幾何二極體 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "幾何二極體" in Chinese language version.

refsWebsite

Global rank Chinese rank

17doi.org

2^nd place

23^rd place

15worldcat.org

5^th place

12^th place

13harvard.edu

18^th place

57^th place

5web.archive.org

1^st place

4semanticscholar.org

11^th place

332^nd place

4sciencedirect.com

149^th place

292^nd place

3nih.gov

4^th place

5^th place

1cern.ch

1,959^th place

2,362^nd place

1arxiv.org

69^th place

254^th place

1sciencemag.org

857^th place

506^th place

1rsc.org

2,020^th place

445^th place

1nature.com

234^th place

227^th place

arxiv.org

Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.

cern.ch

cds.cern.ch

Sze, S.M.; Ng, Kwok K. Physics of Semiconductor Devices. 2006-04-10. ISBN 9780470068328. doi:10.1002/0470068329 （英语）.

doi.org

Gall, Daniel. Electron mean free path in elemental metals. Journal of Applied Physics. 2016-02-23, 119 (8): 085101. Bibcode:2016JAP...119h5101G. ISSN 0021-8979. doi:10.1063/1.4942216.
Sze, S.M.; Ng, Kwok K. Physics of Semiconductor Devices. 2006-04-10. ISBN 9780470068328. doi:10.1002/0470068329 （英语）.
Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Umansky, V.; Heiblum, M.; Levinson, Y.; Smet, J.; Nübler, J.; Dolev, M. MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth. International Conference on Molecular Beam Epitaxy (MBE-XV). 2009-03-15, 311 (7): 1658–1661 [2022-06-13]. Bibcode:2009JCrGr.311.1658U. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2008.09.151. （原始内容存档于2022-02-18）（英语）.
Zhu, Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret. Graphene geometric diodes for terahertz rectennas. Journal of Physics D: Applied Physics. 2013-04-15, 46 (18): 185101. Bibcode:2013JPhD...46r5101Z. ISSN 0022-3727. doi:10.1088/0022-3727/46/18/185101.
Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Lau, Bryan; Kedem, Ofer; Schwabacher, James; Kwasnieski, Daniel; Weiss, Emily A. An introduction to ratchets in chemistry and biology. Materials Horizons. 2017-05-09, 4 (3): 310–318 [2022-06-14]. ISSN 2051-6355. doi:10.1039/C7MH00062F. （原始内容存档于2022-06-19）（英语）.
Lau, Bryan; Kedem, Ofer. Electron ratchets: State of the field and future challenges. The Journal of Chemical Physics. 2020-05-22, 152 (20): 200901. Bibcode:2020JChPh.152t0901L. ISSN 0021-9606. PMID 32486653. doi:10.1063/5.0009561 .
Song, A. M.; Lorke, A.; Kriele, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier. Physical Review Letters. 1998-04-27, 80 (17): 3831–3834. Bibcode:1998PhRvL..80.3831S. ISSN 0031-9007. doi:10.1103/physrevlett.80.3831.
Linke, H; Sheng, W; Löfgren, A; Xu, Hongqi; Omling, P; Lindelof, P. E. A quantum dot ratchet: Experiment and theory. Europhysics Letters (EPL). 1998-11-01, 44 (3): 341–347. Bibcode:1998EL.....44..341L. ISSN 0295-5075. doi:10.1209/epl/i1998-00562-1 （英语）.
Song, A.M. Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry. Applied Physics A. 2002-08-01, 75 (2): 229–235. Bibcode:2002ApPhA..75..229S. ISSN 1432-0630. S2CID 94413242. doi:10.1007/s003390201334 （英语）.
Lorke, A; Wimmer, S; Jager, B; Kotthaus, J. P; Wegscheider, W; Bichler, M. Far-infrared and transport properties of antidot arrays with broken symmetry. Physica B: Condensed Matter. 1998-06-17,. 249-251 (1–4): 312–316. Bibcode:1998PhyB..249..312L. ISSN 0921-4526. doi:10.1016/S0921-4526(98)00121-5 （英语）.
Song, A. M.; Manus, S.; Streibl, M.; Lorke, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. A nonlinear transport device with no intrinsic threshold. Superlattices and Microstructures. 1999-01-01, 25 (1): 269–272. Bibcode:1999SuMi...25..269S. ISSN 0749-6036. doi:10.1006/spmi.1998.0646 （英语）.
Song, A. M.; Omling, P.; Samuelson, L.; Seifert, W.; Shorubalko, I.; Zirath, H. Room-temperature and 50 GHz operation of a functional nanomaterial. Applied Physics Letters. 2001-08-22, 79 (9): 1357–1359. Bibcode:2001ApPhL..79.1357S. ISSN 0003-6951. doi:10.1063/1.1398324.
Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin. Graphene ballistic nano-rectifier with very high responsivity. Nature Communications. 2016-05-31, 7 (1): 11670. Bibcode:2016NatCo...711670A. ISSN 2041-1723. PMC 4895026 . PMID 27241162. doi:10.1038/ncomms11670 （英语）.
Zhang, Jiawei; Brownless, Joseph; Song, Aimin. High Performance Graphene Ballistic Rectifiers for THz detection. 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THZ). September 2019: 1–2. ISBN 978-1-5386-8285-2. S2CID 204816235. doi:10.1109/IRMMW-THz.2019.8874198.
Nguyen, Van Huy; Nguyen, Dinh Cong; Kumar, Sunil; Kim, Minwook; Kang, Dongwoon; Lee, Yeonjae; Nasir, Naila; Rehman, Malik Abdul; Bach, Thi Phuong Anh; Jung, Jongwan; Seo, Yongho. Optimum design for the ballistic diode based on graphene field-effect transistors. npj 2D Materials and Applications. 2021-12-02, 5 (1): 1–8 [2022-06-14]. ISSN 2397-7132. doi:10.1038/s41699-021-00269-2. （原始内容存档于2021-12-16）（英语）.

harvard.edu

ui.adsabs.harvard.edu

Gall, Daniel. Electron mean free path in elemental metals. Journal of Applied Physics. 2016-02-23, 119 (8): 085101. Bibcode:2016JAP...119h5101G. ISSN 0021-8979. doi:10.1063/1.4942216.
Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Umansky, V.; Heiblum, M.; Levinson, Y.; Smet, J.; Nübler, J.; Dolev, M. MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth. International Conference on Molecular Beam Epitaxy (MBE-XV). 2009-03-15, 311 (7): 1658–1661 [2022-06-13]. Bibcode:2009JCrGr.311.1658U. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2008.09.151. （原始内容存档于2022-02-18）（英语）.
Zhu, Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret. Graphene geometric diodes for terahertz rectennas. Journal of Physics D: Applied Physics. 2013-04-15, 46 (18): 185101. Bibcode:2013JPhD...46r5101Z. ISSN 0022-3727. doi:10.1088/0022-3727/46/18/185101.
Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Lau, Bryan; Kedem, Ofer. Electron ratchets: State of the field and future challenges. The Journal of Chemical Physics. 2020-05-22, 152 (20): 200901. Bibcode:2020JChPh.152t0901L. ISSN 0021-9606. PMID 32486653. doi:10.1063/5.0009561 .
Song, A. M.; Lorke, A.; Kriele, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier. Physical Review Letters. 1998-04-27, 80 (17): 3831–3834. Bibcode:1998PhRvL..80.3831S. ISSN 0031-9007. doi:10.1103/physrevlett.80.3831.
Linke, H; Sheng, W; Löfgren, A; Xu, Hongqi; Omling, P; Lindelof, P. E. A quantum dot ratchet: Experiment and theory. Europhysics Letters (EPL). 1998-11-01, 44 (3): 341–347. Bibcode:1998EL.....44..341L. ISSN 0295-5075. doi:10.1209/epl/i1998-00562-1 （英语）.
Song, A.M. Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry. Applied Physics A. 2002-08-01, 75 (2): 229–235. Bibcode:2002ApPhA..75..229S. ISSN 1432-0630. S2CID 94413242. doi:10.1007/s003390201334 （英语）.
Lorke, A; Wimmer, S; Jager, B; Kotthaus, J. P; Wegscheider, W; Bichler, M. Far-infrared and transport properties of antidot arrays with broken symmetry. Physica B: Condensed Matter. 1998-06-17,. 249-251 (1–4): 312–316. Bibcode:1998PhyB..249..312L. ISSN 0921-4526. doi:10.1016/S0921-4526(98)00121-5 （英语）.
Song, A. M.; Manus, S.; Streibl, M.; Lorke, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. A nonlinear transport device with no intrinsic threshold. Superlattices and Microstructures. 1999-01-01, 25 (1): 269–272. Bibcode:1999SuMi...25..269S. ISSN 0749-6036. doi:10.1006/spmi.1998.0646 （英语）.
Song, A. M.; Omling, P.; Samuelson, L.; Seifert, W.; Shorubalko, I.; Zirath, H. Room-temperature and 50 GHz operation of a functional nanomaterial. Applied Physics Letters. 2001-08-22, 79 (9): 1357–1359. Bibcode:2001ApPhL..79.1357S. ISSN 0003-6951. doi:10.1063/1.1398324.
Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin. Graphene ballistic nano-rectifier with very high responsivity. Nature Communications. 2016-05-31, 7 (1): 11670. Bibcode:2016NatCo...711670A. ISSN 2041-1723. PMC 4895026 . PMID 27241162. doi:10.1038/ncomms11670 （英语）.

nature.com

Nguyen, Van Huy; Nguyen, Dinh Cong; Kumar, Sunil; Kim, Minwook; Kang, Dongwoon; Lee, Yeonjae; Nasir, Naila; Rehman, Malik Abdul; Bach, Thi Phuong Anh; Jung, Jongwan; Seo, Yongho. Optimum design for the ballistic diode based on graphene field-effect transistors. npj 2D Materials and Applications. 2021-12-02, 5 (1): 1–8 [2022-06-14]. ISSN 2397-7132. doi:10.1038/s41699-021-00269-2. （原始内容存档于2021-12-16）（英语）.

nih.gov

ncbi.nlm.nih.gov

Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Lau, Bryan; Kedem, Ofer. Electron ratchets: State of the field and future challenges. The Journal of Chemical Physics. 2020-05-22, 152 (20): 200901. Bibcode:2020JChPh.152t0901L. ISSN 0021-9606. PMID 32486653. doi:10.1063/5.0009561 .
Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin. Graphene ballistic nano-rectifier with very high responsivity. Nature Communications. 2016-05-31, 7 (1): 11670. Bibcode:2016NatCo...711670A. ISSN 2041-1723. PMC 4895026 . PMID 27241162. doi:10.1038/ncomms11670 （英语）.

rsc.org

pubs.rsc.org

Lau, Bryan; Kedem, Ofer; Schwabacher, James; Kwasnieski, Daniel; Weiss, Emily A. An introduction to ratchets in chemistry and biology. Materials Horizons. 2017-05-09, 4 (3): 310–318 [2022-06-14]. ISSN 2051-6355. doi:10.1039/C7MH00062F. （原始内容存档于2022-06-19）（英语）.

sciencedirect.com

Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Umansky, V.; Heiblum, M.; Levinson, Y.; Smet, J.; Nübler, J.; Dolev, M. MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth. International Conference on Molecular Beam Epitaxy (MBE-XV). 2009-03-15, 311 (7): 1658–1661 [2022-06-13]. Bibcode:2009JCrGr.311.1658U. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2008.09.151. （原始内容存档于2022-02-18）（英语）.
Lorke, A; Wimmer, S; Jager, B; Kotthaus, J. P; Wegscheider, W; Bichler, M. Far-infrared and transport properties of antidot arrays with broken symmetry. Physica B: Condensed Matter. 1998-06-17,. 249-251 (1–4): 312–316. Bibcode:1998PhyB..249..312L. ISSN 0921-4526. doi:10.1016/S0921-4526(98)00121-5 （英语）.
Song, A. M.; Manus, S.; Streibl, M.; Lorke, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. A nonlinear transport device with no intrinsic threshold. Superlattices and Microstructures. 1999-01-01, 25 (1): 269–272. Bibcode:1999SuMi...25..269S. ISSN 0749-6036. doi:10.1006/spmi.1998.0646 （英语）.

sciencemag.org

science.sciencemag.org

Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.

semanticscholar.org

api.semanticscholar.org

Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Song, A.M. Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry. Applied Physics A. 2002-08-01, 75 (2): 229–235. Bibcode:2002ApPhA..75..229S. ISSN 1432-0630. S2CID 94413242. doi:10.1007/s003390201334 （英语）.
Zhang, Jiawei; Brownless, Joseph; Song, Aimin. High Performance Graphene Ballistic Rectifiers for THz detection. 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THZ). September 2019: 1–2. ISBN 978-1-5386-8285-2. S2CID 204816235. doi:10.1109/IRMMW-THz.2019.8874198.

web.archive.org

Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Umansky, V.; Heiblum, M.; Levinson, Y.; Smet, J.; Nübler, J.; Dolev, M. MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth. International Conference on Molecular Beam Epitaxy (MBE-XV). 2009-03-15, 311 (7): 1658–1661 [2022-06-13]. Bibcode:2009JCrGr.311.1658U. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2008.09.151. （原始内容存档于2022-02-18）（英语）.
Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Lau, Bryan; Kedem, Ofer; Schwabacher, James; Kwasnieski, Daniel; Weiss, Emily A. An introduction to ratchets in chemistry and biology. Materials Horizons. 2017-05-09, 4 (3): 310–318 [2022-06-14]. ISSN 2051-6355. doi:10.1039/C7MH00062F. （原始内容存档于2022-06-19）（英语）.
Nguyen, Van Huy; Nguyen, Dinh Cong; Kumar, Sunil; Kim, Minwook; Kang, Dongwoon; Lee, Yeonjae; Nasir, Naila; Rehman, Malik Abdul; Bach, Thi Phuong Anh; Jung, Jongwan; Seo, Yongho. Optimum design for the ballistic diode based on graphene field-effect transistors. npj 2D Materials and Applications. 2021-12-02, 5 (1): 1–8 [2022-06-14]. ISSN 2397-7132. doi:10.1038/s41699-021-00269-2. （原始内容存档于2021-12-16）（英语）.

worldcat.org

Gall, Daniel. Electron mean free path in elemental metals. Journal of Applied Physics. 2016-02-23, 119 (8): 085101. Bibcode:2016JAP...119h5101G. ISSN 0021-8979. doi:10.1063/1.4942216.
Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008-06-01, 146 (9): 351–355 [2022-06-13]. Bibcode:2008SSCom.146..351B. ISSN 0038-1098. S2CID 118392999. arXiv:0802.2389 . doi:10.1016/j.ssc.2008.02.024. （原始内容存档于2013-04-05）（英语）.
Umansky, V.; Heiblum, M.; Levinson, Y.; Smet, J.; Nübler, J.; Dolev, M. MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs. Journal of Crystal Growth. International Conference on Molecular Beam Epitaxy (MBE-XV). 2009-03-15, 311 (7): 1658–1661 [2022-06-13]. Bibcode:2009JCrGr.311.1658U. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2008.09.151. （原始内容存档于2022-02-18）（英语）.
Zhu, Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret. Graphene geometric diodes for terahertz rectennas. Journal of Physics D: Applied Physics. 2013-04-15, 46 (18): 185101. Bibcode:2013JPhD...46r5101Z. ISSN 0022-3727. doi:10.1088/0022-3727/46/18/185101.
Custer, James P.; Low, Jeremy D.; Hill, David J.; Teitsworth, Taylor S.; Christesen, Joseph D.; McKinney, Collin J.; McBride, James R.; Brooke, Martin A.; Warren, Scott C.; Cahoon, James F. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature. Science. 2020-04-10, 368 (6487): 177–180 [2022-06-13]. Bibcode:2020Sci...368..177C. ISSN 0036-8075. PMID 32273466. S2CID 215550903. doi:10.1126/science.aay8663. （原始内容存档于2020-08-13）（英语）.
Lau, Bryan; Kedem, Ofer; Schwabacher, James; Kwasnieski, Daniel; Weiss, Emily A. An introduction to ratchets in chemistry and biology. Materials Horizons. 2017-05-09, 4 (3): 310–318 [2022-06-14]. ISSN 2051-6355. doi:10.1039/C7MH00062F. （原始内容存档于2022-06-19）（英语）.
Lau, Bryan; Kedem, Ofer. Electron ratchets: State of the field and future challenges. The Journal of Chemical Physics. 2020-05-22, 152 (20): 200901. Bibcode:2020JChPh.152t0901L. ISSN 0021-9606. PMID 32486653. doi:10.1063/5.0009561 .
Song, A. M.; Lorke, A.; Kriele, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier. Physical Review Letters. 1998-04-27, 80 (17): 3831–3834. Bibcode:1998PhRvL..80.3831S. ISSN 0031-9007. doi:10.1103/physrevlett.80.3831.
Linke, H; Sheng, W; Löfgren, A; Xu, Hongqi; Omling, P; Lindelof, P. E. A quantum dot ratchet: Experiment and theory. Europhysics Letters (EPL). 1998-11-01, 44 (3): 341–347. Bibcode:1998EL.....44..341L. ISSN 0295-5075. doi:10.1209/epl/i1998-00562-1 （英语）.
Song, A.M. Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry. Applied Physics A. 2002-08-01, 75 (2): 229–235. Bibcode:2002ApPhA..75..229S. ISSN 1432-0630. S2CID 94413242. doi:10.1007/s003390201334 （英语）.
Lorke, A; Wimmer, S; Jager, B; Kotthaus, J. P; Wegscheider, W; Bichler, M. Far-infrared and transport properties of antidot arrays with broken symmetry. Physica B: Condensed Matter. 1998-06-17,. 249-251 (1–4): 312–316. Bibcode:1998PhyB..249..312L. ISSN 0921-4526. doi:10.1016/S0921-4526(98)00121-5 （英语）.
Song, A. M.; Manus, S.; Streibl, M.; Lorke, A.; Kotthaus, J. P.; Wegscheider, W.; Bichler, M. A nonlinear transport device with no intrinsic threshold. Superlattices and Microstructures. 1999-01-01, 25 (1): 269–272. Bibcode:1999SuMi...25..269S. ISSN 0749-6036. doi:10.1006/spmi.1998.0646 （英语）.
Song, A. M.; Omling, P.; Samuelson, L.; Seifert, W.; Shorubalko, I.; Zirath, H. Room-temperature and 50 GHz operation of a functional nanomaterial. Applied Physics Letters. 2001-08-22, 79 (9): 1357–1359. Bibcode:2001ApPhL..79.1357S. ISSN 0003-6951. doi:10.1063/1.1398324.
Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin. Graphene ballistic nano-rectifier with very high responsivity. Nature Communications. 2016-05-31, 7 (1): 11670. Bibcode:2016NatCo...711670A. ISSN 2041-1723. PMC 4895026 . PMID 27241162. doi:10.1038/ncomms11670 （英语）.
Nguyen, Van Huy; Nguyen, Dinh Cong; Kumar, Sunil; Kim, Minwook; Kang, Dongwoon; Lee, Yeonjae; Nasir, Naila; Rehman, Malik Abdul; Bach, Thi Phuong Anh; Jung, Jongwan; Seo, Yongho. Optimum design for the ballistic diode based on graphene field-effect transistors. npj 2D Materials and Applications. 2021-12-02, 5 (1): 1–8 [2022-06-14]. ISSN 2397-7132. doi:10.1038/s41699-021-00269-2. （原始内容存档于2021-12-16）（英语）.