功率MOSFET (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "功率MOSFET" in Chinese language version.

refsWebsite

Global rank Chinese rank

26web.archive.org

1^st place

7books.google.com

3^rd place

8^th place

5infineon.com

low place

4doi.org

2^nd place

23^rd place

3archive.org

6^th place

4^th place

3st.com

low place

8,900^th place

2harvard.edu

18^th place

57^th place

1aosmd.com

low place

1electronicdesign.com

low place

6,822^nd place

1powerelectronics.com

low place

6,468^th place

1semanticscholar.org

11^th place

332^nd place

1semi.org

low place

1businesswire.com

615^th place

1,091^st place

1patents.google.com

1,182^nd place

2,253^rd place

1icinsights.com

low place

6,977^th place

1electronics-sourcing.com

low place

1researchgate.net

120^th place

337^th place

1nasa.gov

75^th place

140^th place

1fujielectric.com

low place

1worldcat.org

5^th place

12^th place

1irf.com

low place

aosmd.com

Power MOSFET Basics (PDF). Alpha & Omega Semiconductor. [29 July 2019]. （原始内容存档 (PDF)于2020-01-10）.

archive.org

Duncan, Ben. High Performance Audio Power Amplifiers. Elsevier. 1996: 178–81. ISBN 9780080508047.
Duncan, Ben. High Performance Audio Power Amplifiers. Elsevier. 1996: 177–8, 406. ISBN 9780080508047.
Korec, Jacek. Low Voltage Power MOSFETs: Design, Performance and Applications. Springer Science+Business Media. 2011: 9–14. ISBN 978-1-4419-9320-5.

books.google.com

Irwin, J. David. The Industrial Electronics Handbook. CRC Press. 1997: 218 [2020-09-22]. ISBN 9780849383434. （原始内容存档于2020-08-03）.
Oxner, E. S. Fet Technology and Application. CRC Press. 1988: 18 [2020-09-23]. ISBN 9780824780500. （原始内容存档于2019-12-30）.
Baliga, B. Jayant. Silicon RF Power MOSFETS. World Scientific. 2005 [2020-09-23]. ISBN 9789812561213. （原始内容存档于2019-12-18）.
Asif, Saad. 5G Mobile Communications: Concepts and Technologies. CRC Press. 2018: 134 [2020-09-23]. ISBN 9780429881343. （原始内容存档于2020-08-06）.
Baliga, B. Jayant. The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor. William Andrew. 2015: xxviii, 5–11 [2020-09-23]. ISBN 9781455731534. （原始内容存档于2020-08-06）.
Emadi, Ali. Handbook of Automotive Power Electronics and Motor Drives. CRC Press. 2017: 117 [2020-10-04]. ISBN 9781420028157. （原始内容存档于2022-04-10）.
Veendrick, Harry J. M. Nanometer CMOS ICs: From Basics to ASICs. Springer. 2017: 245 [2020-10-04]. ISBN 9783319475974. （原始内容存档于2022-04-10）.

businesswire.com

International Rectifier's Alex Lidow and Tom Herman Inducted Into Engineering Hall of Fame. Business Wire. 14 September 2004 [31 July 2019]. （原始内容存档于2019-07-31）.

doi.org

Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro. Diffusion Self-Aligned MOST; A New Approach for High Speed Device. Proceedings of the 1st Conference on Solid State Devices. September 1969 [2020-09-23]. doi:10.7567/SSDM.1969.4-1. （原始内容存档于2020-09-13）.
McLintock, G. A.; Thomas, R. E. Modelling of the double-diffused MOST's with self-aligned gates. 1972 International Electron Devices Meeting. December 1972: 24–26. doi:10.1109/IEDM.1972.249241.
Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke. The Trench Power MOSFET: Part I—History, Technology, and Prospects. IEEE Transactions on Electron Devices. 23 February 2017, 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability. IEEE Transactions on Electron Devices. 2017, 64 (3): 692–712. Bibcode:2017ITED...64..692W. ISSN 0018-9383. doi:10.1109/TED.2017.2655149.

electronicdesign.com

Rethink Power Density with GaN. Electronic Design. 21 April 2017 [23 July 2019]. （原始内容存档于2020-08-01）.

electronics-sourcing.com

Carbone, James. Buyers can expect 30-week lead times and higher tags to continue for MOSFETs (PDF). Electronics Sourcing. September–October 2018: 18–19 [2020-10-04]. （原始内容存档 (PDF)于2020-10-25）.

fujielectric.com

Automotive Power MOSFETs (PDF). Fuji Electric. [10 August 2019]. （原始内容存档 (PDF)于2020-10-29）.

harvard.edu

ui.adsabs.harvard.edu

Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke. The Trench Power MOSFET: Part I—History, Technology, and Prospects. IEEE Transactions on Electron Devices. 23 February 2017, 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239.
Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability. IEEE Transactions on Electron Devices. 2017, 64 (3): 692–712. Bibcode:2017ITED...64..692W. ISSN 0018-9383. doi:10.1109/TED.2017.2655149.

icinsights.com

Power Transistor Market Will Cross $13.0 Billion in 2011. IC Insights. June 21, 2011 [15 October 2019]. （原始内容存档于2019-10-15）.

infineon.com

IRLZ24N, 55V N-Channel Power MOSFET, TO-220AB package; Infineon.. [2020-09-22]. （原始内容存档于2018-06-25）.
MOSFET. Infineon Technologies. [24 December 2019]. （原始内容存档于2020-11-05）.
Infineon EiceDRIVER gate driver ICs (PDF). Infineon. August 2019 [26 December 2019]. （原始内容存档 (PDF)于2020-08-09）.
Infineon Solutions for Transportation (PDF). Infineon. June 2013 [23 December 2019]. （原始内容 (PDF)存档于2022-03-19）.
HITFETs: Smart, Protected MOSFETs (PDF). Infineon. [23 December 2019]. （原始内容存档 (PDF)于2020-10-06）.

irf.com

存档副本 (PDF). [2020-11-29]. （原始内容存档 (PDF)于2020-10-20）.

nasa.gov

spinoff.nasa.gov

CMOS Sensors Enable Phone Cameras, HD Video. NASA Spinoff. NASA. [6 November 2019]. （原始内容存档于2020-12-14）.

patents.google.com

US Patent 4,754,310

powerelectronics.com

Advances in Discrete Semiconductors March On. Power Electronics Technology (Informa). September 2005: 52–6 [31 July 2019]. （原始内容存档 (PDF)于2006-03-22）.

researchgate.net

Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A.; Siemieniec, Ralf; Rutter, Phil; Kawaguchi, Yusuke. The Trench Power MOSFET: Part I—History, Technology, and Prospects. IEEE Transactions on Electron Devices. 23 February 2017, 64 (3): 674–691. Bibcode:2017ITED...64..674W. doi:10.1109/TED.2017.2653239.

semanticscholar.org

Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro. Diffusion Self-Aligned MOST; A New Approach for High Speed Device. Proceedings of the 1st Conference on Solid State Devices. September 1969 [2020-09-23]. doi:10.7567/SSDM.1969.4-1. （原始内容存档于2020-09-13）.

semi.org

SEMI Award for North America. SEMI. [5 August 2016]. （原始内容存档于2016-08-05）. |url-status=和|dead-url=只需其一 (帮助)

st.com

RF DMOS Transistors. STMicroelectronics. [22 December 2019]. （原始内容存档于2020-05-14）.
AN1256: Application note – High-power RF MOSFET targets VHF applications (PDF). 意法半導體. July 2007 [22 December 2019]. （原始内容存档 (PDF)于2020-10-25）.

blog.st.com

MDmesh: 20 Years of Superjunction STPOWER MOSFETs, A Story About Innovation. STMicroelectronics. 11 September 2019 [2 November 2019]. （原始内容存档于2019-11-02）.

web.archive.org

IRLZ24N, 55V N-Channel Power MOSFET, TO-220AB package; Infineon.. [2020-09-22]. （原始内容存档于2018-06-25）.
Irwin, J. David. The Industrial Electronics Handbook. CRC Press. 1997: 218 [2020-09-22]. ISBN 9780849383434. （原始内容存档于2020-08-03）.
Power MOSFET Basics (PDF). Alpha & Omega Semiconductor. [29 July 2019]. （原始内容存档 (PDF)于2020-01-10）.
Rethink Power Density with GaN. Electronic Design. 21 April 2017 [23 July 2019]. （原始内容存档于2020-08-01）.
Oxner, E. S. Fet Technology and Application. CRC Press. 1988: 18 [2020-09-23]. ISBN 9780824780500. （原始内容存档于2019-12-30）.
Advances in Discrete Semiconductors March On. Power Electronics Technology (Informa). September 2005: 52–6 [31 July 2019]. （原始内容存档 (PDF)于2006-03-22）.
Tarui, Y.; Hayashi, Y.; Sekigawa, Toshihiro. Diffusion Self-Aligned MOST; A New Approach for High Speed Device. Proceedings of the 1st Conference on Solid State Devices. September 1969 [2020-09-23]. doi:10.7567/SSDM.1969.4-1. （原始内容存档于2020-09-13）.
Baliga, B. Jayant. Silicon RF Power MOSFETS. World Scientific. 2005 [2020-09-23]. ISBN 9789812561213. （原始内容存档于2019-12-18）.
Asif, Saad. 5G Mobile Communications: Concepts and Technologies. CRC Press. 2018: 134 [2020-09-23]. ISBN 9780429881343. （原始内容存档于2020-08-06）.
SEMI Award for North America. SEMI. [5 August 2016]. （原始内容存档于2016-08-05）. |url-status=和|dead-url=只需其一 (帮助)
International Rectifier's Alex Lidow and Tom Herman Inducted Into Engineering Hall of Fame. Business Wire. 14 September 2004 [31 July 2019]. （原始内容存档于2019-07-31）.
Baliga, B. Jayant. The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor. William Andrew. 2015: xxviii, 5–11 [2020-09-23]. ISBN 9781455731534. （原始内容存档于2020-08-06）.
MDmesh: 20 Years of Superjunction STPOWER MOSFETs, A Story About Innovation. STMicroelectronics. 11 September 2019 [2 November 2019]. （原始内容存档于2019-11-02）.
Power Transistor Market Will Cross $13.0 Billion in 2011. IC Insights. June 21, 2011 [15 October 2019]. （原始内容存档于2019-10-15）.
Carbone, James. Buyers can expect 30-week lead times and higher tags to continue for MOSFETs (PDF). Electronics Sourcing. September–October 2018: 18–19 [2020-10-04]. （原始内容存档 (PDF)于2020-10-25）.
MOSFET. Infineon Technologies. [24 December 2019]. （原始内容存档于2020-11-05）.
Infineon EiceDRIVER gate driver ICs (PDF). Infineon. August 2019 [26 December 2019]. （原始内容存档 (PDF)于2020-08-09）.
RF DMOS Transistors. STMicroelectronics. [22 December 2019]. （原始内容存档于2020-05-14）.
AN1256: Application note – High-power RF MOSFET targets VHF applications (PDF). 意法半導體. July 2007 [22 December 2019]. （原始内容存档 (PDF)于2020-10-25）.
Emadi, Ali. Handbook of Automotive Power Electronics and Motor Drives. CRC Press. 2017: 117 [2020-10-04]. ISBN 9781420028157. （原始内容存档于2022-04-10）.
Infineon Solutions for Transportation (PDF). Infineon. June 2013 [23 December 2019]. （原始内容 (PDF)存档于2022-03-19）.
HITFETs: Smart, Protected MOSFETs (PDF). Infineon. [23 December 2019]. （原始内容存档 (PDF)于2020-10-06）.
CMOS Sensors Enable Phone Cameras, HD Video. NASA Spinoff. NASA. [6 November 2019]. （原始内容存档于2020-12-14）.
Veendrick, Harry J. M. Nanometer CMOS ICs: From Basics to ASICs. Springer. 2017: 245 [2020-10-04]. ISBN 9783319475974. （原始内容存档于2022-04-10）.
Automotive Power MOSFETs (PDF). Fuji Electric. [10 August 2019]. （原始内容存档 (PDF)于2020-10-29）.
存档副本 (PDF). [2020-11-29]. （原始内容存档 (PDF)于2020-10-20）.

worldcat.org

Williams, R. K.; Darwish, M. N.; Blanchard, R. A.; Siemieniec, R.; Rutter, P.; Kawaguchi, Y. The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, Reliability. IEEE Transactions on Electron Devices. 2017, 64 (3): 692–712. Bibcode:2017ITED...64..692W. ISSN 0018-9383. doi:10.1109/TED.2017.2655149.