Analysis of information sources in references of the Wikipedia article "محمد محمد عطااللہ" in Urdu language version.
Hoerni also attended a meeting of the Electrochemical Society in 1958, where Mohamed “John” Atalla presented a paper about passivation of PN junctions by oxide. [...] Mohamed M. Atalla, alias Martin or John Atalla, graduated from Cairo University in Egypt and for his master and doctorate degrees he attended Purdue University.
Three scientists were named recipients of the Franklin lnstitute's Stuart Ballantine Medal in 1975 [...] Martin M. Atalla, president of Atalla Technovations in California, and Dawon Kahng of Bell Laboratories were chosen "for their contributions to semiconductor silicon-silicon dioxide technology, and for the development of the MOS insulated gate, field-effect transistor.
The Si MOSFET has revolutionized the electronics industry and as a result impacts our daily lives in almost every conceivable way.
The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very large-scale integration of digital integrated circuits (VLSI). During the 1970s these components revolutionized electronic signal processing, control systems and computers.
The relative simplicity and low power requirements of MOSFETs have fostered today's microcomputer revolution.
These active electronic components, or power semiconductor products, from Siliconix are used to switch and convert power in a wide range of systems, from portable information appliances to the communications infrastructure that enable the Internet. The company's power MOSFETs — tiny solid-state switches, or metal oxide semiconductor field-effect transistors — and power integrated circuits are widely used in cell phones and notebook computers to manage battery power efficiently
Those of us active in silicon material and device research during 1956–1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase.
Those of us active in silicon material and device research during 1956–1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase.
In the field of electronics, the planar Si metal–oxide–semiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
Those of us active in silicon material and device research during 1956–1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase.
In the field of electronics, the planar Si metal–oxide–semiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
