Analysis of information sources in references of the Wikipedia article "동적 램" in Korean language version.
a new address can be provided for the next access cycle before completing the current cycle allowing a shorter CAS pulse width, dramatically decreasing cycle times.
The first commercial synchronous DRAM, the Samsung 16-Mbit KM48SL2000, employs a single-bank architecture that lets system designers easily transition from asynchronous to synchronous systems.
So for the same –60 part, EDO DRAM is about 30% faster than FPM DRAM in peak data rate.
Micron MT4C1024 — 1 mebibit (220 bit) dynamic ram. Widely used in 286 and 386-era computers, early 90s. Die size - 8662x3969μm.
a new address can be provided for the next access cycle before completing the current cycle allowing a shorter CAS pulse width, dramatically decreasing cycle times.
So for the same –60 part, EDO DRAM is about 30% faster than FPM DRAM in peak data rate.
Micron MT4C1024 — 1 mebibit (220 bit) dynamic ram. Widely used in 286 and 386-era computers, early 90s. Die size - 8662x3969μm.