Óxido de hafnio (IV) (Spanish Wikipedia)

Analysis of information sources in references of the Wikipedia article "Óxido de hafnio (IV)" in Spanish language version.

refsWebsite

Global rank Spanish rank

9doi.org

2^nd place

7harvard.edu

18^th place

34^th place

1nist.gov

355^th place

83^rd place

1arxiv.org

69^th place

148^th place

1intel.com

1,118^th place

1,825^th place

1imec-int.com

low place

1ferroelectric-memory.com

low place

1omega.co.uk

low place

1technologyreview.com

1,943^rd place

2,010^th place

arxiv.org

T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). «Pathways towards ferroelectricity in hafnia». Physical Review B 90 (6): 064111. Bibcode:2014PhRvB..90f4111H. arXiv:1407.1008. doi:10.1103/PhysRevB.90.064111.

doi.org

dx.doi.org

Bersch, Eric (2008). «Band offsets of ultrathin high-k oxide films with Si». Phys. Rev. B 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
Table III, V. Miikkulainen (2013). «Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends». Journal of Applied Physics 113 (2): 021301-021301-101. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). «Pathways towards ferroelectricity in hafnia». Physical Review B 90 (6): 064111. Bibcode:2014PhRvB..90f4111H. arXiv:1407.1008. doi:10.1103/PhysRevB.90.064111.
T. S. Boscke (2011). «Ferroelectricity in hafnium oxide thin films». Applied Physics Letters 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
J.H. Choi (2011). «Development of hafnium based high-k materials—A review». Materials Science and Engineering: R 72 (6): 97-136. doi:10.1016/j.mser.2010.12.001.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). «Recent progress in ab initio simulations of hafnia-based gate stacks». Journal of Materials Science 47 (21): 7399-7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y.
Wilk G. D., Wallace R. M., Anthony J. M. (2001). «High-κ gate dielectrics: Current status and materials properties considerations». Journal of Applied Physics 89 (10): 5243-5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065. , Table 1
K.-L. Lin (2011). «Electrode dependence of filament formation in HfO2 resistive-switching memory». Journal of Applied Physics 109 (8): 084104-084104-7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.
T. S. Böscke, J. Müller, D. Bräuhaus (7 Dec 2011). «Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors». 2011 International Electron Devices Meeting (IEEE): 24.5.1-24.5.4. ISBN 978-1-4577-0505-2. doi:10.1109/IEDM.2011.6131606.

ferroelectric-memory.com

The Ferroelectric Memory Company (8 de junio de 2017). «World's first FeFET-based 3D NAND demonstration».

harvard.edu

adsabs.harvard.edu

Bersch, Eric (2008). «Band offsets of ultrathin high-k oxide films with Si». Phys. Rev. B 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
Table III, V. Miikkulainen (2013). «Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends». Journal of Applied Physics 113 (2): 021301-021301-101. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). «Pathways towards ferroelectricity in hafnia». Physical Review B 90 (6): 064111. Bibcode:2014PhRvB..90f4111H. arXiv:1407.1008. doi:10.1103/PhysRevB.90.064111.
T. S. Boscke (2011). «Ferroelectricity in hafnium oxide thin films». Applied Physics Letters 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). «Recent progress in ab initio simulations of hafnia-based gate stacks». Journal of Materials Science 47 (21): 7399-7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y.
Wilk G. D., Wallace R. M., Anthony J. M. (2001). «High-κ gate dielectrics: Current status and materials properties considerations». Journal of Applied Physics 89 (10): 5243-5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065. , Table 1
K.-L. Lin (2011). «Electrode dependence of filament formation in HfO2 resistive-switching memory». Journal of Applied Physics 109 (8): 084104-084104-7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.

imec-int.com

Imec (7 de junio de 2017). «Imec demonstrates breakthrough in CMOS-compatible Ferroelectric Memory».

intel.com

Intel (11 de noviembre de 2007). «Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance».

nist.gov

webbook.nist.gov

Número CAS

omega.co.uk

Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., retrieved 2008-12-03

technologyreview.com

«Aaswath Raman | Innovators Under 35 | MIT Technology Review». August 2015. Consultado el 2 de septiembre de 2015.