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Chen, J. R. Characteristics of fire and explosion in semiconductor fabrication processes. Process Safety Progress. 2002, 21 (1): 19–25. S2CID 110162337. doi:10.1002/prs.680210106.
Chen, J. R.; Tsai, H. Y.; Chen, S. K.; Pan, H. R.; Hu, S. C.; Shen, C. C.; Kuan, C. M.; Lee, Y. C. & Wu, C. C. Analysis of a silane explosion in a photovoltaic fabrication plant. Process Safety Progress. 2006, 25 (3): 237–244. S2CID 111176344. doi:10.1002/prs.10136.
Chang, Y. Y.; Peng, D. J.; Wu, H. C.; Tsaur, C. C.; Shen, C. C.; Tsai, H. Y. & Chen, J. R. Revisiting of a silane explosion in a photovoltaic fabrication plant. Process Safety Progress. 2007, 26 (2): 155–158. S2CID 110741985. doi:10.1002/prs.10194.
Kondo, S.; Tokuhashi, K.; Nagai, H.; Iwasaka, M. & Kaise, M. Spontaneous Ignition Limits of Silane and Phosphine. Combustion and Flame. 1995, 101 (1–2): 170–174. doi:10.1016/0010-2180(94)00175-R.
semanticscholar.org
api.semanticscholar.org
Chen, J. R. Characteristics of fire and explosion in semiconductor fabrication processes. Process Safety Progress. 2002, 21 (1): 19–25. S2CID 110162337. doi:10.1002/prs.680210106.
Chen, J. R.; Tsai, H. Y.; Chen, S. K.; Pan, H. R.; Hu, S. C.; Shen, C. C.; Kuan, C. M.; Lee, Y. C. & Wu, C. C. Analysis of a silane explosion in a photovoltaic fabrication plant. Process Safety Progress. 2006, 25 (3): 237–244. S2CID 111176344. doi:10.1002/prs.10136.
Chang, Y. Y.; Peng, D. J.; Wu, H. C.; Tsaur, C. C.; Shen, C. C.; Tsai, H. Y. & Chen, J. R. Revisiting of a silane explosion in a photovoltaic fabrication plant. Process Safety Progress. 2007, 26 (2): 155–158. S2CID 110741985. doi:10.1002/prs.10194.
