闪存 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "闪存" in Chinese language version.

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33web.archive.org

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3ieee.org

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3dramexchange.com

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2termonline.cn

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2micron.com

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2onfi.org

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2tgdaily.com

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2sandisk.com

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1naer.edu.tw

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1zgbk.com

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1stackexchange.com

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1engadget.com

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1mydrivers.com

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1nikkeibp.co.jp

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1tgc.com

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1nxp.com

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1microsoft.com

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1doi.org

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1wdc.com

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1dailycircuitry.com

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1xbitlabs.com

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1pcworld.com

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1techcrunch.com

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1dailytech.com

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1wikipedia.org

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1elitepcbuilding.com

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1storagesearch.com

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1mysqlperformanceblog.com

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1slideshare.net

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1samsung.com

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1tomshardware.com

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1usitc.gov

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1geek.com

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1eetimes.com

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1anandtech.com

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anandtech.com

Lal Shimpi, Anand. Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates. Anandtech. 2 December 2010 [2 December 2010]. （原始内容存档于2010-12-03）.

dailycircuitry.com

Flash vs DRAM follow-up: chip stacking. The Daily Circuit. 22 April 2012 [22 April 2012]. （原始内容存档于2012-11-24）.

dailytech.com

Samsung Confirms 32nm Flash Problems, Working on New SSD Controller 互联网档案馆的存檔，存档日期2016-03-04.

doi.org

dx.doi.org

Pavan, Paolo; Bez, Roberto; Olivo, Piero; Zononi, Enrico. Flash Memory Cells – An Overview (PDF). Proceedings of the IEEE 85 (8). 1997: 1248–12711997-08 [15 August 2008]. doi:10.1109/5.622505.

dramexchange.com

press.dramexchange.com

DRAMeXchange reports 4Q08 and 2008 Sales Ranking of NAND Flash Brand Companies. DRAMeXchange. 2009-02-06 [2013-08-03]. （原始内容存档于2009-07-22）（英语）.
集邦：NAND Flash品牌廠商公佈去年第四季暨全年營收排名. DRAMeXchange. 2009-02-05 [2013-08-03]. （原始内容存档于2009-07-30）（中文（臺灣））.
2012年第四季NAND Flash品牌供货商营收季成长14.6%，全年衰退6.6%. DRAMeXchange. 2013-04-02 [2013-08-03] （中文（中国大陆））. ^{[永久失效連結]}

eetimes.com

Clarke, Peter (20 November 2012). "Samsung takes NAND memory below 20-nm" （页面存档备份，存于互联网档案馆） eetimes.com. Retrieved 21 December 2012.

elitepcbuilding.com

Lyth0s. SSD vs. HDD. elitepcbuilding.com. 17 March 2011 [11 July 2011]. （原始内容存档于2011-08-20）.

engadget.com

Samsung ships first 3D vertical NAND flash, defies memory scaling limits. [2013-08-14]. （原始内容存档于2019-11-28）.

geek.com

Humphries, Matthew (15 November 2012)."Samsung starts producing 10nm NAND memory chips" （页面存档备份，存于互联网档案馆） Geek.com.Retrieved 18 November 2012.

ieee.org

ieeexplore.ieee.org

Kim, Jesung; Kim, John Min; Noh, Sam H.; Min, Sang Lyul; Cho, Yookun. A Space-Efficient Flash Translation Layer for CompactFlash Systems (PDF). Proceedings of the IEEE 48 (2). 2002-05: 366–375 [15 August 2008].
Pavan, Paolo; Bez, Roberto; Olivo, Piero; Zononi, Enrico. Flash Memory Cells – An Overview (PDF). Proceedings of the IEEE 85 (8). 1997: 1248–12711997-08 [15 August 2008]. doi:10.1109/5.622505.
Kim, Kinam; Koh, Gwan-Hyeob. Future Memory Technology including Emerging New Memories (PDF). Serbia and Montenegro: Proceedings of the 24th International Conference on Microelectronics. 16 May 2004: 377–384 (2004-05) [15 August 2008].

it168.com

storage.it168.com

形态与性能双优 Memblaze PBlaze5 PCIe NVMe SSD聚焦闪存新革命-IT168 存储专区. storage.it168.com. [2018-03-13]. （原始内容存档于2020-12-14）.

micron.com

download.micron.com

TN-29-17 NAND Flash Design and Use Considerations Introduction (PDF). Micron. April 2010 [29 July 2011]. （原始内容 (PDF)存档于2011-07-19）.
TN-29-07: Small-Block vs. Large-Block NAND flash Devices 互联网档案馆的存檔，存档日期2013-06-08. Explains 512+16 and 2048+64-byte blocks

microsoft.com

Dell, Intel And Microsoft Join Forces To Increase Adoption Of NAND-Based Flash Memory In PC Platforms. REDMOND, Wash: Microsoft. 2007-05-30 [2013-08-03]. （原始内容存档于2014-08-12）（英语）.

mydrivers.com

news.mydrivers.com

三星大规模生产128Gb MLC闪存芯片. MyDrivers. [2013-10-17]. （原始内容存档于2013-10-17）.

mysqlperformanceblog.com

"Intel SSD 910 vs HDD RAID in tpcc-mysql benchmark.". [2013-08-02]. （原始内容存档于2014-07-05）.

naer.edu.tw

terms.naer.edu.tw

flash memory. 樂詞網. 國家教育研究院. （繁體中文）

nikkeibp.co.jp

techon.nikkeibp.co.jp

Kawamatus, Tatsuya. TECHNOLOGY FOR MANAGING NAND FLASH (PDF). Hagiwara sys-com co., LTD. [1 August 2011]. ^{[失效連結]}

nxp.com

AN10860 LPC313x NAND flash data and bad block management （页面存档备份，存于互联网档案馆） Explains 4096+128-byte blocks.

onfi.org

Open NAND Flash Interface Specification (PDF). Open NAND Flash Interface. 28 December 2006 [31 July 2010]. （原始内容 (PDF)存档于2011-07-27）.
A list of ONFi members is available at The ONFI Workgroup Membership （页面存档备份，存于互联网档案馆）.

pcworld.com

Bruce Gain. Look Out for the 256GB Thumb Drive and the 128GB Tablet. PCWorld. 2011-04-16 [2013-08-03]. （原始内容存档于2012-01-21）（英语）.

samsung.com

Samsung Electronics Launches the World’s First PCs with NAND Flash-based Solid State Disk. Press Release. Samsung. 24 May 2006 [30 November 2008]. （原始内容存档于2008-12-20）.

sandisk.com

12 GB MicroSDHC. [2013-07-05]. （原始内容存档于2008-12-19）.
32 GB SDHC Plus. [2013-07-05]. （原始内容存档于2008-12-19）.

slideshare.net

Matsunobu, Yoshinori. "SSD Deployment Strategies for MySQL." （页面存档备份，存于互联网档案馆） Sun Microsystems, 15 April 2010.

stackexchange.com

electronics.stackexchange.com

存档副本. [2017-10-26]. （原始内容存档于2021-05-07）.

storagesearch.com

Flash Solid State Disks – Inferior Technology or Closet Superstar?. STORAGEsearch. [30 November 2008]. （原始内容存档于2008-12-24）.

techcrunch.com

Matt Burns. Kingston outs the first 256GB flash drive. TechCrunch. 2009-07-20 [2013-08-13]. （原始内容存档于2021-04-15）（英语）.

termonline.cn

闪存. 术语在线. 全国科学技术名词审定委员会. （简体中文）
闪速存储器. 术语在线. 全国科学技术名词审定委员会. （简体中文）

tgc.com

TOSHIBA ANNOUNCES 0.13 MICRON 1GB MONOLITHIC NAND. [2013-08-03]. （原始内容存档于2012-12-27）（英语）. Toshiba invented NAND flash technology in 1989

tgdaily.com

Gruener, Wolfgang. Samsung announces 40 nm Flash, predicts 20 nm devices. TG Daily. 11 September 2006 [30 November 2008]. （原始内容存档于2008年3月23日）.
NAND memory market rockets （页面存档备份，存于互联网档案馆）, April 17, 2013, Nermin Hajdarbegovic, TG Daily, retrieved at 18 april 2013

tomshardware.com

Douglas Perry (2012) （页面存档备份，存于互联网档案馆） Princeton: Replacing RAM with Flash Can Save Massive Power.

usitc.gov

Yinug, Christopher Falan. The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns (PDF). Journal of International Commerce and Economics. July 2007 [19 April 2008]. （原始内容 (PDF)存档于2008-05-29）.

wdc.com

NAND Evolution and its Effects on Solid State Drive Useable Life (PDF). Western Digital. 2009 [22 April 2012]. （原始内容 (PDF)存档于2011-11-12）.

web.archive.org

存档副本. [2017-10-26]. （原始内容存档于2021-05-07）.
Samsung ships first 3D vertical NAND flash, defies memory scaling limits. [2013-08-14]. （原始内容存档于2019-11-28）.
三星大规模生产128Gb MLC闪存芯片. MyDrivers. [2013-10-17]. （原始内容存档于2013-10-17）.
TN-29-17 NAND Flash Design and Use Considerations Introduction (PDF). Micron. April 2010 [29 July 2011]. （原始内容 (PDF)存档于2011-07-19）.
TOSHIBA ANNOUNCES 0.13 MICRON 1GB MONOLITHIC NAND. [2013-08-03]. （原始内容存档于2012-12-27）（英语）. Toshiba invented NAND flash technology in 1989
TN-29-07: Small-Block vs. Large-Block NAND flash Devices 互联网档案馆的存檔，存档日期2013-06-08. Explains 512+16 and 2048+64-byte blocks
AN10860 LPC313x NAND flash data and bad block management （页面存档备份，存于互联网档案馆） Explains 4096+128-byte blocks.
Open NAND Flash Interface Specification (PDF). Open NAND Flash Interface. 28 December 2006 [31 July 2010]. （原始内容 (PDF)存档于2011-07-27）.
A list of ONFi members is available at The ONFI Workgroup Membership （页面存档备份，存于互联网档案馆）.
Dell, Intel And Microsoft Join Forces To Increase Adoption Of NAND-Based Flash Memory In PC Platforms. REDMOND, Wash: Microsoft. 2007-05-30 [2013-08-03]. （原始内容存档于2014-08-12）（英语）.
NAND Evolution and its Effects on Solid State Drive Useable Life (PDF). Western Digital. 2009 [22 April 2012]. （原始内容 (PDF)存档于2011-11-12）.
Flash vs DRAM follow-up: chip stacking. The Daily Circuit. 22 April 2012 [22 April 2012]. （原始内容存档于2012-11-24）.
Shilov, Anton. Samsung Unveils 2GB Flash Memory Chip. X-bit labs. 12 September 2005 [30 November 2008]. （原始内容存档于2008-12-24）.
Gruener, Wolfgang. Samsung announces 40 nm Flash, predicts 20 nm devices. TG Daily. 11 September 2006 [30 November 2008]. （原始内容存档于2008年3月23日）.
12 GB MicroSDHC. [2013-07-05]. （原始内容存档于2008-12-19）.
32 GB SDHC Plus. [2013-07-05]. （原始内容存档于2008-12-19）.
Bruce Gain. Look Out for the 256GB Thumb Drive and the 128GB Tablet. PCWorld. 2011-04-16 [2013-08-03]. （原始内容存档于2012-01-21）（英语）.
Matt Burns. Kingston outs the first 256GB flash drive. TechCrunch. 2009-07-20 [2013-08-13]. （原始内容存档于2021-04-15）（英语）.
Samsung Confirms 32nm Flash Problems, Working on New SSD Controller 互联网档案馆的存檔，存档日期2016-03-04.
Lyth0s. SSD vs. HDD. elitepcbuilding.com. 17 March 2011 [11 July 2011]. （原始内容存档于2011-08-20）.
Flash Solid State Disks – Inferior Technology or Closet Superstar?. STORAGEsearch. [30 November 2008]. （原始内容存档于2008-12-24）.
"Intel SSD 910 vs HDD RAID in tpcc-mysql benchmark.". [2013-08-02]. （原始内容存档于2014-07-05）.
Matsunobu, Yoshinori. "SSD Deployment Strategies for MySQL." （页面存档备份，存于互联网档案馆） Sun Microsystems, 15 April 2010.
Samsung Electronics Launches the World’s First PCs with NAND Flash-based Solid State Disk. Press Release. Samsung. 24 May 2006 [30 November 2008]. （原始内容存档于2008-12-20）.
Douglas Perry (2012) （页面存档备份，存于互联网档案馆） Princeton: Replacing RAM with Flash Can Save Massive Power.
Yinug, Christopher Falan. The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns (PDF). Journal of International Commerce and Economics. July 2007 [19 April 2008]. （原始内容 (PDF)存档于2008-05-29）.
DRAMeXchange reports 4Q08 and 2008 Sales Ranking of NAND Flash Brand Companies. DRAMeXchange. 2009-02-06 [2013-08-03]. （原始内容存档于2009-07-22）（英语）.
集邦：NAND Flash品牌廠商公佈去年第四季暨全年營收排名. DRAMeXchange. 2009-02-05 [2013-08-03]. （原始内容存档于2009-07-30）（中文（臺灣））.
NAND memory market rockets （页面存档备份，存于互联网档案馆）, April 17, 2013, Nermin Hajdarbegovic, TG Daily, retrieved at 18 april 2013
Humphries, Matthew (15 November 2012)."Samsung starts producing 10nm NAND memory chips" （页面存档备份，存于互联网档案馆） Geek.com.Retrieved 18 November 2012.
Clarke, Peter (20 November 2012). "Samsung takes NAND memory below 20-nm" （页面存档备份，存于互联网档案馆） eetimes.com. Retrieved 21 December 2012.
Lal Shimpi, Anand. Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates. Anandtech. 2 December 2010 [2 December 2010]. （原始内容存档于2010-12-03）.
形态与性能双优 Memblaze PBlaze5 PCIe NVMe SSD聚焦闪存新革命-IT168 存储专区. storage.it168.com. [2018-03-13]. （原始内容存档于2020-12-14）.

wikipedia.org

en.wikipedia.org

Many serial flash devices implement a bulk read mode and incorporate an internal address counter, so that it is trivial to configure them to transfer their entire contents to RAM on power-up. When clocked at 50 MHz, for example, a serial flash could transfer a 64 Mbit（英语：Mbit） firmware image in less than two seconds.

xbitlabs.com

Shilov, Anton. Samsung Unveils 2GB Flash Memory Chip. X-bit labs. 12 September 2005 [30 November 2008]. （原始内容存档于2008-12-24）.

zgbk.com

顾馨蕊，谢雨来．快闪存储器 [DB/OL]．冯丹，陈云霁，陈文光,等编 (2022-01-20) [2024] // 陈奎元．中国大百科全书. 3版网络版．北京：中国大百科全书出版社.