半导体材料 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "半导体材料" in Chinese language version.

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20doi.org

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12harvard.edu

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11web.archive.org

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6semanticscholar.org

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5books.google.com

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5nih.gov

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3matweb.com

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2handle.net

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1ioffe.ru

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1archive.org

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1aber.ac.uk

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1caltech.edu

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1worldcat.org

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1himani-arora-ha.github.io

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1tandfonline.com

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1mos2crystals.com

low place

1ieee.org

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1arxiv.org

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aber.ac.uk

pure.aber.ac.uk

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.

archive.org

Dorf, Richard. The Electrical Engineering Handbook. CRC Press. 1993: 2235–2236. ISBN 0-8493-0185-8.

arxiv.org

Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.

books.google.com

Safa O. Kasap; Peter Capper. Springer handbook of electronic and photonic materials. Springer. 2006: 54,327. ISBN 978-0-387-26059-4.
Madelung, O. Semiconductors: Data Handbook. Birkhäuser. 2004: 1 [2024-02-20]. ISBN 978-3-540-40488-0. （原始内容存档于2023-05-16）.
Claus F. Klingshirn. Semiconductor optics. Springer. 1997: 127. ISBN 978-3-540-61687-0.
B. G. Yacobi Semiconductor materials: an introduction to basic principles （页面存档备份，存于互联网档案馆） Springer, 2003, ISBN 0-306-47361-5
HODES; Ebooks Corporation. Chemical Solution Deposition of Semiconductor Films. CRC Press. 8 October 2002: 319– [28 June 2011]. ISBN 978-0-8247-4345-1.

caltech.edu

authors.library.caltech.edu

Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn₃P₂ (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.

doi.org

S.H. Groves, C.R. Pidgeon, A.W. Ewald, R.J. Wagner Journal of Physics and Chemistry of Solids, Volume 31, Issue 9, September 1970, Pages 2031-2049 (1970). Interband magnetoreflection of α-Sn.
Abass, A. K.; Ahmad, N. H. Indirect band gap investigation of orthorhombic single crystals of sulfur. Journal of Physics and Chemistry of Solids. 1986, 47 (2): 143. Bibcode:1986JPCS...47..143A. doi:10.1016/0022-3697(86)90123-X.
Todorov, T. Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material. Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.
Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.
Patel, Malkeshkumar; Indrajit Mukhopadhyay; Abhijit Ray. Annealing influence over structural and optical properties of sprayed SnS thin films. Optical Materials. 26 May 2013, 35 (9): 1693–1699. Bibcode:2013OptMa..35.1693P. doi:10.1016/j.optmat.2013.04.034.
Burton, Lee A.; Whittles, Thomas J.; Hesp, David; Linhart, Wojciech M.; Skelton, Jonathan M.; Hou, Bo; Webster, Richard F.; O'Dowd, Graeme; Reece, Christian; Cherns, David; Fermin, David J.; Veal, Tim D.; Dhanak, Vin R.; Walsh, Aron. Electronic and optical properties of single crystal SnS2: An earth-abundant disulfide photocatalyst. Journal of Materials Chemistry A. 2016, 4 (4): 1312–1318. doi:10.1039/C5TA08214E. hdl:10044/1/41359 .
Haacke, G.; Castellion, G. A. Preparation and Semiconducting Properties of Cd3P2. Journal of Applied Physics. 1964, 35 (8): 2484–2487. Bibcode:1964JAP....35.2484H. doi:10.1063/1.1702886.
Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn₃P₂ (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.
Botha, J. R.; Scriven, G. J.; Engelbrecht, J. A. A.; Leitch, A. W. R. Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2. Journal of Applied Physics. 1999, 86 (10): 5614–5618. Bibcode:1999JAP....86.5614B. doi:10.1063/1.371569.
Rahimi, N.; Pax, R. A.; MacA. Gray, E. Review of functional titanium oxides. I: TiO2 and its modifications. Progress in Solid State Chemistry. 2016, 44 (3): 86–105. doi:10.1016/j.progsolidstchem.2016.07.002.
O. Madelung; U. Rössler; M. Schulz (编). Cuprous oxide (Cu2O) band structure, band energies. Landolt-Börnstein – Group III Condensed Matter. Numerical Data and Functional Relationships in Science and Technology. Landolt-Börnstein - Group III Condensed Matter. 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I. 1998: 1–4. ISBN 978-3-540-64583-2. doi:10.1007/10681727_62.
Shin, S.; Suga, S.; Taniguchi, M.; Fujisawa, M.; Kanzaki, H.; Fujimori, A.; Daimon, H.; Ueda, Y.; Kosuge, K. Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO 2, V 6 O 13, and V 2 O 3. Physical Review B. 1990, 41 (8): 4993–5009. Bibcode:1990PhRvB..41.4993S. PMID 9994356. doi:10.1103/physrevb.41.4993.
Sinha, Sapna. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nature Communications. 2020, 11 (1): 823. Bibcode:2020NatCo..11..823S. PMC 7010709 . PMID 32041958. S2CID 256633781. doi:10.1038/s41467-020-14481-z.
Kobayashi, K.; Yamauchi, J. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. Physical Review B. 1995, 51 (23): 17085–17095. Bibcode:1995PhRvB..5117085K. PMID 9978722. doi:10.1103/PhysRevB.51.17085.
Kumar, Manish; Sharma, Anjna; Maurya, Indresh Kumar; Thakur, Alpana; Kumar, Sunil. Synthesis of ultra small iron oxide and doped iron oxide nanostructures and their antimicrobial activities. Journal of Taibah University for Science. 2019, 13: 280–285 [2024-02-20]. S2CID 139826266. doi:10.1080/16583655.2019.1565437 . （原始内容存档于2023-05-11）.
Arumona Edward Arumona; Amah A N. Density Functional Theory Calculation of Band Gap of Iron (II) disulfide and Tellurium. Advanced Journal of Graduate Research. 2018, 3: 41–46. doi:10.21467/ajgr.3.1.41-46 .
Prashant K Sarswat; Michael L Free. Enhanced Photoelectrochemical Response from Copper Antimony Zinc Sulfide Thin Films on Transparent Conducting Electrode. International Journal of Photoenergy. 2013, 2013: 1–7. doi:10.1155/2013/154694 .
Trukhan, V. M.; Izotov, A. D.; Shoukavaya, T. V. Compounds and solid solutions of the Zn-Cd-P-As system in semiconductor electronics. Inorganic Materials. 2014, 50 (9): 868–873. S2CID 94409384. doi:10.1134/S0020168514090143.
Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.
Cisowski, J. Level Ordering in II₃-V₂ Semiconducting Compounds. Physica Status Solidi B. 1982, 111 (1): 289–293. Bibcode:1982PSSBR.111..289C. doi:10.1002/pssb.2221110132.

handle.net

hdl.handle.net

Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.
Burton, Lee A.; Whittles, Thomas J.; Hesp, David; Linhart, Wojciech M.; Skelton, Jonathan M.; Hou, Bo; Webster, Richard F.; O'Dowd, Graeme; Reece, Christian; Cherns, David; Fermin, David J.; Veal, Tim D.; Dhanak, Vin R.; Walsh, Aron. Electronic and optical properties of single crystal SnS2: An earth-abundant disulfide photocatalyst. Journal of Materials Chemistry A. 2016, 4 (4): 1312–1318. doi:10.1039/C5TA08214E. hdl:10044/1/41359 .

harvard.edu

ui.adsabs.harvard.edu

Abass, A. K.; Ahmad, N. H. Indirect band gap investigation of orthorhombic single crystals of sulfur. Journal of Physics and Chemistry of Solids. 1986, 47 (2): 143. Bibcode:1986JPCS...47..143A. doi:10.1016/0022-3697(86)90123-X.
Todorov, T. Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material. Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.
Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.
Patel, Malkeshkumar; Indrajit Mukhopadhyay; Abhijit Ray. Annealing influence over structural and optical properties of sprayed SnS thin films. Optical Materials. 26 May 2013, 35 (9): 1693–1699. Bibcode:2013OptMa..35.1693P. doi:10.1016/j.optmat.2013.04.034.
Haacke, G.; Castellion, G. A. Preparation and Semiconducting Properties of Cd3P2. Journal of Applied Physics. 1964, 35 (8): 2484–2487. Bibcode:1964JAP....35.2484H. doi:10.1063/1.1702886.
Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn₃P₂ (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.
Botha, J. R.; Scriven, G. J.; Engelbrecht, J. A. A.; Leitch, A. W. R. Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2. Journal of Applied Physics. 1999, 86 (10): 5614–5618. Bibcode:1999JAP....86.5614B. doi:10.1063/1.371569.
Shin, S.; Suga, S.; Taniguchi, M.; Fujisawa, M.; Kanzaki, H.; Fujimori, A.; Daimon, H.; Ueda, Y.; Kosuge, K. Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO 2, V 6 O 13, and V 2 O 3. Physical Review B. 1990, 41 (8): 4993–5009. Bibcode:1990PhRvB..41.4993S. PMID 9994356. doi:10.1103/physrevb.41.4993.
Sinha, Sapna. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nature Communications. 2020, 11 (1): 823. Bibcode:2020NatCo..11..823S. PMC 7010709 . PMID 32041958. S2CID 256633781. doi:10.1038/s41467-020-14481-z.
Kobayashi, K.; Yamauchi, J. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. Physical Review B. 1995, 51 (23): 17085–17095. Bibcode:1995PhRvB..5117085K. PMID 9978722. doi:10.1103/PhysRevB.51.17085.
Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.
Cisowski, J. Level Ordering in II₃-V₂ Semiconducting Compounds. Physica Status Solidi B. 1982, 111 (1): 289–293. Bibcode:1982PSSBR.111..289C. doi:10.1002/pssb.2221110132.

himani-arora-ha.github.io

Arora, Himani. Charge transport in two-dimensional materials and their electronic applications (PDF). Doctoral Dissertation. 2020 [July 1, 2021]. （原始内容存档 (PDF)于2024-01-05）.

ieee.org

ieeexplore.ieee.org

Temperature Dependence of Spectroscopic Performance of Thallium Bromide X- and Gamma-Ray Detectors. [2024-02-20]. （原始内容存档于2019-06-18）.

ioffe.ru

NSM Archive - Physical Properties of Semiconductors. www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.

matweb.com

Tin, Sn. www.matweb.com. [2024-02-20]. （原始内容存档于2017-12-01）.
Boron nitride nanotube. www.matweb.com. [2024-02-20]. （原始内容存档于2024-02-20）.
Lead(II) sulfide. www.matweb.com.

mos2crystals.com

Arsenic sulfide (As2S3). [2024-02-20]. （原始内容存档于2018-10-07）.

nih.gov

ncbi.nlm.nih.gov

Todorov, T. Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material. Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.
Shin, S.; Suga, S.; Taniguchi, M.; Fujisawa, M.; Kanzaki, H.; Fujimori, A.; Daimon, H.; Ueda, Y.; Kosuge, K. Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO 2, V 6 O 13, and V 2 O 3. Physical Review B. 1990, 41 (8): 4993–5009. Bibcode:1990PhRvB..41.4993S. PMID 9994356. doi:10.1103/physrevb.41.4993.
Sinha, Sapna. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nature Communications. 2020, 11 (1): 823. Bibcode:2020NatCo..11..823S. PMC 7010709 . PMID 32041958. S2CID 256633781. doi:10.1038/s41467-020-14481-z.
Kobayashi, K.; Yamauchi, J. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. Physical Review B. 1995, 51 (23): 17085–17095. Bibcode:1995PhRvB..5117085K. PMID 9978722. doi:10.1103/PhysRevB.51.17085.
Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.

semanticscholar.org

api.semanticscholar.org

Todorov, T. Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material. Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.
Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.
Sinha, Sapna. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nature Communications. 2020, 11 (1): 823. Bibcode:2020NatCo..11..823S. PMC 7010709 . PMID 32041958. S2CID 256633781. doi:10.1038/s41467-020-14481-z.
Kumar, Manish; Sharma, Anjna; Maurya, Indresh Kumar; Thakur, Alpana; Kumar, Sunil. Synthesis of ultra small iron oxide and doped iron oxide nanostructures and their antimicrobial activities. Journal of Taibah University for Science. 2019, 13: 280–285 [2024-02-20]. S2CID 139826266. doi:10.1080/16583655.2019.1565437 . （原始内容存档于2023-05-11）.
Trukhan, V. M.; Izotov, A. D.; Shoukavaya, T. V. Compounds and solid solutions of the Zn-Cd-P-As system in semiconductor electronics. Inorganic Materials. 2014, 50 (9): 868–873. S2CID 94409384. doi:10.1134/S0020168514090143.
Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.

tandfonline.com

Kumar, Manish; Sharma, Anjna; Maurya, Indresh Kumar; Thakur, Alpana; Kumar, Sunil. Synthesis of ultra small iron oxide and doped iron oxide nanostructures and their antimicrobial activities. Journal of Taibah University for Science. 2019, 13: 280–285 [2024-02-20]. S2CID 139826266. doi:10.1080/16583655.2019.1565437 . （原始内容存档于2023-05-11）.

web.archive.org

NSM Archive - Physical Properties of Semiconductors. www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.
Tin, Sn. www.matweb.com. [2024-02-20]. （原始内容存档于2017-12-01）.
Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.
Boron nitride nanotube. www.matweb.com. [2024-02-20]. （原始内容存档于2024-02-20）.
Madelung, O. Semiconductors: Data Handbook. Birkhäuser. 2004: 1 [2024-02-20]. ISBN 978-3-540-40488-0. （原始内容存档于2023-05-16）.
Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn₃P₂ (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.
Arora, Himani. Charge transport in two-dimensional materials and their electronic applications (PDF). Doctoral Dissertation. 2020 [July 1, 2021]. （原始内容存档 (PDF)于2024-01-05）.
B. G. Yacobi Semiconductor materials: an introduction to basic principles （页面存档备份，存于互联网档案馆） Springer, 2003, ISBN 0-306-47361-5
Kumar, Manish; Sharma, Anjna; Maurya, Indresh Kumar; Thakur, Alpana; Kumar, Sunil. Synthesis of ultra small iron oxide and doped iron oxide nanostructures and their antimicrobial activities. Journal of Taibah University for Science. 2019, 13: 280–285 [2024-02-20]. S2CID 139826266. doi:10.1080/16583655.2019.1565437 . （原始内容存档于2023-05-11）.
Arsenic sulfide (As2S3). [2024-02-20]. （原始内容存档于2018-10-07）.
Temperature Dependence of Spectroscopic Performance of Thallium Bromide X- and Gamma-Ray Detectors. [2024-02-20]. （原始内容存档于2019-06-18）.

worldcat.org

Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn₃P₂ (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.