Gali nitride (Vietnamese Wikipedia)

Analysis of information sources in references of the Wikipedia article "Gali nitride" in Vietnamese language version.

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acs.org

Harafuji, Kenji; Tsuchiya, Taku; Kawamura, Katsuyuki (2004). “Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal”. Appl. Phys. 96 (5): 2501. Bibcode:2004JAP....96.2501H. doi:10.1063/1.1772878.
Di Carlo, A. (2001). “Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening”. Physica status solidi (a). 183: 81–85. Bibcode:2001PSSAR.183...81D. doi:10.1002/1521-396X(200101)183:1<81::AID-PSSA81>3.0.CO;2-N.
Arakawa, Y. (2002). “Progress in GaN-based quantum dots for optoelectronics applications”. IEEE Journal of Selected Topics in Quantum Electronics. 8 (4): 823–832. doi:10.1109/JSTQE.2002.801675.
Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). “Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors”. Journal of Crystal Growth. 272 (1–4): 816–21. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

Harafuji, Kenji; Tsuchiya, Taku; Kawamura, Katsuyuki (2004). “Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal”. Appl. Phys. 96 (5): 2501. Bibcode:2004JAP....96.2501H. doi:10.1063/1.1772878.
Di Carlo, A. (2001). “Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening”. Physica status solidi (a). 183: 81–85. Bibcode:2001PSSAR.183...81D. doi:10.1002/1521-396X(200101)183:1<81::AID-PSSA81>3.0.CO;2-N.
Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). “Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors”. Journal of Crystal Growth. 272 (1–4): 816–21. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.