காலியம் இண்டியம் ஆண்டிமோனைடு (Tamil Wikipedia)

Analysis of information sources in references of the Wikipedia article "காலியம் இண்டியம் ஆண்டிமோனைடு" in Tamil language version.

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12doi.org

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2nih.gov

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1harvard.edu

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archive.org

"Molecular beam epitaxy of GaSb and InGaSb". Journal of Crystal Growth 73 (3): 641–645. 1985. doi:10.1016/0022-0248(85)90031-4. https://archive.org/details/sim_journal-of-crystal-growth_1985-12_73_3/page/641.

doi.org

dx.doi.org

"Molecular beam epitaxy of GaSb and InGaSb". Journal of Crystal Growth 73 (3): 641–645. 1985. doi:10.1016/0022-0248(85)90031-4. https://archive.org/details/sim_journal-of-crystal-growth_1985-12_73_3/page/641.
"MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb". Journal of Crystal Growth 95 (1): 158–162. 1989. doi:10.1016/0022-0248(89)90372-2.
"Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for "virtual substrates"". Journal of Crystal Growth 225 (2): 236–243. 2001. doi:10.1016/S0022-0248(01)00843-0.
"Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics 89 (11): 5815–5875. 2001. doi:10.1063/1.1368156. Bibcode: 2001JAP....89.5815V.
"Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 μm optoelectronic device applications". Journal of Applied Physics 61 (10): 4869–4876. 1987. doi:10.1063/1.338352.
"Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 μm optoelectronic device applications". Journal of Applied Physics 61 (10): 4869–4876. 1987. doi:10.1063/1.338352.
"InAs/GaInSb superlattices as a promising material system for third generation infrared detectors". Infrared Physics & Technology 48 (1): 39–52. 2006. doi:10.1016/j.infrared.2005.01.003.
"Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires". Nature Communications (Nature Publishing Group) 10 (1): 1664. 2019. doi:10.1038/s41467-019-09606-y. பப்மெட்:30971702.
"InGaSb photodetectors using an InGaSb substrate for 2μm applications". Applied Physics Letters 85 (11): 1874–1876. 2004. doi:10.1063/1.1787893.
"Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs". IEEE Electron Device Letters 33 (7): 964–966. 2012. doi:10.1109/LED.2012.2193656.
"Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications". Journal of Applied Physics 109 (3): 033706. 2011. doi:10.1063/1.3544041.
"Temperature stable Hall effect sensors". IEEE Sensors Journal 6 (1): 106–110. 2006. doi:10.1109/JSEN.2005.860362.

harvard.edu

adsabs.harvard.edu

"Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics 89 (11): 5815–5875. 2001. doi:10.1063/1.1368156. Bibcode: 2001JAP....89.5815V.

nih.gov

pubmedcentral.nih.gov

"Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires". Nature Communications (Nature Publishing Group) 10 (1): 1664. 2019. doi:10.1038/s41467-019-09606-y. பப்மெட்:30971702.

ncbi.nlm.nih.gov

"Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires". Nature Communications (Nature Publishing Group) 10 (1): 1664. 2019. doi:10.1038/s41467-019-09606-y. பப்மெட்:30971702.