ஆஃபினியம் டெட்ராகுளோரைடு (Tamil Wikipedia)

Analysis of information sources in references of the Wikipedia article "ஆஃபினியம் டெட்ராகுளோரைடு" in Tamil language version.

refsWebsite
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218th place
72nd place
1,182nd place
3,402nd place
1,248th place
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18th place
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acs.org (Global: 1,248th place; Tamil: 482nd place)

pubs.acs.org

cdc.gov (Global: 218th place; Tamil: 72nd place)

doi.org (Global: 2nd place; Tamil: 4th place)

dx.doi.org

  • Spiridonov, V. P.; Akishin, P. A.; Tsirel'Nikov, V. I. (1962). "Electronographic investigation of the structure of zirconium and hafnium tetrachloride molecules in the gas phase". Journal of Structural Chemistry 3 (3): 311. doi:10.1007/BF01151485. 
  • Palko, A. A.; Ryon, A. D.; Kuhn, D. W. (1958). "The Vapor Pressures of Zirconium Tetrachloride and Hafnium Tetrachloride". The Journal of Physical Chemistry 62 (3): 319. doi:10.1021/j150561a017. 
  • Duraj, S. A.; Towns; Baker; Schupp, J. (1990). "Structure of cis-Tetrachlorobis(tetrahydrofuran)hafnium(IV)". Acta Crystallographica C46 (5): 890–2. doi:10.1107/S010827018901382X. 
  • Manzer, L. E. (1982). "Tetrahydrofuran Complexes of Selected Early Transition Metals". Inorg. Synth. 21: 135–140. doi:10.1002/9780470132524.ch31. பன்னாட்டுத் தரப்புத்தக எண்:978-0-470-13252-4. 
  • Riehl, M. E.; Wilson, S. R.; Girolami, G. S. (1993). "Synthesis, X-ray Crystal Structure, and Phosphine-Exchange Reactions of the Hafnium(III)-Hafnium(III) Dimer Hf2Cl6[P(C2H5)3]4". Inorg. Chem. 32 (2): 218–222. doi:10.1021/ic00054a017. 
  • Ahn, S.; Song, Y. S.; Yoo, B. R.; Jung, I. N. (2000). "Lewis Acid-Catalyzed Friedel−Crafts Alkylation of Ferrocene with Allylchlorosilanes". Organometallics 19 (14): 2777. doi:10.1021/om0000865. 
  • Graham, A. B.; Grigg, R.; Dunn, P. J.; Higginson, P. (2000). "Tandem 1,3-azaprotiocyclotransfer–cycloaddition reactions between aldoximes and divinyl ketone. Remarkable rate enhancement and control of cycloaddition regiochemistry by hafnium(iv) chloride". Chemical Communications (20): 2035–2036. doi:10.1039/b005389i. 
  • Choi, J. H.; Mao, Y.; Chang, J. P. (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R: Reports 72 (6): 97. doi:10.1016/j.mser.2010.12.001. 
  • John_Robertson_(physicist) (2006). "High dielectric constant gate oxides for metal oxide Si transistors". Reports on Progress in Physics 69 (2): 327–396. doi:10.1088/0034-4885/69/2/R02. Bibcode: 2006RPPh...69..327R. 

doi.org

harvard.edu (Global: 18th place; Tamil: 39th place)

adsabs.harvard.edu

patents.google.com (Global: 1,182nd place; Tamil: 3,402nd place)