ஆஃபினியம்(IV) ஆக்சைடு (Tamil Wikipedia)

Analysis of information sources in references of the Wikipedia article "ஆஃபினியம்(IV) ஆக்சைடு" in Tamil language version.

refsWebsite

Global rank Tamil rank

8doi.org

2^nd place

4^th place

6harvard.edu

18^th place

39^th place

1intel.com

1,118^th place

low place

1imec-int.com

low place

1ferroelectric-memory.com

low place

1ieee.org

652^nd place

776^th place

1omega.co.uk

low place

1technologyreview.com

1,943^rd place

1,903^rd place

doi.org

dx.doi.org

Table III, V. Miikkulainen (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics 113 (2): 021301–021301–101. doi:10.1063/1.4757907. Bibcode: 2013JAP...113b1301M.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B 90 (6): 064111. doi:10.1103/PhysRevB.90.064111. Bibcode: 2014PhRvB..90f4111H.
T. S. Boscke (2011). Ferroelectricity in hafnium oxide thin films. 99. பக். 102903. doi:10.1063/1.3634052. Bibcode: 2011ApPhL..99j2903B.
J.H. Choi (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science 47 (21): 7399–7416. doi:10.1007/s10853-012-6568-y. Bibcode: 2012JMatS..47.7399Z.
Wilk G. D., Wallace R. M., Anthony J. M. (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics 89 (10): 5243–5275. doi:10.1063/1.1361065. Bibcode: 2001JAP....89.5243W. , Table 1
K.-L. Lin (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics 109 (8): 084104–084104–7. doi:10.1063/1.3567915. Bibcode: 2011JAP...109h4104L.
T. S. Böscke, J. Müller, D. Bräuhaus (7 Dec 2011). "Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors". 2011 International Electron Devices Meeting (IEEE): 24.5.1–24.5.4. doi:10.1109/IEDM.2011.6131606. பன்னாட்டுத் தரப்புத்தக எண்:978-1-4577-0505-2. https://ieeexplore.ieee.org/document/6131606/.

ferroelectric-memory.com

The Ferroelectric Memory Company (8 June 2017). "World's first FeFET-based 3D NAND demonstration".

harvard.edu

adsabs.harvard.edu

Table III, V. Miikkulainen (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics 113 (2): 021301–021301–101. doi:10.1063/1.4757907. Bibcode: 2013JAP...113b1301M.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B 90 (6): 064111. doi:10.1103/PhysRevB.90.064111. Bibcode: 2014PhRvB..90f4111H.
T. S. Boscke (2011). Ferroelectricity in hafnium oxide thin films. 99. பக். 102903. doi:10.1063/1.3634052. Bibcode: 2011ApPhL..99j2903B.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science 47 (21): 7399–7416. doi:10.1007/s10853-012-6568-y. Bibcode: 2012JMatS..47.7399Z.
Wilk G. D., Wallace R. M., Anthony J. M. (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics 89 (10): 5243–5275. doi:10.1063/1.1361065. Bibcode: 2001JAP....89.5243W. , Table 1
K.-L. Lin (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics 109 (8): 084104–084104–7. doi:10.1063/1.3567915. Bibcode: 2011JAP...109h4104L.

ieee.org

ieeexplore.ieee.org

T. S. Böscke, J. Müller, D. Bräuhaus (7 Dec 2011). "Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors". 2011 International Electron Devices Meeting (IEEE): 24.5.1–24.5.4. doi:10.1109/IEDM.2011.6131606. பன்னாட்டுத் தரப்புத்தக எண்:978-1-4577-0505-2. https://ieeexplore.ieee.org/document/6131606/.

imec-int.com

Imec (7 June 2017). "Imec demonstrates breakthrough in CMOS-compatible Ferroelectric Memory".

intel.com

Intel (11 November 2007). "Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance".

omega.co.uk

Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., retrieved 2008-12-03

technologyreview.com

"Aaswath Raman | Innovators Under 35 | MIT Technology Review". August 2015. Retrieved 2015-09-02.