அலுமினியம் இண்டியம் ஆண்டிமோணைடு (Tamil Wikipedia)

Analysis of information sources in references of the Wikipedia article "அலுமினியம் இண்டியம் ஆண்டிமோணைடு" in Tamil language version.

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"The growth of AlInSb by metalorganic chemical vapor deposition". Journal of Electronic Materials 27 (6): L43–L46. 1998. doi:10.1007/s11664-998-0060-0. Bibcode: 1998JEMat..27L..43B.
"Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics 89 (11): 5815–5875. 2001. doi:10.1063/1.1368156. Bibcode: 2001JAP....89.5815V.
"Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 μm optoelectronic device applications". Journal of Applied Physics 61 (10): 4869–4876. 1987. doi:10.1063/1.338352.
"Energy gaps, charge distribution and optical properties of Al_xIn_1−xSb ternary alloys". Infrared Physics & Technology 71: 396–401. 2015. doi:10.1016/j.infrared.2015.05.011.
"Dislocation filtering by Al_xIn_1−xSb/Al_yIn_1−ySb interfaces for InSb-based devices grown on GaAs (001) substrates". Applied Physics Letters 88 (19): 191908. 2006. doi:10.1063/1.2203223.
"Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates". Journal of Applied Physics 126 (13): 134501. 2019. doi:10.1063/1.5111933. Bibcode: 2019JAP...126m4501F.
"High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors". Journal of Crystal Growth 518: 14–17. 2019. doi:10.1016/j.jcrysgro.2019.02.049. Bibcode: 2019JCrGr.518...14M.

"The growth of AlInSb by metalorganic chemical vapor deposition". Journal of Electronic Materials 27 (6): L43–L46. 1998. doi:10.1007/s11664-998-0060-0. Bibcode: 1998JEMat..27L..43B.
"Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics 89 (11): 5815–5875. 2001. doi:10.1063/1.1368156. Bibcode: 2001JAP....89.5815V.
"Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates". Journal of Applied Physics 126 (13): 134501. 2019. doi:10.1063/1.5111933. Bibcode: 2019JAP...126m4501F.
"High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors". Journal of Crystal Growth 518: 14–17. 2019. doi:10.1016/j.jcrysgro.2019.02.049. Bibcode: 2019JCrGr.518...14M.