纳电子学 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "纳电子学" in Chinese language version.

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arxiv.org

Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico. Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms. Advanced Functional Materials. February 2021, 31 (21): 2011175 [2022-07-10]. arXiv:2102.01390v2 . doi:10.1002/adfm.202011175. （原始内容存档于2022-07-10）.
Tang, Shuang; Dresselhaus, Mildred. New Method to Detect the Transport Scattering Mechanisms of Graphene Carriers. 2014. arXiv:1410.4907 .

Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico. Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms. Advanced Functional Materials. February 2021, 31 (21): 2011175 [2022-07-10]. arXiv:2102.01390v2 . doi:10.1002/adfm.202011175. （原始内容存档于2022-07-10）.
Rode, Daniel. Electron mobility in direct-gap polar semiconductors. Physical Review B. 1970, 2: 1012. doi:10.1103/PhysRevB.2.1012.
Rode, Daniel. Low-field electron transport. Semiconductors and Semimetals. 1975, 10: 1–89. doi:10.1016/S0080-8784(08)60331-2.
Tang, Shuang. Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering. Scientific Reports. 2018, 8: 10597. doi:10.1038/s41598-018-28288-y.
Xu, Dongchao. Detecting the major charge-carrier scattering mechanism in graphene antidot lattices. Carbon. 2019, 144: 601–607. doi:10.1016/j.carbon.2018.12.080.
Tang, Shuang. Inferring the energy sensitivity and band gap of electronic transport in a network of carbon nanotubes. Scientific Reports. 2022, 12: 2060. doi:10.1038/s41598-022-06078-x.

Hao, Qing. Transport Property Studies of Structurally Modified Graphene (报告). Arlington, VA: Defense Technical Information Center. 2019 [2023-07-25]. （原始内容存档于2023-06-30）.

Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico. Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms. Advanced Functional Materials. February 2021, 31 (21): 2011175 [2022-07-10]. arXiv:2102.01390v2 . doi:10.1002/adfm.202011175. （原始内容存档于2022-07-10）.
Hao, Qing. Transport Property Studies of Structurally Modified Graphene (报告). Arlington, VA: Defense Technical Information Center. 2019 [2023-07-25]. （原始内容存档于2023-06-30）.

Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico. Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms. Advanced Functional Materials. February 2021, 31 (21): 2011175 [2022-07-10]. arXiv:2102.01390v2 . doi:10.1002/adfm.202011175. （原始内容存档于2022-07-10）.