RRAM (Korean Wikipedia)

Lamb, D R; Rundle, P C (1967). 《A non-filamentary switching action in thermally grown silicon dioxide films》. 《British Journal of Applied Physics》 18. 29–32쪽. Bibcode:1967BJAP...18...29L. doi:10.1088/0508-3443/18/1/306.
Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho (2007). 《Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides》. 《Japanese Journal of Applied Physics》 46. 2172쪽. Bibcode:2007JaJAP..46.2172P. doi:10.1143/JJAP.46.2172. S2CID 122024553.
Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). 《Resistive switching in silicon suboxide films》. 《Journal of Applied Physics》 111. 074507–074507–9쪽. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.
Nielsen, P. H.; Bashara, N. M. (1964). 《The reversible voltage-induced initial resistance in the negative resistance sandwich structure》. 《IEEE Transactions on Electron Devices》 11. 243–244쪽. Bibcode:1964ITED...11..243N. doi:10.1109/T-ED.1964.15319. ISSN 0018-9383.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). 《Electrical phenomena in amorphous oxide films》 (PDF) (영어). 《Reports on Progress in Physics》 33. 1129–1191쪽. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. 2018년 3월 20일에 원본 문서 (PDF)에서 보존된 문서. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1997년 11월 1일). 《Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications》 (영어). 《Journal of Electronic Materials》 26. 1310–1313쪽. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Chua, L. O. (2011), “Resistance switching memories are memristors”, 《Applied Physics A》 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Valov, I.; Linn, E.; S.; S.; J.; F.; R. (2013). 《Nanobatteries in redox-based resistive switches require extension of memristor theory》. 《Nature Communications》 4. 1771쪽. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Lanza, Mario (2014). 《A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope》. 《Materials》 7. 2155–2182쪽. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.
Lee, D.; Seong, D. J.; Jo, I.; Xiang, F.; Dong, R.; Oh, S.; Hwang, H. (2007). 《Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications》. 《Applied Physics Letters》 90. 122104쪽. Bibcode:2007ApPhL..90l2104L. doi:10.1063/1.2715002.
Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012년 11월 5일). 《Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries》. 《Applied Physics Letters》 101. 193502쪽. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.
Waser, Rainer; Aono, Masakazu (2007). 《Nanoionics-based resistive switching memories》 (영어). 《Nature Materials》 6. 833–840쪽. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Kannan, V; Rhee J K (2011년 10월 6일). 《Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory》. 《Applied Physics Letters》 99. 143504쪽. Bibcode:2011ApPhL..99n3504K. doi:10.1063/1.3647629 – AIP 경유.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel I; Ashrafi, Almamun; Zhong, Jian; Lu, Yicheng (2013). 《Vertically integrated ZnO-Based 1D1R structure for resistive switching》. 《Journal of Physics D: Applied Physics》 46. 145101쪽. Bibcode:2013JPhD...46n5101Z. doi:10.1088/0022-3727/46/14/145101. S2CID 121110610.
Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). 《Nanoscale control of an interfacial metal–insulator transition at room temperature》. 《Nature Materials》 7. 298–302쪽. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.
Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Hu, Chenming; Tseng, Tseung-Yuen (2007). 《Bistable Resistive Switching in Al2O3 Memory Thin Films》. 《Journal of the Electrochemical Society》 154. G189쪽. Bibcode:2007JElS..154G.189L. doi:10.1149/1.2750450.
Linn, Eike; Rosezin, Roland; Kügeler, Carsten; Waser, Rainer (2010). 《Complementary resistive switches for passive nanocrossbar memories》. 《Nature Materials》 9. 403–6쪽. Bibcode:2010NatMa...9..403L. doi:10.1038/nmat2748. PMID 20400954.
Tappertzhofen, S; Linn, E; Nielen, L; Rosezin, R; Lentz, F; Bruchhaus, R; Valov, I; Böttger, U; Waser, R (2011). 《Capacity based nondestructive readout for complementary resistive switches》. 《Nanotechnology》 22. 395203쪽. Bibcode:2011Nanot..22M5203T. doi:10.1088/0957-4484/22/39/395203. PMID 21891857. S2CID 12305490.
Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.; Miao, Feng; Paul Strachan, John; Li, Wen-Di; Yi, Wei; Ohlberg, Douglas A. A.; Joon Choi, Byung; Wu, Wei; Nickel, Janice H.; Medeiros-Ribeiro, Gilberto; Stanley Williams, R. (2012). 《Engineering nonlinearity into memristors for passive crossbar applications》. 《Applied Physics Letters》 100. 113501쪽. Bibcode:2012ApPhL.100k3501J. doi:10.1063/1.3693392.
Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej; Hudziak, Stephen; Labbé, Christophe; Rizk, Richard; Kenyon, Anthony J (2012). 《Electrically tailored resistance switching in silicon oxide》. 《Nanotechnology》 23. 455201쪽. Bibcode:2012Nanot..23S5201M. doi:10.1088/0957-4484/23/45/455201. PMID 23064085. S2CID 12528923.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel; Ashrafi, Almamun; Lu, Yicheng (2012). 《FeZnO-Based Resistive Switching Devices》. 《Journal of Electronic Materials》 41. 2880쪽. Bibcode:2012JEMat..41.2880Z. doi:10.1007/s11664-012-2045-2. S2CID 95921756.
Chen, F. T.; Chen, Y. S.; Wu, T. Y.; Ku, T. K. (2014). 《Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture》. 《IEEE Electron Device Letters》 35. 223–225쪽. Bibcode:2014IEDL...35..223C. doi:10.1109/LED.2013.2294809. ISSN 0741-3106. S2CID 1126533.
Prezioso, M. 외 (2016). Teherani, Ferechteh H; Look, David C; Rogers, David J (편집). 《RRAM-based Hardware Implementation of Artificial Neural Networks: Progress Updates and Challenges Ahead》 (PDF). 《SPIE Annual Review》. Oxide-based Materials and Devices VII 9749. 974918쪽. Bibcode:2016SPIE.9749E..18P. doi:10.1117/12.2235089. S2CID 20633281. 2021년 6월 13일에 확인함.

aem-journal.com (Global: low place; Korean: low place)

“Advanced Engineering Materials – Wiley Online Library”. Aem-journal.com. doi:10.1002/(ISSN)1527-2648. 2013년 4월 30일에 원본 문서에서 보존된 문서. 2014년 8월 13일에 확인함.

archives-ouvertes.fr (Global: 1,143^rd place; Korean: 747^th place)

hal.archives-ouvertes.fr

Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). 《Resistive switching in silicon suboxide films》. 《Journal of Applied Physics》 111. 074507–074507–9쪽. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.

arxiv.org (Global: 49^th place; Korean: 28^th place)

Meuffels, P.; Soni, R. (2012), “Fundamental Issues and Problems in the Realization of Memristors”, arXiv:1207.7319 [cond-mat.mes-hall]
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (July 2020). 《An experimental proof that resistance-switching memories are not memristors》. 《Advanced Electronic Materials》 6. arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Valov, I.; Linn, E.; S.; S.; J.; F.; R. (2013). 《Nanobatteries in redox-based resistive switches require extension of memristor theory》. 《Nature Communications》 4. 1771쪽. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.

blocksandfiles.com (Global: low place; Korean: low place)

Mellor, Chris (2023년 3월 16일). “Taking a look at the ReRAM state of play” (미국 영어). 《Blocks and Files》. 2023년 11월 3일에 확인함.

businesswire.com (Global: 828^th place; Korean: 723^rd place)

“Panasonic and United Microelectronics Corporation Agreed to Develop Mass Production Process for Next Generation ReRAM”. 《www.businesswire.com》. 2017년 2월 6일.

cambridge.org (Global: 209^th place; Korean: 215^th place)

journals.cambridge.org

I.V. Karpov, D. Kencke, D. Kau, S. Tang and G. Spadini, MRS Proceedings, Volume 1250, 2010

channelregister.co.uk (Global: low place; Korean: low place)

Mellor, Chris (2012년 2월 7일), 《Rambus drops $35m for Unity Semiconductor》

dialog-semiconductor.com (Global: low place; Korean: low place)

“Dialog Semiconductor: Advancing the connected world through technology | Dialog”. 《www.dialog-semiconductor.com》.

doi.org (Global: 2^nd place; Korean: 3^rd place)

dx.doi.org

Lee, H. Y.; Chen, P. S.; Wu, T. Y.; Chen, Y. S.; Wang, C. C.; Tzeng, P. J.; Lin, C. H.; Chen, F.; Lien, C. H.; Tsai, M. J. (2008). 〈Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM〉. 《2008 IEEE International Electron Devices Meeting》. 1–4쪽. doi:10.1109/IEDM.2008.4796677. ISBN 978-1-4244-2377-4. S2CID 26927991.
Lamb, D R; Rundle, P C (1967). 《A non-filamentary switching action in thermally grown silicon dioxide films》. 《British Journal of Applied Physics》 18. 29–32쪽. Bibcode:1967BJAP...18...29L. doi:10.1088/0508-3443/18/1/306.
Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho (2007). 《Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides》. 《Japanese Journal of Applied Physics》 46. 2172쪽. Bibcode:2007JaJAP..46.2172P. doi:10.1143/JJAP.46.2172. S2CID 122024553.
Mehonic, A.; Cueff, S. B.; Wojdak, M.; Hudziak, S.; Jambois, O.; Labbé, C.; Garrido, B.; Rizk, R.; Kenyon, A. J. (2012). 《Resistive switching in silicon suboxide films》. 《Journal of Applied Physics》 111. 074507–074507–9쪽. Bibcode:2012JAP...111g4507M. doi:10.1063/1.3701581.
Bashara, N. M.; Nielsen, P. H. (1963). 〈Memory effects in thin film negative resistance structures〉. 《Annual Report 1963 Conference on Electrical Insulation》. 29–32쪽. doi:10.1109/EIC.1963.7466544. ISBN 978-1-5090-3119-1.
Nielsen, P. H.; Bashara, N. M. (1964). 《The reversible voltage-induced initial resistance in the negative resistance sandwich structure》. 《IEEE Transactions on Electron Devices》 11. 243–244쪽. Bibcode:1964ITED...11..243N. doi:10.1109/T-ED.1964.15319. ISSN 0018-9383.
Simmons, J. G.; Verderber, R. R. (August 1967). 《New thin-film resistive memory》. 《Radio and Electronic Engineer》 34. 81–89쪽. doi:10.1049/ree.1967.0069. ISSN 0033-7722. 2017년 1월 1일에 원본 문서에서 보존된 문서.
Lomax, R. W.; Simmons, J. G. (1968). 《A thin film, cold cathode, alpha-numeric display panel》. 《Radio and Electronic Engineer》 35. 265–272쪽. doi:10.1049/ree.1968.0039. ISSN 0033-7722. 2018년 3월 20일에 원본 문서에서 보존된 문서.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). 《Electrical phenomena in amorphous oxide films》 (PDF) (영어). 《Reports on Progress in Physics》 33. 1129–1191쪽. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. 2018년 3월 20일에 원본 문서 (PDF)에서 보존된 문서. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
Jung, K. B.; Lee, J. W.; Park, Y. D.; Childress, J. R.; Pearton, S. J.; Jenson, M.; Hurst, A. T. (1997년 11월 1일). 《Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications》 (영어). 《Journal of Electronic Materials》 26. 1310–1313쪽. Bibcode:1997JEMat..26.1310J. doi:10.1007/s11664-997-0076-x. ISSN 0361-5235. S2CID 93702602.
Chua, L. O. (2011), “Resistance switching memories are memristors”, 《Applied Physics A》 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). 《On the physical properties of memristive, memcapacitive and meminductive systems》. 《Nanotechnology》 24. 255201쪽. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Kim, J.; Pershin, Y. V.; Yin, M.; Datta, T.; Di Ventra, M. (July 2020). 《An experimental proof that resistance-switching memories are not memristors》. 《Advanced Electronic Materials》 6. arXiv:1909.07238. doi:10.1002/aelm.202000010. S2CID 202577242.
Valov, I.; Linn, E.; S.; S.; J.; F.; R. (2013). 《Nanobatteries in redox-based resistive switches require extension of memristor theory》. 《Nature Communications》 4. 1771쪽. arXiv:1303.2589. Bibcode:2013NatCo...4.1771V. doi:10.1038/ncomms2784. PMC 3644102. PMID 23612312.
Mehonic, A.; Munde, M. S.; Ng, W. H.; M.; L.; M.; A. L.; A. J. (2017). 《Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices》. 《Microelectronic Engineering》 178. 98–103쪽. doi:10.1016/j.mee.2017.04.033.
Lanza, Mario (2014). 《A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope》. 《Materials》 7. 2155–2182쪽. Bibcode:2014Mate....7.2155L. doi:10.3390/ma7032155. PMC 5453275. PMID 28788561.
Lee, D.; Seong, D. J.; Jo, I.; Xiang, F.; Dong, R.; Oh, S.; Hwang, H. (2007). 《Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications》. 《Applied Physics Letters》 90. 122104쪽. Bibcode:2007ApPhL..90l2104L. doi:10.1063/1.2715002.
Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012년 11월 5일). 《Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries》. 《Applied Physics Letters》 101. 193502쪽. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.
Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei; Nafria, Montserrat; Porti, Marc; Bersuker, Gennadi; Lanza, Mario (2015년 4월 1일). 《In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories》 (영어). 《Advanced Electronic Materials》 1. n/a쪽. doi:10.1002/aelm.201400058. ISSN 2199-160X. S2CID 110305072.
“Advanced Engineering Materials – Wiley Online Library”. Aem-journal.com. doi:10.1002/(ISSN)1527-2648. 2013년 4월 30일에 원본 문서에서 보존된 문서. 2014년 8월 13일에 확인함.
Chen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, H. Y.; Lin, Cha-Hsin; Chen, F.; Tsai, Ming-Jinn (2009). 〈Forming-free HfO₂ bipolar RRAM device with improved endurance and high speed operation〉. 《2009 International Symposium on VLSI Technology, Systems, and Applications》. 37–38쪽. doi:10.1109/VTSA.2009.5159281. ISBN 978-1-4244-2784-0. S2CID 7590725.
Balakrishnan, M.; Thermadam, S. C. P.; Mitkova, M.; Kozicki, M. N. (2006). 〈A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide〉. 《2006 7th Annual Non-Volatile Memory Technology Symposium》. 104–110쪽. doi:10.1109/NVMT.2006.378887. ISBN 978-0-7803-9738-5. S2CID 27573769.
Sills, S.; Yasuda, S.; Strand, J.; A.; Aratani, K.; Johnson, A.; Ramaswamy, N. (2014). 〈A copper ReRAM cell for Storage Class Memory applications〉. 《2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers》. 1–2쪽. doi:10.1109/VLSIT.2014.6894368. ISBN 978-1-4799-3332-7. S2CID 9690870.
Mandapati, R.; Shrivastava, S.; Das, B.; Sushama; Ostwal, V.; Schulze, J.; Ganguly, U. (2014). 〈High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM〉. 《72nd Device Research Conference》. 241–242쪽. doi:10.1109/DRC.2014.6872387. ISBN 978-1-4799-5406-3. S2CID 31770873.
Waser, Rainer; Aono, Masakazu (2007). 《Nanoionics-based resistive switching memories》 (영어). 《Nature Materials》 6. 833–840쪽. Bibcode:2007NatMa...6..833W. doi:10.1038/nmat2023. ISSN 1476-4660. PMID 17972938.
Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco M.; Larcher, Luca (2017년 1월 1일). 《Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride》 (영어). 《Advanced Functional Materials》 27. n/a쪽. doi:10.1002/adfm.201604811. hdl:11380/1129421. ISSN 1616-3028. S2CID 100500198.
Puglisi, F. M.; Larcher, L.; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. (2016년 12월 1일). 〈2D h-BN based RRAM devices〉. 《2016 IEEE International Electron Devices Meeting (IEDM)》. 34.8.1–34.8.4쪽. doi:10.1109/IEDM.2016.7838544. hdl:11380/1129447. ISBN 978-1-5090-3902-9. S2CID 28059875.
Tsunoda, K.; Kinoshita, K.; Noshiro, H.; Yamazaki, Y.; Iizuka, T.; Ito, Y.; Takahashi, A.; Okano, A.; Sato, Y.; Fukano, T.; Aoki, M.; Sugiyama, Y. (2007). 〈Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V〉. 《2007 IEEE International Electron Devices Meeting》. 767–770쪽. doi:10.1109/IEDM.2007.4419060. ISBN 978-1-4244-1507-6. S2CID 40684267.
Wei, Z.; Kanzawa, Y.; Arita, K.; Katoh, Y.; Kawai, K.; Muraoka, S.; Mitani, S.; Fujii, S.; Katayama, K.; Iijima, M.; Mikawa, T.; Ninomiya, T.; Miyanaga, R.; Kawashima, Y.; Tsuji, K.; Himeno, A.; Okada, T.; Azuma, R.; Shimakawa, K.; Sugaya, H.; Takagi, T.; Yasuhara, R.; Horiba, K.; Kumigashira, H.; Oshima, M. (2008). 〈Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism〉. 《2008 IEEE International Electron Devices Meeting》. 1–4쪽. doi:10.1109/IEDM.2008.4796676. ISBN 978-1-4244-2377-4. S2CID 30862029.
Kannan, V; Rhee J K (2011년 10월 6일). 《Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory》. 《Applied Physics Letters》 99. 143504쪽. Bibcode:2011ApPhL..99n3504K. doi:10.1063/1.3647629 – AIP 경유.
Zhang, Yang; Duan, Ziqing; Li, Rui; Ku, Chieh-Jen; Reyes, Pavel I; Ashrafi, Almamun; Zhong, Jian; Lu, Yicheng (2013). 《Vertically integrated ZnO-Based 1D1R structure for resistive switching》. 《Journal of Physics D: Applied Physics》 46. 145101쪽. Bibcode:2013JPhD...46n5101Z. doi:10.1088/0022-3727/46/14/145101. S2CID 121110610.
Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Chen, C. W.; Lin, W. P.; Liu, W. H.; Hsu, Y. Y.; Sheu, S. S.; Chiang, P. C.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M. J. (2009). 〈Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity〉. 《2009 IEEE International Electron Devices Meeting (IEDM)》. 1–4쪽. doi:10.1109/IEDM.2009.5424411. ISBN 978-1-4244-5639-0. S2CID 36391893.
Cen, C.; Thiel, S.; Hammerl, G.; Schneider, C. W.; Andersen, K. E.; Hellberg, C. S.; Mannhart, J.; Levy, J. (2008). 《Nanoscale control of an interfacial metal–insulator transition at room temperature》. 《Nature Materials》 7. 298–302쪽. Bibcode:2008NatMa...7..298C. doi:10.1038/nmat2136. PMID 18311143.
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Lanza, M.; Bersuker, G.; Porti, M.; Miranda, E.; Nafría, M.; Aymerich, X. (2012년 11월 5일). 《Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries》. 《Applied Physics Letters》 101. 193502쪽. Bibcode:2012ApPhL.101s3502L. doi:10.1063/1.4765342. ISSN 0003-6951.

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uni-augsburg.de (Global: low place; Korean: 5,319^th place)

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Mass Producing Printed Electronics 보관됨 2017-04-12 - 웨이백 머신 -Engineering.com

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Lomax, R. W.; Simmons, J. G. (1968). 《A thin film, cold cathode, alpha-numeric display panel》. 《Radio and Electronic Engineer》 35. 265–272쪽. doi:10.1049/ree.1968.0039. ISSN 0033-7722. 2018년 3월 20일에 원본 문서에서 보존된 문서.
Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. (1970). 《Electrical phenomena in amorphous oxide films》 (PDF) (영어). 《Reports on Progress in Physics》 33. 1129–1191쪽. Bibcode:1970RPPh...33.1129D. doi:10.1088/0034-4885/33/3/306. ISSN 0034-4885. S2CID 14500522. 2018년 3월 20일에 원본 문서 (PDF)에서 보존된 문서. [p. 1180] A thin-film resistive memory array based upon voltage-controlled negative resistance in SiO, was first proposed by Nielsen and Bashara (1964) and such a device has been described by Simmons and Verderber (1968).
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RRAM (Korean Wikipedia)

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