪽. doi:10.1109/VLSIT.2003.1221143. ISBN 4-89114-033-X. S2CID 40051862. 03CH37407.
Zhou, X.; Wu, L.; Song, Z.; Rao, F.; Ren, K.; Peng, C.; Song, S.; Liu, B.; Xu, L.; Feng, S. (2013). 《Phase transition characteristics of Al-Sb phase change materials for phase change memory application》. 《Applied Physics Letters》 103. 072114쪽. Bibcode:2013ApPhL.103g2114Z. doi:10.1063/1.4818662.
Simpson, R. E. (2010). 《Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅》. 《Nano Letters》 10. 414–9쪽. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Pirovano, A.; Redaelli, A.; Pellizzer, F.; Ottogalli, F.; Tosi, M.; Ielmini, D.; Lacaita, A.L.; Bez, R. (2004). 《Reliability study of phase-change nonvolatile memories》. 《IEEE Transactions on Device and Materials Reliability》 4. 422–7쪽. doi:10.1109/TDMR.2004.836724. S2CID 22178768.
Karpov, I.V.; Kencke, D.; Kau, D.; Tang, S.; Spadini, G. (2010). 〈Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties〉. 《Symposium G – Materials and Physics for Nonvolatile Memories II》. MRS Proceedings 1250. Cambridge University Press. G14–01–H07–01쪽. doi:10.1557/PROC-1250-G14-01-H07-01.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). 《Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element》. 《IEEE Transactions on Electron Devices》 62. 3498–3507쪽. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). 《Memory devices and applications for in-memory computing》 (영어). 《Nature Nanotechnology》 15. 529–544쪽. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). 《HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs》. 《IEEE Journal of Solid-State Circuits》 57. 1027–1038쪽. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.
Karpov, I.V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y.A.; Karpov, V.G. (2007). 《Fundamental drift of parameters in chalcogenide phase change memory》. 《J. Appl. Phys.》 102. 124503–124503–6쪽. Bibcode:2007JAP...102l4503K. doi:10.1063/1.2825650.
Kolomiets, B. T. (1964). 《Vitreous Semiconductors (I)》. 《Physica Status Solidi B》 7. 359–372쪽. Bibcode:1964PSSBR...7..359K. doi:10.1002/pssb.19640070202. S2CID 222432031.
Kolomiets, B. T. (1964). 《Vitreous Semiconductors (II)》. 《Physica Status Solidi B》 7. 713–731쪽. Bibcode:1964PSSBR...7..713K. doi:10.1002/pssb.19640070302.
Chung, H. 외 (2011). 〈A 58nm 1.8V 1 Gb PRAM with 6.4 MB/s program BW〉. 《2011 IEEE International Solid-State Circuits Conference》. 500–2쪽. doi:10.1109/ISSCC.2011.5746415. ISBN 978-1-61284-303-2. S2CID 206996875.

eetimes.com (Global: 4,224^th place; Korean: 1,003^rd place)

“Samsung to ship MCP with phase-change”. EE Times. 2010년 4월 28일. 2010년 5월 3일에 확인함.

eetimessupplynetwork.com (Global: low place; Korean: low place)

“Samsung moves phase-change memory to production”. ^{[깨진 링크(과거 내용 찾기)]}

engadget.com (Global: 613^th place; Korean: 248^th place)

“IBM develops 'instantaneous' memory, 100x faster than flash”. engadget. 2011년 6월 30일. 2011년 6월 30일에 확인함.
Engadget Samsung PRAM chips go into mass production

eweek.com (Global: 8,041^st place; Korean: 2,615^th place)

“Intel Previews Potential Replacement for Flash”. ^{[깨진 링크(과거 내용 찾기)]}

extremetech.com (Global: 6,470^th place; Korean: 1,526^th place)

Hruska, Joel (2014년 5월 8일). “IBM demonstrates next-gen phase-change memory that's up to 275 times faster than your SSD”. ExtremeTech.
Hruska, Joel (2014년 8월 6일). “Western Digital's HGST division creates new phase-change SSD that's orders of magnitude faster than any NAND flash drive on the market”. ExtremeTech.

iastate.edu (Global: 2,388^th place; Korean: 2,106^th place)

lib.dr.iastate.edu

Sie, C.H. (1969). 《Memory cell using bistable resistivity in amorphous As-Te-Ge film》 (PhD). 《Retrospective Theses and Dissertations》 (Iowa State University). 3604 https://lib.dr.iastate.edu/rtd/3604.

ieee.org (Global: 912^th place; Korean: 312^th place)

ieeexplore.ieee.org

Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). 《Recent Progress in Phase-Change Memory Technology》. 《IEEE Journal on Emerging and Selected Topics in Circuits and Systems》 6. 146–162쪽. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). 《Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element》. 《IEEE Transactions on Electron Devices》 62. 3498–3507쪽. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.

intel.com (Global: 1,727^th place; Korean: 396^th place)

“Intel and Numonyx Achieve Research Milestone with Stacked, Cross Point Phase Change Memory Technology”. 《www.intel.com》.

kurzweilai.net (Global: low place; Korean: 6,847^th place)

“Will phase-change memory replace flash memory?”. KurzweilAI. 2013년 9월 28일에 원본 문서에서 보존된 문서. 2013년 9월 17일에 확인함.

micron.com (Global: low place; Korean: 5,883^rd place)

investors.micron.com

miracd.com (Global: low place; Korean: low place)

A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth 보관됨 2012-01-31 - 웨이백 머신

nature.com (Global: 207^th place; Korean: 145^th place)

Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). 《Memory devices and applications for in-memory computing》 (영어). 《Nature Nanotechnology》 15. 529–544쪽. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.

nih.gov (Global: 5^th place; Korean: 4^th place)

ncbi.nlm.nih.gov

Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya 외 (July 2011). 《Interfacial phase-change memory》. 《Nature Nanotechnology》 6. 501–5쪽. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Simpson, R. E. (2010). 《Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅》. 《Nano Letters》 10. 414–9쪽. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). 《Memory devices and applications for in-memory computing》 (영어). 《Nature Nanotechnology》 15. 529–544쪽. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.

numonyx.com (Global: low place; Korean: low place)

“Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes”. Numonyx. 2008년 2월 6일. 2008년 6월 9일에 원본 문서에서 보존된 문서. 2008년 8월 15일에 확인함.
“Numonyx Memory Solutions - Numonyx Introduces New Phase Change Memory Devices”. 2010년 4월 25일. 2010년 4월 25일에 원본 문서에서 보존된 문서.

objective-analysis.com (Global: low place; Korean: low place)

Moore, Gordon E.; Neale, R.G.; Nelson, D.L. (1970년 9월 28일). 《Nonvolatile and reprogramable, the read-mostly memory is here》 (PDF). 《Electronics》. 56–60쪽. 2022년 7월 7일에 원본 문서 (PDF)에서 보존된 문서. 2022년 4월 22일에 확인함.

psu.edu (Global: 299^th place; Korean: 150^th place)

citeseerx.ist.psu.edu

Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.

samsung.com (Global: 2,692^nd place; Korean: 258^th place)

SAMSUNG Introduces the Next Generation of Nonvolatile Memory—PRAM
“Samsung Electronics and Numonyx Join Forces on Phase Change Memory”. Samsung. 2009년 6월 23일.
“Page Not Found - SAMSUNG”. 《Samsung Electronics America》. 2010년 8월 21일에 원본 문서에서 보존된 문서.

semanticscholar.org (Global: 15^th place; Korean: 11^th place)

api.semanticscholar.org

Le Gallo, Manuel; Sebastian, Abu (2020년 3월 30일). 《An overview of phase-change memory device physics》 (영어). 《Journal of Physics D: Applied Physics》 53. 213002쪽. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). 《Recent Progress in Phase-Change Memory Technology》. 《IEEE Journal on Emerging and Selected Topics in Circuits and Systems》 6. 146–162쪽. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya 외 (July 2011). 《Interfacial phase-change memory》. 《Nature Nanotechnology》 6. 501–5쪽. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
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Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). 《Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element》. 《IEEE Transactions on Electron Devices》 62. 3498–3507쪽. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
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“SK hynix and IBM Sign Joint Development for PCRAM” (미국 영어). 《SK hynix Newsroom》. 2022년 2월 5일에 확인함.

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Mellor, Chris (2011년 10월 10일), “HP and Hynix to produce the memristor goods by 2013”, 《The Register》, 2012년 3월 7일에 확인함
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“Intel Previews Potential Replacement for Flash”. ^{[깨진 링크(과거 내용 찾기)]}
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“Phase Change to Replace Flash?”. 2007년 9월 27일에 원본 문서에서 보존된 문서.
“Samsung moves phase-change memory to production”. ^{[깨진 링크(과거 내용 찾기)]}
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A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth 보관됨 2012-01-31 - 웨이백 머신

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Le Gallo, Manuel; Sebastian, Abu (2020년 3월 30일). 《An overview of phase-change memory device physics》 (영어). 《Journal of Physics D: Applied Physics》 53. 213002쪽. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). 《Recent Progress in Phase-Change Memory Technology》. 《IEEE Journal on Emerging and Selected Topics in Circuits and Systems》 6. 146–162쪽. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). 《Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element》. 《IEEE Transactions on Electron Devices》 62. 3498–3507쪽. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). 《Memory devices and applications for in-memory computing》 (영어). 《Nature Nanotechnology》 15. 529–544쪽. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). 《HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs》. 《IEEE Journal of Solid-State Circuits》 57. 1027–1038쪽. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.

youtube.com (Global: 13^th place; Korean: 18^th place)

“A Cinematic Study of Mechanisms of Phase Change Memory”. YouTube. 2012년 6월 21일. 2013년 7월 23일에 원본 문서에서 보존된 문서. 2013년 9월 17일에 확인함.

PRAM (Korean Wikipedia)

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