Metodă Czochralski (Romanian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Metodă Czochralski" in Romanian language version.

refsWebsite

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6harvard.edu

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6doi.org

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1hathitrust.org

441^st place

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1arxiv.org

69^th place

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1bbc.co.uk

8^th place

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1nih.gov

4^th place

1electronicsweekly.com

low place

1theimage.com

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1unt.edu

1,336^th place

low place

1psu.edu

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1ecn.nl

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1web.archive.org

1^st place

arxiv.org

en Son, JK (14 mai 2020). „Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP”. Journal of Instrumentation. 15 (7): C07035. arXiv:2005.06797 . Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035.

bbc.co.uk

en Czochralski Crystal Growth Method. Bbc.co.uk. 30 January 2003. Retrieved on 2011-12-06.

doi.org

en Son, JK (14 mai 2020). „Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP”. Journal of Instrumentation. 15 (7): C07035. arXiv:2005.06797 . Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035.
en Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A. (2002). „Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals”. Annals of the New York Academy of Sciences. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012.
en Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). „Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors”. IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360.
en Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, G.M; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, T.J; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, M.J; Creanza, D; et al. (2001). „Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration”. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466 (2): 308. Bibcode:2001NIMPA.466..308L. doi:10.1016/S0168-9002(01)00560-5.
en Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). „Particle detectors made of high-resistivity Czochralski silicon”. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366 . doi:10.1016/j.nima.2005.01.057.
en Custer, J. S.; Polman, A.; Van Pinxteren, H. M. (1994). „Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon”. Journal of Applied Physics. 75 (6): 2809. Bibcode:1994JAP....75.2809C. doi:10.1063/1.356173.

ecn.nl

en Eikelboom, J.A., Jansen, M.J., 2000. Characterisation of PV modules of new generations; results of tests and simulations Arhivat în 24 aprilie 2012, la Wayback Machine.. Report ECN-C-00-067, 18.

electronicsweekly.com

en Doubts over 450mm and EUV. Electronicsweekly.com. December 30, 2013. Retrieved on 2014-01-09.

harvard.edu

adsabs.harvard.edu

en Son, JK (14 mai 2020). „Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP”. Journal of Instrumentation. 15 (7): C07035. arXiv:2005.06797 . Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035.
en Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A. (2002). „Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals”. Annals of the New York Academy of Sciences. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012.
en Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). „Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors”. IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360.
en Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, G.M; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, T.J; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, M.J; Creanza, D; et al. (2001). „Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration”. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466 (2): 308. Bibcode:2001NIMPA.466..308L. doi:10.1016/S0168-9002(01)00560-5.
en Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). „Particle detectors made of high-resistivity Czochralski silicon”. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366 . doi:10.1016/j.nima.2005.01.057.
en Custer, J. S.; Polman, A.; Van Pinxteren, H. M. (1994). „Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon”. Journal of Applied Physics. 75 (6): 2809. Bibcode:1994JAP....75.2809C. doi:10.1063/1.356173.

hathitrust.org

babel.hathitrust.org

en J. Czochralski (1918) "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle" [A new method for the measurement of the crystallization rate of metals], Zeitschrift für Physikalische Chemie, 92 : 219–221.

nih.gov

ncbi.nlm.nih.gov

en Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A. (2002). „Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals”. Annals of the New York Academy of Sciences. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012.

psu.edu

citeseerx.ist.psu.edu

en Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). „Particle detectors made of high-resistivity Czochralski silicon”. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366 . doi:10.1016/j.nima.2005.01.057.

theimage.com

en „Czochralski Process”. www.theimage.com. Accesat în 25 februarie 2016.

unt.edu

digital.library.unt.edu

en Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). „Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors”. IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360.

web.archive.org

en Eikelboom, J.A., Jansen, M.J., 2000. Characterisation of PV modules of new generations; results of tests and simulations Arhivat în 24 aprilie 2012, la Wayback Machine.. Report ECN-C-00-067, 18.