金屬氧化物半導體場效電晶體 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "金屬氧化物半導體場效電晶體" in Chinese language version.

refsWebsite

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6web.archive.org

1^st place

4worldcat.org

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1ieee.org

652^nd place

712^th place

1doi.org

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23^rd place

1books.google.com

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8^th place

1berkeley.edu

580^th place

642^nd place

berkeley.edu (Global: 580^th place; Chinese: 642^nd place)

www-device.eecs.berkeley.edu

For example, see Yuhua Cheng, Chenming Hu. MOSFET modeling & BSIM3 user's guide. Springer. 1999. ISBN 0-7923-8575-6. . The most recent version of the BSIM model is described in Sriramkumar V., Navid Paydavosi,Darsen Lu, Chung-Hsun Lin,Mohan Dunga, Shijing Yao, Tanvir Morshed,Ali Niknejad, and Chenming Hu. BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model (PDF). Department of EE and CS, UC Berkeley. 2012 [2012-04-01]. （原始内容 (PDF)存档于2014-07-27）.

books.google.com (Global: 3^rd place; Chinese: 8^th place)

For example, see Yuhua Cheng, Chenming Hu. MOSFET modeling & BSIM3 user's guide. Springer. 1999. ISBN 0-7923-8575-6. . The most recent version of the BSIM model is described in Sriramkumar V., Navid Paydavosi,Darsen Lu, Chung-Hsun Lin,Mohan Dunga, Shijing Yao, Tanvir Morshed,Ali Niknejad, and Chenming Hu. BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model (PDF). Department of EE and CS, UC Berkeley. 2012 [2012-04-01]. （原始内容 (PDF)存档于2014-07-27）.

doi.org (Global: 2^nd place; Chinese: 23^rd place)

This model was introduced by H Shichman and DA Hodges. Modeling and simulation of insulated-gate field-effect transistor switching circuits. IEEE Journal of Solid-state circuits. 1968, SC–3: 285–289 [2014-12-23]. doi:10.1109/JSSC.1968.1049902. （原始内容存档于2013-06-10）. and often is called the Shichman-Hodges model.

ieee.org (Global: 652^nd place; Chinese: 712^th place)

ieeexplore.ieee.org

This model was introduced by H Shichman and DA Hodges. Modeling and simulation of insulated-gate field-effect transistor switching circuits. IEEE Journal of Solid-state circuits. 1968, SC–3: 285–289 [2014-12-23]. doi:10.1109/JSSC.1968.1049902. （原始内容存档于2013-06-10）. and often is called the Shichman-Hodges model.

web.archive.org (Global: 1^st place; Chinese: 1^st place)

This model was introduced by H Shichman and DA Hodges. Modeling and simulation of insulated-gate field-effect transistor switching circuits. IEEE Journal of Solid-state circuits. 1968, SC–3: 285–289 [2014-12-23]. doi:10.1109/JSSC.1968.1049902. （原始内容存档于2013-06-10）. and often is called the Shichman-Hodges model.
For example, see Yuhua Cheng, Chenming Hu. MOSFET modeling & BSIM3 user's guide. Springer. 1999. ISBN 0-7923-8575-6. . The most recent version of the BSIM model is described in Sriramkumar V., Navid Paydavosi,Darsen Lu, Chung-Hsun Lin,Mohan Dunga, Shijing Yao, Tanvir Morshed,Ali Niknejad, and Chenming Hu. BSIM-CMG 106.1.0beta Multi-Gate MOSFET Compact Model (PDF). Department of EE and CS, UC Berkeley. 2012 [2012-04-01]. （原始内容 (PDF)存档于2014-07-27）.
C Galup-Montoro & Schneider MC. MOSFET modeling for circuit analysis and design. London/Singapore: World Scientific. 2007: 83 [2014-12-23]. ISBN 981-256-810-7. （原始内容存档于2010-01-12）.
Norbert R Malik. Electronic circuits: analysis, simulation, and design. Englewood Cliffs, NJ: Prentice Hall. 1995: 315–316 [2014-12-23]. ISBN 0-02-374910-5. （原始内容存档于2009-04-27）.
PR Gray, PJ Hurst, SH Lewis & RG Meyer. §1.5.2 p. 45. [2014-12-23]. ISBN 0-471-32168-0. （原始内容存档于2009-04-28）.
A. S. Sedra and K.C. Smith. Microelectronic circuits Fifth Edition. New York: Oxford. 2004: 552 [2014-12-23]. ISBN 0-19-514251-9. （原始内容存档于2009-02-04）.

worldcat.org (Global: 5^th place; Chinese: 12^th place)

C Galup-Montoro & Schneider MC. MOSFET modeling for circuit analysis and design. London/Singapore: World Scientific. 2007: 83 [2014-12-23]. ISBN 981-256-810-7. （原始内容存档于2010-01-12）.
Norbert R Malik. Electronic circuits: analysis, simulation, and design. Englewood Cliffs, NJ: Prentice Hall. 1995: 315–316 [2014-12-23]. ISBN 0-02-374910-5. （原始内容存档于2009-04-27）.
PR Gray, PJ Hurst, SH Lewis & RG Meyer. §1.5.2 p. 45. [2014-12-23]. ISBN 0-471-32168-0. （原始内容存档于2009-04-28）.
A. S. Sedra and K.C. Smith. Microelectronic circuits Fifth Edition. New York: Oxford. 2004: 552 [2014-12-23]. ISBN 0-19-514251-9. （原始内容存档于2009-02-04）.

金屬氧化物半導體場效電晶體 (Chinese Wikipedia)

berkeley.edu (Global: 580th place; Chinese: 642nd place)

www-device.eecs.berkeley.edu

books.google.com (Global: 3rd place; Chinese: 8th place)

doi.org (Global: 2nd place; Chinese: 23rd place)

ieee.org (Global: 652nd place; Chinese: 712th place)