四碲代钒酸亚铜 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "四碲代钒酸亚铜" in Chinese language version.

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5^th place

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23^rd place

2,020^th place

445^th place

low place

7,185^th place

doi.org

A. J. Hong, C. L. Yuan, G. Gu, J.-M. Liu. Novel p-type thermoelectric materials Cu 3 MCh 4 (M = V, Nb, Ta; Ch = Se, Te): high band-degeneracy. Journal of Materials Chemistry A. 2017, 5 (20): 9785–9792 [2020-04-28]. ISSN 2050-7488. doi:10.1039/C7TA02178J （英语）.
Xiao-Peng Liu, Zhen-Zhen Feng, Shu-Ping Guo, Yi Xia, Yongsheng Zhang. Promising thermoelectric materials of Cu 3 VX 4 (X=S, Se, Te): A Cu-V-X framework plus void tunnels. International Journal of Modern Physics C. 2019-08, 30 (08): 1950045 [2020-04-28]. ISSN 0129-1831. doi:10.1142/S0129183119500451 （英语）.

A. J. Hong, C. L. Yuan, G. Gu, J.-M. Liu. Novel p-type thermoelectric materials Cu 3 MCh 4 (M = V, Nb, Ta; Ch = Se, Te): high band-degeneracy. Journal of Materials Chemistry A. 2017, 5 (20): 9785–9792 [2020-04-28]. ISSN 2050-7488. doi:10.1039/C7TA02178J （英语）.
Xiao-Peng Liu, Zhen-Zhen Feng, Shu-Ping Guo, Yi Xia, Yongsheng Zhang. Promising thermoelectric materials of Cu 3 VX 4 (X=S, Se, Te): A Cu-V-X framework plus void tunnels. International Journal of Modern Physics C. 2019-08, 30 (08): 1950045 [2020-04-28]. ISSN 0129-1831. doi:10.1142/S0129183119500451 （英语）.

Xiao-Peng Liu, Zhen-Zhen Feng, Shu-Ping Guo, Yi Xia, Yongsheng Zhang. Promising thermoelectric materials of Cu 3 VX 4 (X=S, Se, Te): A Cu-V-X framework plus void tunnels. International Journal of Modern Physics C. 2019-08, 30 (08): 1950045 [2020-04-28]. ISSN 0129-1831. doi:10.1142/S0129183119500451 （英语）.