The Photoresist Process and it's Application to the Semiconductor Industry (неопр.). CE435 - INTRODUCTION TO POLYMERS. Dept of Chemical and Biological Engineering. State University of New York (19 апреля 2000). — «...positives are more costly to produce. However, images from this resist are extremely accurate, require minimal processing technique, and involve few processing steps.» Дата обращения: 18 декабря 2015. Архивировано 22 декабря 2015 года.
gatech.edu
www2.ece.gatech.edu
Positive and Negative Photoresist(англ.). ECE, Georgia Tech. — «Negative resists were popular in the early history of integrated circuit processing, but positive resist gradually became more widely used since they offer better process controllability for small geometry features. Positive resists are now the dominant type of resist used in VLSI fabrication processes.» Дата обращения: 18 декабря 2015. Архивировано из оригинала 5 декабря 2015 года.
Lecture11: Photolithography - I(англ.). “Instability and Patterning of Thin Polymer films”. Indian Institute of Technology. — «Historically, by 1972 the limitations of negative photoresist were reached. Subsequent developments were all based on positive photo resists.» Дата обращения: 18 декабря 2015. Архивировано из оригинала 22 декабря 2015 года.
Advanced Photoresist TechnologyАрхивная копия от 5 марта 2016 на Wayback Machine / PSU, EE518, 2006: "Two-component DQN resists: DQN, corresponding to the photo-active compound, diazoquinone (DQ) and resin, novolac (N). Dominant for G-line (436nm) and I- line (365nm) exposure and not suitable for very short wavelength exposures"
Advanced Photoresist TechnologyАрхивная копия от 5 марта 2016 на Wayback Machine / PSU, EE518, 2006: "Deep UV Photoresist ... Limitation of Novolac based Photoresist: Strongly absorb below 250nm, KrF (248nm) marginally acceptable but not ArF (193nm). Photoresist Solution for Submicron Features..."
Positive and Negative Photoresist(англ.). ECE, Georgia Tech. — «Negative resists were popular in the early history of integrated circuit processing, but positive resist gradually became more widely used since they offer better process controllability for small geometry features. Positive resists are now the dominant type of resist used in VLSI fabrication processes.» Дата обращения: 18 декабря 2015. Архивировано из оригинала 5 декабря 2015 года.
Lecture11: Photolithography - I(англ.). “Instability and Patterning of Thin Polymer films”. Indian Institute of Technology. — «Historically, by 1972 the limitations of negative photoresist were reached. Subsequent developments were all based on positive photo resists.» Дата обращения: 18 декабря 2015. Архивировано из оригинала 22 декабря 2015 года.
The Photoresist Process and it's Application to the Semiconductor Industry (неопр.). CE435 - INTRODUCTION TO POLYMERS. Dept of Chemical and Biological Engineering. State University of New York (19 апреля 2000). — «...positives are more costly to produce. However, images from this resist are extremely accurate, require minimal processing technique, and involve few processing steps.» Дата обращения: 18 декабря 2015. Архивировано 22 декабря 2015 года.
Advanced Photoresist TechnologyАрхивная копия от 5 марта 2016 на Wayback Machine / PSU, EE518, 2006: "Two-component DQN resists: DQN, corresponding to the photo-active compound, diazoquinone (DQ) and resin, novolac (N). Dominant for G-line (436nm) and I- line (365nm) exposure and not suitable for very short wavelength exposures"
Advanced Photoresist TechnologyАрхивная копия от 5 марта 2016 на Wayback Machine / PSU, EE518, 2006: "Deep UV Photoresist ... Limitation of Novolac based Photoresist: Strongly absorb below 250nm, KrF (248nm) marginally acceptable but not ArF (193nm). Photoresist Solution for Submicron Features..."
