碳化硅 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "碳化硅" in Chinese language version.

refsWebsite

Global rank Chinese rank

19web.archive.org

1^st place

18doi.org

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12harvard.edu

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57^th place

8books.google.com

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8^th place

3springer.com

274^th place

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3iop.org

1,725^th place

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2wiley.com

222^nd place

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1britannica.com

40^th place

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1google.com

163^rd place

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1bnf.fr

124^th place

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1geoscienceworld.org

3,158^th place

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1nature.com

234^th place

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1ucl.ac.uk

1,306^th place

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1nsc.co.jp

low place

1worldscibooks.com

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1acs.org

1,248^th place

434^th place

1aip.org

2,204^th place

1,725^th place

1ieee.org

652^nd place

712^th place

1arxiv.org

69^th place

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1esa.int

1,482^nd place

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1spiedigitallibrary.org

low place

1gatech.edu

4,448^th place

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1nih.gov

4^th place

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1reuters.com

49^th place

81^st place

1cree.com

low place

1fujielectric.com

low place

acs.org

pubs.acs.org

Laine, Richard M.; Babonneau, Florence. Preceramic polymer routes to silicon carbide. Chemistry of Materials. 1993, 5 (3): 260 [2013-02-04]. doi:10.1021/cm00027a007. （原始内容存档于2022-01-13）.

aip.org

jap.aip.org

Morkç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. Journal of Applied Physics. 1994, 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463. ^{[永久失效連結]}

arxiv.org

Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru. Superconductivity in heavily boron-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044205. Bibcode:2008STAdM...9d4205K. arXiv:0810.0056 . doi:10.1088/1468-6996/9/4/044205.

bnf.fr

gallica.bnf.fr

Moissan, Henri. Nouvelles recherches sur la météorité de Cañon Diablo. Comptes rendus. 1904, 139: 773–786 [2013-02-04]. （原始内容存档于2019-12-02）.

books.google.com

Weimer, A. W. Carbide, nitride, and boride materials synthesis and processing. Springer. 1997: 115. ISBN 0-412-54060-6.
Harris, Gary Lynn. Properties of silicon carbide. IET. 1995: 19; 170–180. ISBN 0-85296-870-1.
Byrappa, K.; Ohachi, T. Crystal growth technology. Springer. 2003: 180–200. ISBN 3-540-00367-3.
Park, Yoon-Soo. SiC materials and devices. Academic Press. 1998: 20–60. ISBN 0-12-752160-7.
Cheung, Rebecca. Silicon carbide microelectromechanical systems for harsh environments. Imperial College Press. 2006: 3. ISBN 1-86094-624-0.
Rase, Howard F. Handbook of commercial catalysts: heterogeneous catalysts. CRC Press. 2000: 258. ISBN 0-8493-9417-1.
de Heer; Walt A. 19. Epitaxial graphene. Sattler, Klaus D. (编). Handbook of Nanophysics (free download). Taylor and Francis. 2010. ISBN 1-4200-7538-1.
Meißer, Michael. Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges. KIT Scientific Publishing. 2013: 94 [2020-08-05]. ISBN 978-3-7315-0083-4. （原始内容存档于2021-04-28）.

britannica.com

Encyclopædia Britannica, eb.com （页面存档备份，存于互联网档案馆）

cree.com

Cree launches industry’s first commercial silicon carbide power MOSFET; destined to replace silicon devices in high-voltage (≥ 1200 V) power electronics (新闻稿). Cree. 2011-01-17 [2020-08-05]. （原始内容存档于2016-11-26）.

doi.org

Nikolay Zheludev. The life and times of the LED — a 100-year history. Nature Photonics. 2007, 1 (4): 189–192. Bibcode:2007NaPho...1..189Z. doi:10.1038/nphoton.2007.34.
C. M. O'D. Alexander, P. Swan & R. M. Walker. In situ measurement of interstellar silicon carbide in two CM chondrite meteorites. Nature. 1990, 348 (6303): 715–717 [2013-02-04]. Bibcode:1990Natur.348..715A. doi:10.1038/348715a0. （原始内容存档于2012-11-14）.
A. S. Vlasov, A. I. Zakharov, O. A. Sarkisyan, N. A. Lukasheva. Obtaining silicon carbide from rice husks. Refractories. 1991, 32 (9-10): 521–523 [2013-02-04]. doi:10.1007/BF01287542. （原始内容存档于2016-09-30）.
Yang Zhong, Leon L. Shaw, Misael Manjarres, Mahmoud F. Zawrah. Synthesis of Silicon Carbide Nanopowder Using Silica Fume. Journal of American Ceramic Society. 2010, 93: 3159. doi:10.1111/j.1551-2916.2010.03867.x.
Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne). Advanced Materials. 2004, 16 (8): 706 [2013-02-04]. doi:10.1002/adma.200306467. （原始内容存档于2018-03-11）.
Bunsell, A. R.; Piant, A. A review of the development of three generations of small diameter silicon carbide fibres. Journal of Materials Science. 2006, 41 (3): 823 [2013-02-04]. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. （原始内容存档于2015-06-22）.
Laine, Richard M.; Babonneau, Florence. Preceramic polymer routes to silicon carbide. Chemistry of Materials. 1993, 5 (3): 260 [2013-02-04]. doi:10.1021/cm00027a007. （原始内容存档于2022-01-13）.
Morkç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. Journal of Applied Physics. 1994, 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463. ^{[永久失效連結]}
Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun. Superconductivity in carrier-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204.
Bhatnagar, M.; Baliga, B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Transactions on Electron Devices. March 1993, 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru. Superconductivity in heavily boron-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044205. Bibcode:2008STAdM...9d4205K. arXiv:0810.0056 . doi:10.1088/1468-6996/9/4/044205.
Yanase, Y. and Yorozu, N. Superconductivity in compensated and uncompensated semiconductors (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201.
Petrovsky; G. Tolstoy; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. 2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope. Proc. SPIE. 1994-06, 2199: 263-270 [2013-02-06]. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. （原始内容存档于2014-04-19）.
Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. High surface area silicon carbide from rice husk: A support material for catalysts. Reaction Kinetics and Catalysis Letters. 1995, 54 (1): 29 [2013-02-06]. doi:10.1007/BF02071177. （原始内容存档于2016-03-04）.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard. Epitaxial graphene (PDF). Solid State Communications. 2007, 143 (1–2): 92–100 [2009-07-31]. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. （原始内容 (free download)存档于2008-12-09）.
Chen, H.; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, B.J. Effects of defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. Mater. Res. Soc. Symp. Proc. 2006, 911: 169. doi:10.1557/PROC-0911-B12-03.
Madar, Roland. Materials science: Silicon carbide in contention. Nature. 2004-08-26, 430 (7003): 974–975. Bibcode:2004Natur.430..974M. PMID 15329702. doi:10.1038/430974a.
Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. MOS Characteristics of C-Face 4H-SiC. J. Of Elec. Mat. 2010, 39 (5): 526–529. Bibcode:2010JEMat..39..526C. doi:10.1007/s11664-010-1096-5.

esa.int

The largest telescope mirror ever put into space. European Space Agency. [2009-06-06]. （原始内容存档于2012-10-19）.

fujielectric.com

Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari. Packaging Technologies for SiC Power Modules (PDF). Fuji Electric Review. 2012, 58 (2): 75–78 [2020-08-05]. （原始内容存档 (PDF)于2016-07-01）.

gatech.edu

physics.gatech.edu

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard. Epitaxial graphene (PDF). Solid State Communications. 2007, 143 (1–2): 92–100 [2009-07-31]. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. （原始内容 (free download)存档于2008-12-09）.

geoscienceworld.org

Di Pierro S., Gnos E., Grobety B.H., Armbruster T., Bernasconi S.M., and Ulmer P. Rock-forming moissanite (natural α-silicon carbide). American Mineralogist. 2003, 88: 1817–21 [2013-02-04]. （原始内容存档于2015-09-24）.

google.com

Acheson, G. (1893) 美國專利第492,767号 "Production of artificial crystalline carbonaceous material"

harvard.edu

ui.adsabs.harvard.edu

Nikolay Zheludev. The life and times of the LED — a 100-year history. Nature Photonics. 2007, 1 (4): 189–192. Bibcode:2007NaPho...1..189Z. doi:10.1038/nphoton.2007.34.
C. M. O'D. Alexander, P. Swan & R. M. Walker. In situ measurement of interstellar silicon carbide in two CM chondrite meteorites. Nature. 1990, 348 (6303): 715–717 [2013-02-04]. Bibcode:1990Natur.348..715A. doi:10.1038/348715a0. （原始内容存档于2012-11-14）.
Bunsell, A. R.; Piant, A. A review of the development of three generations of small diameter silicon carbide fibres. Journal of Materials Science. 2006, 41 (3): 823 [2013-02-04]. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. （原始内容存档于2015-06-22）.
Morkç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. Journal of Applied Physics. 1994, 76 (3): 1363. Bibcode:1994JAP....76.1363M. doi:10.1063/1.358463. ^{[永久失效連結]}
Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun. Superconductivity in carrier-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204.
Bhatnagar, M.; Baliga, B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Transactions on Electron Devices. March 1993, 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru. Superconductivity in heavily boron-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044205. Bibcode:2008STAdM...9d4205K. arXiv:0810.0056 . doi:10.1088/1468-6996/9/4/044205.
Yanase, Y. and Yorozu, N. Superconductivity in compensated and uncompensated semiconductors (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201.
Petrovsky; G. Tolstoy; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. 2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope. Proc. SPIE. 1994-06, 2199: 263-270 [2013-02-06]. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. （原始内容存档于2014-04-19）.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard. Epitaxial graphene (PDF). Solid State Communications. 2007, 143 (1–2): 92–100 [2009-07-31]. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. （原始内容 (free download)存档于2008-12-09）.
Madar, Roland. Materials science: Silicon carbide in contention. Nature. 2004-08-26, 430 (7003): 974–975. Bibcode:2004Natur.430..974M. PMID 15329702. doi:10.1038/430974a.
Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. MOS Characteristics of C-Face 4H-SiC. J. Of Elec. Mat. 2010, 39 (5): 526–529. Bibcode:2010JEMat..39..526C. doi:10.1007/s11664-010-1096-5.

ieee.org

ieeexplore.ieee.org

Bhatnagar, M.; Baliga, B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Transactions on Electron Devices. March 1993, 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.

iop.org

Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun. Superconductivity in carrier-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044204. Bibcode:2008STAdM...9d4204M. doi:10.1088/1468-6996/9/4/044204.
Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru. Superconductivity in heavily boron-doped silicon carbide (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044205. Bibcode:2008STAdM...9d4205K. arXiv:0810.0056 . doi:10.1088/1468-6996/9/4/044205.
Yanase, Y. and Yorozu, N. Superconductivity in compensated and uncompensated semiconductors (free download). Sci. Technol. Adv. Mater. 2008, 9 (4): 044201. Bibcode:2008STAdM...9d4201Y. doi:10.1088/1468-6996/9/4/044201.

nature.com

C. M. O'D. Alexander, P. Swan & R. M. Walker. In situ measurement of interstellar silicon carbide in two CM chondrite meteorites. Nature. 1990, 348 (6303): 715–717 [2013-02-04]. Bibcode:1990Natur.348..715A. doi:10.1038/348715a0. （原始内容存档于2012-11-14）.

nih.gov

ncbi.nlm.nih.gov

Madar, Roland. Materials science: Silicon carbide in contention. Nature. 2004-08-26, 430 (7003): 974–975. Bibcode:2004Natur.430..974M. PMID 15329702. doi:10.1038/430974a.

nsc.co.jp

N.Ohtani, T.Fujimoto, T.Aigo, M.Katsuno, H.Tsuge, H.Yashiro. Nippon Steel Technical Report no. 84 : Large high-quality silicon carbide substrates (PDF). 2001. （原始内容 (PDF)存档于2012-03-04）.

reuters.com

At 1200 V and 45 milliohms, SemiSouth introduces the industry’s lowest resistance SiC power transistor for efficient power management (新闻稿). Reuters. 2011-05-05. （原始内容存档于2016-03-15）.

spiedigitallibrary.org

proceedings.spiedigitallibrary.org

Petrovsky; G. Tolstoy; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. 2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope. Proc. SPIE. 1994-06, 2199: 263-270 [2013-02-06]. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. （原始内容存档于2014-04-19）.

springer.com

link.springer.com

A. S. Vlasov, A. I. Zakharov, O. A. Sarkisyan, N. A. Lukasheva. Obtaining silicon carbide from rice husks. Refractories. 1991, 32 (9-10): 521–523 [2013-02-04]. doi:10.1007/BF01287542. （原始内容存档于2016-09-30）.
Bunsell, A. R.; Piant, A. A review of the development of three generations of small diameter silicon carbide fibres. Journal of Materials Science. 2006, 41 (3): 823 [2013-02-04]. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. （原始内容存档于2015-06-22）.
Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. High surface area silicon carbide from rice husk: A support material for catalysts. Reaction Kinetics and Catalysis Letters. 1995, 54 (1): 29 [2013-02-06]. doi:10.1007/BF02071177. （原始内容存档于2016-03-04）.

ucl.ac.uk

img.chem.ucl.ac.uk

The Astrophysical Nature of Silicon Carbide, [2009-06-06], （原始内容存档于2017-05-04）

web.archive.org

Encyclopædia Britannica, eb.com （页面存档备份，存于互联网档案馆）
Moissan, Henri. Nouvelles recherches sur la météorité de Cañon Diablo. Comptes rendus. 1904, 139: 773–786 [2013-02-04]. （原始内容存档于2019-12-02）.
Di Pierro S., Gnos E., Grobety B.H., Armbruster T., Bernasconi S.M., and Ulmer P. Rock-forming moissanite (natural α-silicon carbide). American Mineralogist. 2003, 88: 1817–21 [2013-02-04]. （原始内容存档于2015-09-24）.
C. M. O'D. Alexander, P. Swan & R. M. Walker. In situ measurement of interstellar silicon carbide in two CM chondrite meteorites. Nature. 1990, 348 (6303): 715–717 [2013-02-04]. Bibcode:1990Natur.348..715A. doi:10.1038/348715a0. （原始内容存档于2012-11-14）.
The Astrophysical Nature of Silicon Carbide, [2009-06-06], （原始内容存档于2017-05-04）
A. S. Vlasov, A. I. Zakharov, O. A. Sarkisyan, N. A. Lukasheva. Obtaining silicon carbide from rice husks. Refractories. 1991, 32 (9-10): 521–523 [2013-02-04]. doi:10.1007/BF01287542. （原始内容存档于2016-09-30）.
N.Ohtani, T.Fujimoto, T.Aigo, M.Katsuno, H.Tsuge, H.Yashiro. Nippon Steel Technical Report no. 84 : Large high-quality silicon carbide substrates (PDF). 2001. （原始内容 (PDF)存档于2012-03-04）.
Bakin, Andrey S. SiC materials and devices, vol. 1, edited by M. Shur, S. Rumyantsev, M. Levinshtein - Chap.:"SiC Homoepitaxy and Heteroepitaxy". World Scientific. 2006: 43–76 [2013-02-04]. ISBN 981-256-835-2. （原始内容存档于2010-10-22）.
Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne). Advanced Materials. 2004, 16 (8): 706 [2013-02-04]. doi:10.1002/adma.200306467. （原始内容存档于2018-03-11）.
Bunsell, A. R.; Piant, A. A review of the development of three generations of small diameter silicon carbide fibres. Journal of Materials Science. 2006, 41 (3): 823 [2013-02-04]. Bibcode:2006JMatS..41..823B. doi:10.1007/s10853-006-6566-z. （原始内容存档于2015-06-22）.
Laine, Richard M.; Babonneau, Florence. Preceramic polymer routes to silicon carbide. Chemistry of Materials. 1993, 5 (3): 260 [2013-02-04]. doi:10.1021/cm00027a007. （原始内容存档于2022-01-13）.
The largest telescope mirror ever put into space. European Space Agency. [2009-06-06]. （原始内容存档于2012-10-19）.
Petrovsky; G. Tolstoy; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. 2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope. Proc. SPIE. 1994-06, 2199: 263-270 [2013-02-06]. Bibcode:1994SPIE.2199..263P. doi:10.1117/12.176195. （原始内容存档于2014-04-19）.
Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. High surface area silicon carbide from rice husk: A support material for catalysts. Reaction Kinetics and Catalysis Letters. 1995, 54 (1): 29 [2013-02-06]. doi:10.1007/BF02071177. （原始内容存档于2016-03-04）.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard. Epitaxial graphene (PDF). Solid State Communications. 2007, 143 (1–2): 92–100 [2009-07-31]. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. （原始内容 (free download)存档于2008-12-09）.
At 1200 V and 45 milliohms, SemiSouth introduces the industry’s lowest resistance SiC power transistor for efficient power management (新闻稿). Reuters. 2011-05-05. （原始内容存档于2016-03-15）.
Cree launches industry’s first commercial silicon carbide power MOSFET; destined to replace silicon devices in high-voltage (≥ 1200 V) power electronics (新闻稿). Cree. 2011-01-17 [2020-08-05]. （原始内容存档于2016-11-26）.
Meißer, Michael. Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges. KIT Scientific Publishing. 2013: 94 [2020-08-05]. ISBN 978-3-7315-0083-4. （原始内容存档于2021-04-28）.
Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari. Packaging Technologies for SiC Power Modules (PDF). Fuji Electric Review. 2012, 58 (2): 75–78 [2020-08-05]. （原始内容存档 (PDF)于2016-07-01）.

wiley.com

onlinelibrary.wiley.com

Yang Zhong, Leon L. Shaw, Misael Manjarres, Mahmoud F. Zawrah. Synthesis of Silicon Carbide Nanopowder Using Silica Fume. Journal of American Ceramic Society. 2010, 93: 3159. doi:10.1111/j.1551-2916.2010.03867.x.
Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne). Advanced Materials. 2004, 16 (8): 706 [2013-02-04]. doi:10.1002/adma.200306467. （原始内容存档于2018-03-11）.

worldscibooks.com

Bakin, Andrey S. SiC materials and devices, vol. 1, edited by M. Shur, S. Rumyantsev, M. Levinshtein - Chap.:"SiC Homoepitaxy and Heteroepitaxy". World Scientific. 2006: 43–76 [2013-02-04]. ISBN 981-256-835-2. （原始内容存档于2010-10-22）.