Лавинний фотодіод (Ukrainian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Лавинний фотодіод" in Ukrainian language version.

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Tarof, L. E. (1991). Planar InP/GaAs Avalanche Photodetector with Gain-Bandwidth Product in Excess of 100 GHz. Electronics Letters. 27 (1): 34—36. Bibcode:1991ElL....27...34T. doi:10.1049/el:19910023.
Wu, W.; Hawkins, A. R.; Bowers, J. E. (1997). Park, Yoon-Soo; Ramaswamy, Ramu V (ред.). Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product. Proceedings of SPIE. Optoelectronic Integrated Circuits. 3006: 36—47. Bibcode:1997SPIE.3006...38W. doi:10.1117/12.264251.
Campbell, J. C. (2007). Recent advances in Telecommunications Avalanche Photodiodes. Journal of Lightwave Technology. 25 (1): 109—121. Bibcode:2007JLwT...25..109C. doi:10.1109/JLT.2006.888481.

Tarof, L. E. (1991). Planar InP/GaAs Avalanche Photodetector with Gain-Bandwidth Product in Excess of 100 GHz. Electronics Letters. 27 (1): 34—36. Bibcode:1991ElL....27...34T. doi:10.1049/el:19910023.
Wu, W.; Hawkins, A. R.; Bowers, J. E. (1997). Park, Yoon-Soo; Ramaswamy, Ramu V (ред.). Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product. Proceedings of SPIE. Optoelectronic Integrated Circuits. 3006: 36—47. Bibcode:1997SPIE.3006...38W. doi:10.1117/12.264251.
Campbell, J. C. (2007). Recent advances in Telecommunications Avalanche Photodiodes. Journal of Lightwave Technology. 25 (1): 109—121. Bibcode:2007JLwT...25..109C. doi:10.1109/JLT.2006.888481.