Arzenid galitý (Slovak Wikipedia)

Analysis of information sources in references of the Wikipedia article "Arzenid galitý" in Slovak language version.

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21doi.org

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6worldcat.org

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6nih.gov

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4web.archive.org

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2uspto.gov

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2books.google.com

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2ieee.org

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1stuba.sk

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1nextech.sk

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1techbox.sk

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1aldebaran.cz

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1ucl.ac.uk

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1archive.org

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1arstechnica.com

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1nobelprize.org

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1hubblesite.org

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1fraunhofer.de

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1intechopen.com

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1isolarparts.com

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1nrel.gov

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1gla.ac.uk

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1sciencedirect.com

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1nature.com

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1optocon.de

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1ca.gov

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1sigmaaldrich.com

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aldebaran.cz

SCHOLTZ, Vladimír. 50 rokov Gunnovho javu. Aldebaran.cz (Praha: Aldebaran Group for Astrophysics), 2012. Dostupné online [cit. 2023-05-20].

anandtech.com

CUTRESS, Dr Ian. 'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5 [online]. . Dostupné online.

archive.org

Šilc, Von Jurij; Robič, Borut; Ungerer, Theo. Processor architecture: from dataflow to superscalar and beyond. [s.l.] : Springer, 1999. Dostupné online. ISBN 978-3-540-64798-0. S. 34.

arstechnica.com

A reprieve for Moore's Law: milspec chip writes computing's next chapter [online]. 2016-06-09. Dostupné online.

books.google.com

Dennis Fisher; I. J. Bahl. Gallium Arsenide IC Applications Handbook. [s.l.] : Elsevier, 1995. Dostupné online. ISBN 978-0-12-257735-2. S. 61. 'Clear search' to see pages
CABRERA, Rowan. Electronic Devices and Circuits. [s.l.] : EDTECH, 2019. Dostupné online. ISBN 9781839473838. S. 35.

ca.gov

oehha.ca.gov

Chemicals Listed Effective August 1, 2008 as Known to the State of California to Cause Cancer or Reproductive Toxicity: gallium arsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide [online]. OEHHA, 2008-08-01. Dostupné online.

doi.org

dx.doi.org

Black GaAs by Metal-Assisted Chemical Etching. ACS Applied Materials & Interfaces, 3 October 2018, s. 33434–33440. Dostupné online. ISSN 1944-8244. DOI: 10.1021/acsami.8b10370. PMID 30191706.
YE, Peide D.; XUAN, Yi; WU, Yanqing. Fundamentals of III-V Semiconductor MOSFETs. [s.l.] : Springer Science & Business Media, 2010. ISBN 978-1-4419-1547-4. DOI:10.1007/978-1-4419-1547-4_7 Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model, s. 173–194.
SCHLESINGER, T.E.. Encyclopedia of Materials: Science and Technology. [s.l.] : Elsevier, 2001. Dostupné online. ISBN 9780080431529. DOI:10.1016/B0-08-043152-6/00612-4 Gallium Arsenide, s. 3431-3435.
Charge Redistribution at GaAs/P3HT Heterointerfaces with Different Surface Polarity. The Journal of Physical Chemistry Letters, 3 October 2013, s. 3303–3309. DOI: 10.1021/jz401485t.
Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.. High-Efficient Low-Cost Photovoltaics: Recent Developments. [s.l.] : Springer, 2009. ISBN 978-3-540-79359-5. DOI:10.1007/978-3-540-79359-5 2: From Extraterrestrial to Terrestrial Applications.
Schnitzer, I.; YABLONOVITCH, E; CANEAU, C. Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures. Applied Physics Letters, 1993, s. 131. DOI: 10.1063/1.109348.
Wang, X.; KHAN, M.R; GRAY, J. Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit. IEEE Journal of Photovoltaics, 2013, s. 737. DOI: 10.1109/JPHOTOV.2013.2241594.
YAMAGUCHI, Masafumi. High-Efficiency GaAs-Based Solar Cells. [s.l.] : IntechOpen, 2020-11-09. DOI: 10.5772/intechopen.94365. Dostupné online. ISBN 978-1-83968-261-2. DOI:10.5772/intechopen.94365 (po anglicky)
Global Progress Toward Renewable Electricity: Tracking the Role of Solar. IEEE Journal of Photovoltaics, November 2021, s. 1335–1342. Dostupné online. ISSN 2156-3381. DOI: 10.1109/JPHOTOV.2021.3104149.
Performance analysis of GaAs based solar cells under gamma irradiation. Applied Surface Science, 2020-04-30, s. 145329. Dostupné online. ISSN 0169-4332. DOI: 10.1016/j.apsusc.2020.145329. (po anglicky)
A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells [online]. 2018-11-27. Dostupné online. DOI:10.2172/1484349
High efficiency GaAs thin film solar cells by peeled film technology. Journal of Crystal Growth, 1978-12-01, s. 277–280. Dostupné online. ISSN 0022-0248. DOI: 10.1016/0022-0248(78)90449-9. (po anglicky)
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nature Communications, 2013-03-12, s. 1577. Dostupné online. ISSN 2041-1723. DOI: 10.1038/ncomms2583. PMID 23481385. (po anglicky)
(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) (Fort Lauderdale, FL, USA: IEEE), 2021-06-20, s. 1118–1120. Dostupné online. DOI: 10.1109/PVSC43889.2021.9518754.
Overview of the Current State of Gallium Arsenide-Based Solar Cells. Materials, 2021-06-04, s. 3075. ISSN 1996-1944. DOI: 10.3390/ma14113075. PMID 34199850. (po anglicky)
Current Status of Concentrator Photovoltaic (CPV) Technology [online]. 2015-12-01. Dostupné online. DOI:10.2172/1351597
HALL, Robert N.; Fenner, G. E.; Kingsley, J. D.. Coherent Light Emission From GaAs Junctions. Physical Review Letters, 1962, s. 366–369. DOI: 10.1103/PhysRevLett.9.366.
Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs. Nuclear Instruments and Methods in Physics Research Section A, 2022, s. 166803. DOI: 10.1016/j.nima.2022.166803.
Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors. Journal of Crystal Growth, 2004, s. 816–821. DOI: 10.1016/j.jcrysgro.2004.09.007.
Evaluation of the carcinogenicity of gallium arsenide. Critical Reviews in Toxicology, 2013, s. 436–466. DOI: 10.3109/10408444.2013.792329. PMID 23706044.

doi.org

SCHLESINGER, T.E.. Encyclopedia of Materials: Science and Technology. [s.l.] : Elsevier, 2001. Dostupné online. ISBN 9780080431529. DOI:10.1016/B0-08-043152-6/00612-4 Gallium Arsenide, s. 3431-3435.

fraunhofer.de

ise.fraunhofer.de

Record Efficiency of 68.9% for GaAs Thin Film Photovoltaic Cell Under Laser Light - Fraunhofer ISE [online]. . Dostupné online. (po anglicky)

gla.ac.uk

ppephysics.gla.ac.uk

Glasgow University report on CERN detector. Ppewww.physics.gla.ac.uk. Retrieved on 2013-10-16.

hubblesite.org

Hubble's Instruments Including Control and Support Systems (Cutaway) [online]. . Dostupné online. (po anglicky)

ieee.org

ieeexplore.ieee.org

Global Progress Toward Renewable Electricity: Tracking the Role of Solar. IEEE Journal of Photovoltaics, November 2021, s. 1335–1342. Dostupné online. ISSN 2156-3381. DOI: 10.1109/JPHOTOV.2021.3104149.
(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) (Fort Lauderdale, FL, USA: IEEE), 2021-06-20, s. 1118–1120. Dostupné online. DOI: 10.1109/PVSC43889.2021.9518754.

intechopen.com

YAMAGUCHI, Masafumi. High-Efficiency GaAs-Based Solar Cells. [s.l.] : IntechOpen, 2020-11-09. DOI: 10.5772/intechopen.94365. Dostupné online. ISBN 978-1-83968-261-2. DOI:10.5772/intechopen.94365 (po anglicky)

isolarparts.com

Rocket Lab unveils space solar cell with 33.3% efficiency [online]. . Dostupné online. (po kórejsky)

nature.com

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nature Communications, 2013-03-12, s. 1577. Dostupné online. ISSN 2041-1723. DOI: 10.1038/ncomms2583. PMID 23481385. (po anglicky)

nextech.sk

Chystá sa zásadný zlom v oblasti čipov? Vďaka gáliu budú rýchlejšie a lacnejšie [online]. IT News, 2015-03-27, [cit. 2023-05-19]. Dostupné online.

nih.gov

ncbi.nlm.nih.gov

Black GaAs by Metal-Assisted Chemical Etching. ACS Applied Materials & Interfaces, 3 October 2018, s. 33434–33440. Dostupné online. ISSN 1944-8244. DOI: 10.1021/acsami.8b10370. PMID 30191706.
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nature Communications, 2013-03-12, s. 1577. Dostupné online. ISSN 2041-1723. DOI: 10.1038/ncomms2583. PMID 23481385. (po anglicky)
Overview of the Current State of Gallium Arsenide-Based Solar Cells. Materials, 2021-06-04, s. 3075. ISSN 1996-1944. DOI: 10.3390/ma14113075. PMID 34199850. (po anglicky)
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987). "Conductivity of n-type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. PMID 9943488
Evaluation of the carcinogenicity of gallium arsenide. Critical Reviews in Toxicology, 2013, s. 436–466. DOI: 10.3109/10408444.2013.792329. PMID 23706044.

ntp.niehs.nih.gov

NTP Technical Report On The Toxicology And Carcinogenesis Studies Of Gallium Arsenide (Cas No. 1303-00-0) In F344/N Rats And B6c3f1 Mice (Inhalation Studies) [online]. U.S. Department Of Health And Human Services: Public Health Service: National Institutes of Health, September 2000. Dostupné online.

nobelprize.org

Nobel Lecture by Zhores Alferov at nobelprize.org, p. 6

nrel.gov

Inverted Metamorphic Multijunction (IMM) Cell Processing Instructions [online]. February 2012. Dostupné online.

optocon.de

A New Fiber Optical Thermometer and Its Application for Process Control in Strong Electric, Magnetic, and Electromagnetic Fields Archivované 2014-11-29 na Wayback Machine. optocon.de (PDF; 2,5 MB)

sav.sk

beliana.sav.sk

arzenidy. In: Encyclopaedia Beliana [online]. Bratislava: Slovenská akadémia vied, [cit. 2023-05-20]. Dostupné online.

sciencedirect.com

Performance analysis of GaAs based solar cells under gamma irradiation. Applied Surface Science, 2020-04-30, s. 145329. Dostupné online. ISSN 0169-4332. DOI: 10.1016/j.apsusc.2020.145329. (po anglicky)

seekingalpha.com

It's a GaAS: Critical Component for Cell Phone Circuits Grows in 2010 [online]. 15 December 2010. Dostupné online.

sigmaaldrich.com

Safety Data Sheet: Gallium Arsenide [online]. Sigma-Aldrich, 2015-02-28. Dostupné online.

stuba.sk

uef.fei.stuba.sk

Arzenid gália (GaAs) [online]. Bratislava: Slovenská technická univerzita : Fakulta elektrotechniky a informatiky, [cit. 2023-05-20]. Dostupné online.

techbox.sk

PROCHÁZKA, Juraj. GaN nabíjačky: Prečo prekonávajú kremíkové? [online]. 2021-02-12, [cit. 2023-05-19]. Dostupné online.

ucl.ac.uk

discovery.ucl.ac.uk

Black GaAs by Metal-Assisted Chemical Etching. ACS Applied Materials & Interfaces, 3 October 2018, s. 33434–33440. Dostupné online. ISSN 1944-8244. DOI: 10.1021/acsami.8b10370. PMID 30191706.

uspto.gov

patft.uspto.gov

"Chemical vapor deposition from single organometallic precursors" A. R. Barron, M. B. Power, A. N. MacInnes, A. F.Hepp, P. P. Jenkins Patent v USA 5300320 (1994)
"Oxidative dissolution of gallium arsenide and separation of gallium from arsenic" J. P. Coleman and B. F. Monzyk Patent v USA 4759917 (1988)

web.archive.org

Single-Crystalline Thin Film. US Department of Energy
Nanotechnology in energy applications. im.isu.edu.tw. 16 November 2005 (in Chinese) p. 24
A New Fiber Optical Thermometer and Its Application for Process Control in Strong Electric, Magnetic, and Electromagnetic Fields Archivované 2014-11-29 na Wayback Machine. optocon.de (PDF; 2,5 MB)
GaAs forms basis of tunable spintronics. compoundsemiconductor.net. September 2014

worldcat.org

Black GaAs by Metal-Assisted Chemical Etching. ACS Applied Materials & Interfaces, 3 October 2018, s. 33434–33440. Dostupné online. ISSN 1944-8244. DOI: 10.1021/acsami.8b10370. PMID 30191706.
Global Progress Toward Renewable Electricity: Tracking the Role of Solar. IEEE Journal of Photovoltaics, November 2021, s. 1335–1342. Dostupné online. ISSN 2156-3381. DOI: 10.1109/JPHOTOV.2021.3104149.
Performance analysis of GaAs based solar cells under gamma irradiation. Applied Surface Science, 2020-04-30, s. 145329. Dostupné online. ISSN 0169-4332. DOI: 10.1016/j.apsusc.2020.145329. (po anglicky)
High efficiency GaAs thin film solar cells by peeled film technology. Journal of Crystal Growth, 1978-12-01, s. 277–280. Dostupné online. ISSN 0022-0248. DOI: 10.1016/0022-0248(78)90449-9. (po anglicky)
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nature Communications, 2013-03-12, s. 1577. Dostupné online. ISSN 2041-1723. DOI: 10.1038/ncomms2583. PMID 23481385. (po anglicky)
Overview of the Current State of Gallium Arsenide-Based Solar Cells. Materials, 2021-06-04, s. 3075. ISSN 1996-1944. DOI: 10.3390/ma14113075. PMID 34199850. (po anglicky)