MRAM (Swedish Wikipedia)

Analysis of information sources in references of the Wikipedia article "MRAM" in Swedish language version.

Last modified: 03:11:47, 22 August 2026 (UTC)

Ref.Un. Ref.Website

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11techtarget.com

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11books.google.com

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8,229^th place

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11web.archive.org

1^st place

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1,293^rd place

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11nve-spintronics.com

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archive.org (Global: 6^th place; Swedish: 108^th place)

Akerman, J. (2005). ”APPLIED PHYSICS: Toward a Universal Memory”. Science 308 (5721): sid. 508–510. doi:10.1126/science.1110549. PMID 15845842. https://archive.org/details/sim_science_2005-04-22_308_5721/page/508.

books.google.com (Global: 3^rd place; Swedish: 54^th place)

Fuxi, Gan; Yang, Wang (9 februari 2015). Data Storage at the Nanoscale: Advances and Applications. CRC Press. ISBN 9789814613200. https://books.google.com/books?id=Tlm3BgAAQBAJ&dq=for+tunnel+junctions+with+an+aluminum+oxide+tunneling+barrier,+the+maximum+difference+in+resistance&pg=PA284

doi.org (Global: 2^nd place; Swedish: 16^th place)

dx.doi.org

Akerman, J. (2005). ”APPLIED PHYSICS: Toward a Universal Memory”. Science 308 (5721): sid. 508–510. doi:10.1126/science.1110549. PMID 15845842. https://archive.org/details/sim_science_2005-04-22_308_5721/page/508.
Engel, B. N.; Akerman, J.; Butcher, B.; Dave, R. W.; Deherrera, M.; Durlam, M.; Grynkewich, G.; Janesky, J.; et al. (2005). ”A 4-Mb toggle MRAM based on a novel bit and switching method”. IEEE Transactions on Magnetics 41 (1): sid. 132. doi:10.1109/TMAG.2004.840847.
Sbiaa, R.; Meng, H.; Piramanayagam, S. N. (2011). ”Materials with perpendicular magnetic anisotropy for magnetic random access memory”. Physica Status Solidi RRL 5 (12): sid. 413. doi:10.1002/pssr.201105420.

nih.gov (Global: 5^th place; Swedish: 28^th place)

ncbi.nlm.nih.gov

Akerman, J. (2005). ”APPLIED PHYSICS: Toward a Universal Memory”. Science 308 (5721): sid. 508–510. doi:10.1126/science.1110549. PMID 15845842. https://archive.org/details/sim_science_2005-04-22_308_5721/page/508.

nve-spintronics.com (Global: low place; Swedish: low place)

"How MRAM Works".

physorg.com (Global: 8,229^th place; Swedish: 7,543^rd place)

"Renesas, Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer", 1 december 2005.

techtarget.com (Global: 3,908^th place; Swedish: 5,513^th place)

”What is MRAM (Magnetoresistive random access memory)?” (på engelska). Storage. https://www.techtarget.com/searchstorage/definition/MRAM. Läst 30 oktober 2023.

umn.edu (Global: 1,293^rd place; Swedish: 1,037^th place)

license.umn.edu

”Lower Switching Current for Spin-Torque Transfer in Magnetic Storage Devices such as Magnetoresistive Random Access Memory (MRAM)”. University of Minnesota. Arkiverad från originalet den 12 oktober 2015. https://web.archive.org/web/20151012093448/http://license.umn.edu/technologies/z09007_lower-switching-current-for-spin-torque-transfer-in-magnetic-storage-devices-such-as-magnetoresistive-random-access-memory-mram. Läst 15 augusti 2011.

web.archive.org (Global: 1^st place; Swedish: 2^nd place)

”Lower Switching Current for Spin-Torque Transfer in Magnetic Storage Devices such as Magnetoresistive Random Access Memory (MRAM)”. University of Minnesota. Arkiverad från originalet den 12 oktober 2015. https://web.archive.org/web/20151012093448/http://license.umn.edu/technologies/z09007_lower-switching-current-for-spin-torque-transfer-in-magnetic-storage-devices-such-as-magnetoresistive-random-access-memory-mram. Läst 15 augusti 2011.