晶体管 (Chinese Wikipedia)
Analysis of information sources in references of the Wikipedia article "晶体管" in Chinese language version.
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archive.org
- Horowitz, Paul; Winfield Hill. The Art of Electronics 2nd. Cambridge University Press. 1989: 115. ISBN 0-521-37095-7.
arxiv.org
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811
. doi:10.1088/0957-4484/23/21/215204.
bcae1.com
- Transistor Example. www.bcae1.com. [2021-12-09]. （原始内容存档于2008-02-08）.
books.google.com
- 华伟; 周文定. 现代电力电子器件及其应用. 清华大学出版社有限公司. 2002 [2014-05-19]. ISBN 978-7-81082-032-5. （原始内容存档于2014-07-07）.
- Robert W. Price. Roadmap to Entrepreneurial Success. AMACOM Div American Mgmt Assn. 2004: 42. ISBN 978-0-8144-7190-6.[失效連結]
doi.org
dx.doi.org
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811 . doi:10.1088/0957-4484/23/21/215204.
- Prati, Enrico; Hori, Masahiro; Guagliardo, Filippo; Ferrari, Giorgio; Shinada, Takahiro. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor. Nature Nanotechnology. 2012-07, 7 (7): 443–447 [2021-12-09]. ISSN 1748-3387. doi:10.1038/nnano.2012.94. （原始内容存档于2021-12-09） （英语）.
globalsources.com
- FETs/MOSFETs: Smaller apps push up surface-mount supply 互联网档案馆的存檔，存档日期2008-12-06.
harvard.edu
ui.adsabs.harvard.edu
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811 . doi:10.1088/0957-4484/23/21/215204.
ieee.org
spectrum.ieee.org
- John Keane and Chris H. Kim, "Transistor Aging," （页面存档备份，存于互联网档案馆） IEEE Spectrum (web feature), April 25, 2011.
ieeeghn.org
- Milestones:Invention of the First Transistor at Bell Telephone Laboratories, Inc., 1947. IEEE Global History Network. IEEE. [3 August 2011]. （原始内容存档于2014-11-21）.
iop.org
iopscience.iop.org
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811 . doi:10.1088/0957-4484/23/21/215204.
nature.com
- Prati, Enrico; Hori, Masahiro; Guagliardo, Filippo; Ferrari, Giorgio; Shinada, Takahiro. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor. Nature Nanotechnology. 2012-07, 7 (7): 443–447 [2021-12-09]. ISSN 1748-3387. doi:10.1038/nnano.2012.94. （原始内容存档于2021-12-09） （英语）.
nih.gov
ncbi.nlm.nih.gov
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811 . doi:10.1088/0957-4484/23/21/215204.
nobelprize.org
- The Nobel Prize in Physics 1956. Nobelprize.org. Nobel Media AB. [7 December 2014]. （原始内容存档于2014-12-18）.
techbang.com
- 科學角度看音響5：真空管、電晶體實作差異性，電壓、電流、電阻關係式. [2015-09-19]. （原始内容存档于2015-06-07）.
web.archive.org
- The Nobel Prize in Physics 1956. Nobelprize.org. Nobel Media AB. [7 December 2014]. （原始内容存档于2014-12-18）.
- 华伟; 周文定. 现代电力电子器件及其应用. 清华大学出版社有限公司. 2002 [2014-05-19]. ISBN 978-7-81082-032-5. （原始内容存档于2014-07-07）.
- Milestones:Invention of the First Transistor at Bell Telephone Laboratories, Inc., 1947. IEEE Global History Network. IEEE. [3 August 2011]. （原始内容存档于2014-11-21）.
- FETs/MOSFETs: Smaller apps push up surface-mount supply 互联网档案馆的存檔，存档日期2008-12-06.
- 科學角度看音響5：真空管、電晶體實作差異性，電壓、電流、電阻關係式. [2015-09-19]. （原始内容存档于2015-06-07）.
- John Keane and Chris H. Kim, "Transistor Aging," （页面存档备份，存于互联网档案馆） IEEE Spectrum (web feature), April 25, 2011.
- Transistor Example. www.bcae1.com. [2021-12-09]. （原始内容存档于2008-02-08）.
- Prati, Enrico; Hori, Masahiro; Guagliardo, Filippo; Ferrari, Giorgio; Shinada, Takahiro. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor. Nature Nanotechnology. 2012-07, 7 (7): 443–447 [2021-12-09]. ISSN 1748-3387. doi:10.1038/nnano.2012.94. （原始内容存档于2021-12-09） （英语）.
- Sansen, Willy. Analog design essentials. Dordrecht: Spinger. 2008 [2021-12-09]. ISBN 978-0-387-25746-4. OCLC 890594995. （原始内容存档于2009-04-22） （英语）.
worldcat.org
- Prati, Enrico; De Michielis, Marco; Belli, Matteo; Cocco, Simone; Fanciulli, Marco; Kotekar-Patil, Dharmraj; Ruoff, Matthias; Kern, Dieter P; Wharam, David A. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology. 2012-06-01, 23 (21): 215204. Bibcode:2012Nanot..23u5204P. ISSN 0957-4484. PMID 22552118. arXiv:1203.4811 . doi:10.1088/0957-4484/23/21/215204.
- Prati, Enrico; Hori, Masahiro; Guagliardo, Filippo; Ferrari, Giorgio; Shinada, Takahiro. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor. Nature Nanotechnology. 2012-07, 7 (7): 443–447 [2021-12-09]. ISSN 1748-3387. doi:10.1038/nnano.2012.94. （原始内容存档于2021-12-09） （英语）.
- Sansen, Willy. Analog design essentials. Dordrecht: Spinger. 2008 [2021-12-09]. ISBN 978-0-387-25746-4. OCLC 890594995. （原始内容存档于2009-04-22） （英语）.